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1.School of Physics and Astronomy, Cardiff University, The Parade, Cardiff CF24 3AA, UK
2.International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
3.School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055, China
4.Department of Instruments Science and Technology, School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
5.Key Lab for Special Functional Materials of Ministry of Education, National and Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technology, School of Nanoscience and Materials Engineering, Collaborative Innovation Center of Nano Functional Materials and Applications, Henan University, Kaifeng 475004, China
6.School of Engineering, Cardiff University, The Parade, Cardiff CF24 3AA, UK
Meng Li (mengli@henu.edu.cn)
Hang Zhou (zhouh81@pkusz.edu.cn)
Bo Hou (houb6@cardiff.ac.uk)
Received:17 July 2024,
Revised:26 March 2025,
Accepted:31 March 2025,
Published Online:19 May 2025,
Published:31 August 2025
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Zhan, S. J. et al. High responsivity colloidal quantum dots phototransistors for low-dose near-infrared photodetection and image communication. Light: Science & Applications, 14, 2129-2138 (2025).
Zhan, S. J. et al. High responsivity colloidal quantum dots phototransistors for low-dose near-infrared photodetection and image communication. Light: Science & Applications, 14, 2129-2138 (2025). DOI: 10.1038/s41377-025-01853-7.
The surging demand and adoption of infrared photodetectors (IRPDs) in sectors of imaging
mobile
healthcare
automobiles
and optical communication are hindered by the prohibitive costs of traditional IRPD materials such as InGaAs and HgCdTe. Quantum dots (QDs)
especially lead chalcogenide (PbS) QDs
represent the next-generation low-bandgap semiconductors for near-infrared (NIR) detection due to their high optical absorption coefficient
tunable bandgap
low fabrication costs
and device compatibility. Innovative techniques such as ligand exchange processes have been proposed to boost the performance of PbS QDs photodetectors
mostly using short ligands like 1
2-ethanedithiol (EDT) and tetrabutylammonium iodide (TBAI). Our study explores the use of long-chain dithiol ligands to enhance the responsivity of PbS QDs/InGaZnO phototransistors. Long-chain dithiol ligands are found to suppress horizontal electron transport/leakage and electron trapping
which is beneficial for responsivity. Utilizing a novel ligand-exchange technique with 1
10-decanedithiol (DDT)
we develop high-perfor
mance hybrid phototransistors with detectivity exceeding 10
14
Jones. Based on these phototransistors
we demonstrate image communication through a NIR optical communication system. The long-ligand PbS QDs/InGaZnO hybrid phototransistor demonstrates significant potential for NIR low-dose imaging and optical communication
particularly in scenarios requiring the detection of weak light signals at low frequencies.
Rogalski, A., Antoszewski, J. & Faraone, L. Third-generation infrared photodetector arrays. J. Appl. Phys. 105 , 091101 (2009)..
Choi, H. T. et al. Zero-dimensional PbS quantum dot–InGaZnO film heterostructure for short-wave infrared flat-panel imager. ACS Photonics 7 , 1932–1941 (2020)..
Li, L. L. et al. Near‐infrared light triggered self‐powered mechano‐optical communication system using wearable photodetector textile. Adv. Funct. Mater. 31 , 2104782 (2021)..
Cai, S. et al. Materials and designs for wearable photodetectors. Adv. Mater. 31 , 1808138 (2019)..
Kwon, S. M. et al. Large-area pixelized optoelectronic neuromorphic devices with multispectral light-modulated bidirectional synaptic circuits. Adv. Mater. 33 , 2105017 (2021)..
Tang, X. et al. Dual-band infrared imaging using stacked colloidal quantum dot photodiodes. Nat. Photonics 13 , 277–282 (2019)..
Zha, J. J. et al. Infrared photodetectors based on 2D materials and nanophotonics. Adv. Funct. Mater. 32 , 2111970 (2022)..
Stiff-Roberts, A. D. Quantum-dot infrared photodetectors: a review. J. Nanophotonics 3 , 031607 (2009)..
Arquer, F. P. G. et al. Solution-processed semiconductors for next-generation photodetectors. Nat. Rev. Mater. 2 , 16100 (2017)..
Othman, D. M. et al. Solution-processed colloidal quantum dots for internet of things. Nanoscale 16 , 10947–10974 (2024)..
Clifford, J. P. et al. Fast, sensitive and spectrally tuneable colloidal-quantum-dot photodetectors. Nat. Nanotechnol. 4 , 40–44 (2009)..
Konstantatos, G. et al. Sensitive solution-processed visible-wavelength photodetectors. Nat. Photonics 1 , 531–534 (2007)..
