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Volume 15 Issue 4，2026
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Abstract：A novel concept for distributed fiber sensing has recently been introduced, in which the sensing fiber itself forms a laser cavity. This configuration yields a high-quality response that is largely independent of position, thereby enhancing measurement accuracy and acquisition speed, and opening new avenues towards higher-performance sensing technologies.2|0|0Updated：2026-04-20- Abstract：By combining mid-infrared excitation with polarization-resolved photoacoustics, Park et al. introduce a novel label-free approach to visualize both molecular composition and fiber alignment in engineered tissues. This dual-contrast framework, termed MIR-DS-PAM, offers a new path toward analytical, quantitative histopathology.1|0|0Updated：2026-04-20
- Abstract：A versatile coherent Ising machine platform based on degenerate optical parametric oscillators has emerged as a powerful approach for solving NP-hard combinatorial optimization problems across diverse applications. Recent work demonstrated breakthroughs using femtosecond laser pumping, achieving a 55% success rate for 100-vertex Max-Cut problems with stable performance maintained for over 8 h. This versatile platform supports fully connected problem mapping and has been successfully validated across multiple domains including molecular docking and credit scoring, substantiating the practical potential of optical approaches for large-scale optimization and paving the way for broad integration into industrial applications.2|0|0Updated：2026-04-20
Original Articles
Abstract：Quantum key distribution (QKD) with deterministic single photon sources has been demonstrated over intercity fiber and free-space channels. The previous implementations relied mainly on polarization encoding schemes, which are susceptible to birefringence, polarization-mode dispersion and polarization-dependent loss in practical fiber networks. In contrast, time-bin encoding offers inherent robustness and has been widely adopted in mature QKD systems using weak coherent laser pulses. However, its feasibility in conjunction with a deterministic single-photon source has not yet been experimentally demonstrated. In this work, we construct a time-bin encoded QKD system employing a high-brightness quantum dot (QD) single-photon source operating at telecom wavelength. Our proof-of-concept experiment successfully demonstrates the possibility of secure key distribution over fiber link of 120 km, while maintaining extraordinary long-term stability over 6 h of continuous operation, that is highest secure key rate among the time-bin QKDs based on single-photon sources. This work provides the first experimental validation of integrating a QD single-photon source with time-bin encoding in a telecom-band QKD system. This development signifies a substantial advancement in the establishment of a robust and scalable QKD network based on solid-state single-photon technology.1|0|0Updated：2026-04-20- Abstract：The advancement of nanophotonic devices is significantly dependent on achieving high-precision inverse design capabilities, which are critical for identifying optimal structural configurations that enable enhanced and multifunctional performances. The process of inverse design confronts a one-to-many relationship due to the complex mapping between optical performance and structure. Though several approaches, including tandem networks, mixture density networks (MDN), and conditional generative adversarial networks, have shown promising outcomes, they still face accuracy limitations when confronted with structures with higher degrees of freedom. Here, we propose a sampling-enhanced MDN called a mixture probability sampling network (MPSN), that outputs mixture Gaussian distributions (MGDs) of structural parameters through an end-to-end framework. The results of multiple samples drawn from the MGDs are fed into a pre-trained network, and the sample that minimizes the error relative to the real data is selected for network training. We benchmark the high performance in nanophotonics through the structural color design, achieving a high precision of up to 99.9% and a mean absolute error of less than 0.002. This work paves the way for resolving intricate inverse design problems in nanophotonics.1|0|0Updated：2026-04-20
- Abstract：Flexible mechanoluminescence (ML) elastomers show significant potential for next-generation wearable electronics, artificial skin, advanced sensing, and human-machine interaction. However, their broader application has been hindered by challenges such as restricted emission wavelengths, inadequate repeatability, insufficient cyclic stability, and poor self-recovery. Here, we report an innovative and high-performance solar-blind ultraviolet ML elastomer by combining commercial polydimethylsiloxane (PDMS) and newly fabricated Sr3(BO3)2:Pr3+ phosphors, capable of generating intense ultraviolet-C (UVC) ML peaked at 272 nm under mechanical stimulation. The composite elastomer exhibits exceptional repeatability and cyclic stability, maintaining detectable UVC emission over 10,000 continuous stretching cycles (power intensity at the 1st cycle is ~6.2 mW m−2). It also demonstrates rapid and efficient self-recovery behavior, restoring 43.2% of its initial intensity within 1 s and 90.2% after 24 h. Combined experimental and theoretical analyses reveal that interfacial triboelectrification, involving electron transfer from the phosphor to the PDMS matrix, leads to the observed UVC ML emission. Leveraging the solar-blind nature and high photon energy of UVC light, we further demonstrate the feasibility of self-powered photonics applications. This work not only offers novel insights into the design of advanced UVC ML systems but also provides “power-free” solutions for important applications where UVC photons are essential, such as outdoor optical tagging and microbial sterilization.2|0|0Updated：2026-04-20
