Peculiarities of room temperature organic photodetectors

Antoni Rogalski; Jin Wang; Fang Wang; Zhiping He; Weida Hu; Piotr Martyniuk

doi:10.1038/s41377-025-01939-2

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Peculiarities of room temperature organic photodetectors

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- Peculiarities of room temperature organic photodetectors
- Light: Science & Applications Vol. 14, Issue 12, Pages: 3812-3836(2025)
- Affiliations：
  
  1.Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland
  2.State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
- Author bio：
  
  Piotr Martyniuk (piotr.martyniuk@wat.edu.pl)
- Funds：
- DOI：10.1038/s41377-025-01939-2
  CLC：
- Received：11 December 2024，
  
  Revised：2025-03-07，
  
  Accepted：25 June 2025，
  
  Published Online：09 October 2025，
  
  Published：31 December 2025
- Accepted：
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Rogalski, A. et al. Peculiarities of room temperature organic photodetectors. Light: Science & Applications, 14, 3812-3836 (2025).
DOI：

Rogalski, A. et al. Peculiarities of room temperature organic photodetectors. Light: Science & Applications, 14, 3812-3836 (2025). DOI： 10.1038/s41377-025-01939-2.

摘要

Abstract

Organic semiconductors (OSCs) have been considered as projecting family of optoelectronic materials broadly investigated for more than 40 years due to capability to tune properties by adjusting chemical structure and simple

processing

. The OSCs performance has been substantially increased

due to the fast development in design and synthesis. The spectral response of OSCs was extended from ultraviolet (UV) to near infrared (NIR) wavelength region. There are papers reporting detectivity (

) higher than the physical limits set by signal fluctuations and background radiation. This paper attempts to explain the organic photodetectors' peculiarities when confronted with typical devices dominating the commercial market. To achieve this goal

the paper first briefly describes OSC deposition techniques

diametrically opposed to those used for standard semiconductors. This was followed by a more detailed discussion of basic physical properties

contributing to the photodetectors' performance including absorption coefficient

conduction mechanism

charge generation and charge transport. These effects are very different from those found in inorganic semiconductors (ISCs). The second part of the paper de

scribes the main modes of OSC based photodetectors [photoconductors

photodiodes and field effect transistor photodetectors (FET)

]

with emphasis on their special features that distinguish them from standard photodetectors. Final part of the paper shows current state-of-the-art of various types/structures of photodetectors and routes for further improvement. The upper detection limit for OSC photodiodes has been shown to be comparable to that for ISC photodiodes with nearly three orders of magnitude variation. The

overestimates (especially organic based FET phototransistors) were explained.

关键词

Keywords

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