McDonald, S. A. et al. Solution-processed PbS quantum dot infrared photodetectors and photovoltaics. Nat. Mater. 4 , 138–142 (2005)..
Goossens, S. et al. Broadband image sensor array based on graphene–CMOS integration. Nat. Photonics 11 , 366–371 (2017)..
Kufer, D. et al. Hybrid 2D-0D MoS 2 -PbS quantum dot photodetectors. Adv. Mater. 27 , 176–180 (2015)..
Özdemir, O . et al. High sensitivity hybrid PbS CQD-TMDC photodetectors up to 2 μm. ACS Photonics 6 , 2381–2386 (2019)..
Hwang, D. K. et al. Ultrasensitive PbS quantum-dot-sensitized InGaZnO hybrid photoinverter for near-infrared detection and imaging with high photogain. NPG Asia Mater. 8 , e233 (2016)..
Cho, K. S. et al. Color-selective photodetection from intermediate colloidal quantum dots buried in amorphous-oxide semiconductors. Nat. Commun. 8 , 840 (2017)..
Hines, D. A. & Kamat, P. V. Quantum dot surface chemistry: ligand effects and electron transfer reactions. J. Phys. Chem. C 117 , 14418–14426 (2013)..
Kagan, C. R. & Murray, C. B. Charge transport in strongly coupled quantum dot solids. Nat. Nanotechnol. 10 , 1013–1026 (2015)..
Brown, P. R. et al. Energy level modification in lead sulfide quantum dot thin films through ligand exchange. ACS Nano 8 , 5863–5872 (2014)..
Hou, B. et al. Highly monodispersed PbS quantum dots for outstanding cascaded-junction solar cells. ACS Energy Lett. 1 , 834–839 (2016)..
Adinolfi, V. & Sargent, E. H. Photovoltage field-effect transistors. Nature 542 , 324–327 (2017)..
Xu, F. et al. Impact of different surface ligands on the optical properties of PbS quantum dot solids. Materials 8 , 1858–1870 (2015)..
Adinolfi, V. et al. Photojunction field-effect transistor based on a colloidal quantum dot absorber channel layer. ACS Nano 9 , 356–362 (2015)..
Konstantatos, G. et al. Ultrasensitive solution-cast quantum dot photodetectors. Nature 442 , 180–183 (2006)..
Teh, Z. L. et al. Enhanced power conversion efficiency via hybrid ligand exchange treatment of p-type PbS quantum dots. ACS Appl. Mater. Interfaces 12 , 22751–22759 (2020)..
Sulaman, M. et al. Hybrid bulk‐heterojunction of colloidal quantum d ots and mixed‐halide perovskite nanocrystals for high‐performance self‐powered broadband photodetectors. Adv. Funct. Mater. 32 , 2201527 (2022)..
Im, S. H. et al. All solid state multiply layered PbS colloidal quantum-dot-sensitized photovoltaic cells. Energy Environ. Sci. 4 , 4181–4186 (2011)..
Fukuda, T. et al. Limiting factor of performance for solution-phase ligand-exchanged PbS quantum dot solar cell. Sol. Energy Mater. Sol. Cells 195 , 220–227 (2019)..
Xu, F. et al. Efficient exciton funneling in cascaded PbS quantum dot superstructures. ACS Nano 5 , 9950–9957 (2011)..
Yu, H. et al. High-gain infrared-to-visible upconversion light-emitting phototransistors. Nat. Photonics 10 , 129–134 (2016)..
Zhang, J. et al. Carrier transport in PbS and PbSe QD films measured by photoluminescence quenching. J. Phys. Chem. C. 118 , 16228–16235 (2014)..
Cho, Y. et al. Balanced charge carrier transport mediated by quantum dot film post-organization for light-emitting diode applications. ACS Appl. Mater. Interfaces 13 , 26170–26179 (2021)..
Septianto, R. D. et al. Enabling metallic behaviour in two-dimensional superlattice of semiconductor colloidal quantum dots. Nat. Commun. 14 , 2670 (2023)..
Hou, B. et al. Evolution of local structural motifs in colloidal quantum dot semiconductor nanocrystals leading to nanofaceting. Nano Lett. 23 , 2277–2286 (2023)..
Fang, Y. J. et al. Accurate characterization of next-generation thin-film photodetectors. Nat. Photonics 13 , 1–4 (2019)..
Chow, P. C. Y. et al. Dual-gate organic phototransistor with high-gain and linear photoresponse. Nat. Commun. 9 , 4546 (2018)..
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