- Abstract：Narrow-linewidth vertical-cavity surface-emitting lasers (VCSELs) are key enablers for chip-scale atomic clocks and quantum sensors, yet conventional designs suffer from short cavity lengths and excess spontaneous emission, resulting in broad linewidths and degraded frequency stability. Here, we demonstrate a monolithically integrated VCSEL operating at the cesium D1 line (894.6 nm) that achieves intrinsic linewidth compression to ~1 MHz, without requiring external optical feedback. This performance is enabled by embedding a passive cavity adjacent to the active region, which spatially redistributes the optical field into a low-loss region, extending photon lifetime while suppressing higher-order transverse and longitudinal modes. The resulting device exhibits robust single-mode operation over a wide current and temperature range, with side-mode suppression ratio (SMSR) > 35 dB, orthogonal polarization suppression ratio (OPSR) > 25 dB and a beam divergence of ~7°. Integrated into a Cesium vapor-cell atomic clock, the VCSEL supports a frequency stability of 1.89 × 10–12 τ-1/2. These results position this VCSEL architecture as a compact, scalable solution for next-generation quantum-enabled frequency references and sensing platforms.2|0|0Updated：2026-04-20
- Abstract：Ⅲ–Ⅴ photonic crystal (PhC) lasers with small footprints and low power consumption are potential ultra-compact and power-efficient light sources for future on-chip optical interconnects. Conventional PhC lasers fabricated by vertical epitaxy require suspended air-bridge structures and air holes etched through the gain medium, severely compromising mechanical resistance to external impacts and pumping efficiency. While bonding and regrowth can mitigate these issues, their fabrication complexity substantially increases process costs and hinders mass production. Here, we address these issues using selective lateral heteroepitaxy and demonstrate monolithically integrated Ⅲ–Ⅴ membrane PhC lasers on (001) silicon-on-insulator (SOI). By leveraging selective lateral heteroepitaxy and metal organic chemical vapor deposition (MOCVD), we achieved the growth of dislocation-free InP membranes on SOI wafers patterned in Si-photonics foundries. The unique Ⅲ-Ⅴ-on-insulator avoids the formation of air-suspended structures and significantly enhances the mechanical stability of the devices. We also precisely positioned the laterally grown InGaAs/InP quantum wells (QWs) at the center of the InP membrane to avoid etching air holes through the gain medium, thus eliminating surface recombination and drastically improving pumping efficiency. We fabricated near-infrared and telecom PhC lasers using laterally grown Ⅲ–Ⅴ membranes, and achieved room-temperature lasing at 910 nm and 1430 nm with low thresholds of 17.5 μJ/cm2 and 5.7 μJ/cm2, respectively. Our results establish a novel approach for fabricating PhC lasers and provide an elegant solution for monolithically integrated PhC lasers in next-generation optical interconnects.2|0|0Updated：2026-04-20
- Abstract：Reflections from on-chip components pose significant challenges to stable laser operation in photonic integrated circuits (PICs). Quantum dot (QD) lasers, with low linewidth enhancement factors and high damping rates, are promising for isolator-free integration, yet earlier feedback studies were capped near −10 dB feedback and never reached coherence collapse (CC). As a result, one could only conclude that QD lasers tolerate feedback up to –10 dB, leaving open whether they remain reliable in practical PICs where lower coupling losses allow much stronger feedback. Here, we optimized QD lasers through advanced epitaxial growth and fabrication and developed a setup that delivers feedback up to 0 dB. Under these conditions, we observed CC at −6.7 dB (21.4% feedback), extending the feedback tolerance by tens of decibels beyond quantum-well (QW) lasers. We further demonstrated penalty-free 10 Gbps operation, robust thermal stability with ±0.5 dB drift across 15–45 ℃, >100 h continuous testing, and ~±0.3 dB reproducibility across devices. Modeling indicates even stronger tolerance in realistic PIC cavities, and benchmarking shows our device rivals hybrid DFB–resonator platforms while outperforming other QW, QD, and VCSEL lasers. Together, this work provides the most comprehensive assessment of QD laser feedback tolerance to date and establishes practical design rules for isolator-free PICs.2|0|0Updated：2026-04-20
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