High-brightness polarized light-emitting diodes

Elison Matioli; Stuart Brinkley; Kathryn M Kelchner; Yan-Ling Hu; Shuji Nakamura; Steven DenBaars; James Speck; Claude Weisbuch

doi:10.1038/lsa.2012.22

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High-brightness polarized light-emitting diodes

Original Article

- High-brightness polarized light-emitting diodes
- Light: Science & Applications Vol. 1, Issue 1, (2012)
- Affiliations：
  
  1.Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
  2.Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA, USA
  3.Materials Department, University of California, Santa Barbara, CA, USA
  4.Laboratoire de Physique de la Matière Condensée, CNRS, Ecole Polytechnique, Palaiseau, France
- Author bio：
  
  Dr E Matioli, Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Rm 39-663, Cambridge, MA 02139, USA E-mail: elison.matioli@polytechnique.org
- Funds：
- DOI：10.1038/lsa.2012.22
  CLC：
- Published：2012-03，
  
  Published Online：03 August 2012，
  
  Received：13 January 2012，
  
  Revised：07 May 2012，
  
  Accepted：10 May 2012
- Accepted：
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Matioli, E. et al. High-brightness polarized light-emitting diodes. Light: Science & Applications, 1, e22 (2012).
DOI：

Matioli, E. et al. High-brightness polarized light-emitting diodes. Light: Science & Applications, 1, e22 (2012). DOI： 10.1038/lsa.2012.22.

摘要

Abstract

Light-emitting diodes are becoming the alternative for future general lighting applications

with huge energy savings compared to conventional light sources owing to their high efficiency and reliability. Polarized light sources would largely enhance the efficiency in a number of applications

such as in liquid-crystal displays

and also greatly improve contrast in general illumination due to the reduction in indirect glare. Here

we demonstrate light-emitting diodes presenting high-brightness polarized light emission by combining the polarization-preserving and directional extraction properties of embedded photonic-crystals applied to non-polar gallium nitride. A directional enhancement of up to 1.8-fold was observed in the total polarized light emission together with a high polarization degree of 88.7% at 465 nm. We discuss the mechanisms of polarized light emission in non-polar gallium nitride and the photonic-crystal design rules to further increase the light-emitting diode brightness. This work could open the way to polarized white-light emitters through their association with polarization-preserving down-converting phosphors.

关键词

Keywords

GaNLEDsm-planepolarized light

references

Pimputkar S, Speck JS, DenBaars SP, Nakamura S. Prospects for LED lighting.Nat Photon2009;3: 180–182..

Clear R, Mistrick RG. Multilayer polarizers: a review of the claims.J Illum Eng Soc1996;25: 70–88..

Japuntich DA. Polarized task lighting to reduce reflective glare in open-plan office cubicles.Appl Ergon2001;32: 485–499..

Cornelissen HJ, Jagt HJ, Broer DJ, Bastiaansen CW. Efficient and cost-effective polarized-light backlights for LCDs.Proc SPIE2008;7058: 70580X1..

Ecological Society of America. Polarized Light Leads Animals Astray: 'Ecological Traps' Cause Animal Behaviors That Can Lead To Death. ScienceDaily. Available at:http://www.sciencedaily.com/releases/2009/01/090107092714.htmhttp://www.sciencedaily.com/releases/2009/01/090107092714.htm(accessed 7 January 2009).

Chichibu S, Azuhata T, Sota T, Nakamura S. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures.Appl Phys Lett1996;69: 4188–4190..

Waltereit P, Brandt O, Trampert A, Grahn HT, Menniger Jet al. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes.Nature2000;406: 865–868..

Chakraborty A, Haskell BA, Keller S, Speck JS, Denbaars SPet al. Demonstration of nonpolarm-plane InGaN/GaN light-emitting diodes on free-standingm-plane GaN substrates.J Appl Phys2005;44: L173–L175..

Schmidt MC, Kim KC, Sato H, Fellows N, Masui Het al. High power and high external efficiencym-plane InGaN light emitting diodes.J Appl Phys2007;46: L126–L128..

Gardner NF, Kim JC, Wierer JJ, Shen YC, Krames MR. Polarization anisotropy in the electroluminescence ofm-plane InGaN–GaN multiple-quantum-well light-emitting diodes.Appl Phys Lett2005;86: 111101..

Tsujimura H, Nakagawa S, Okamoto K, Ohta H. Characteristics of polarized electroluminescence fromm-plane InGaN-based light emitting diodes.J Appl Phys2007;46: L1010–L1012..

Kubota M, Okamoto K, Tanaka T, Ohta H. Temperature dependence of polarized photo-luminescence from nonpolarm-plane InGaN multiple quantum wells for blue laser diodes.Appl Phys Lett2008;92: 011920..

Brinkley SE, Lin YD, Chakraborty A, Pfaff N, Cohen Det al. Polarized spontaneous emission from blue-greenm-plane GaN-based light emitting diodes.Appl Phys Lett2011;98: 011110..

Fujii T, Gao Y, Sharma R, Hu EL, DenBaars SPet al. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening.Appl Phys Lett2004;84: 855–857..

Yamada M, Mitani T, Narukawa Y, Shioji S, Niki Iet al. InGaN-based near-ultraviolet and blue light emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode.J Appl Phys2002;41: L1431–L1433..

Wierer JJ, David A, Megens MM. Ⅲ-nitride photonic-crystal light-emitting diodes with high extraction efficiency.Nat Photon2009;3: 163–169..

Matioli E, Rangel E, Iza M, Fleury B, Pfaff Net al. High extraction efficiency LED based on embedded air-gap photonic-crystals.Appl Phys Lett2010;96: 031108..

DeMille NF, Denbaars SP, Nakamura S. Linearly polarized backlight source in conjunction with polarized phosphor emission screens for use in liquid crystal displays. US Patent 12/536,400, 5 August 2009.

Mulder CL, Reusswig PD, Beyler AP, Kim H, Rotschild Cet al. Dye alignment in luminescent solar concentrators: Ⅱ. Horizontal alignment for energy harvesting in linear polarizers.Opt Express2010;18: A91..

Matioli E, Keller S, Wu F, Choi YS, Hu Eet al. Growth of embedded photonic crystals for GaN-based optoelectronic devices.J Appl Phys2009;106: 024309..

Getty A, Matioli E, Iza M, Weisbuch C, Speck J. Electroluminescent measurement of the internal quantum efficiency of light emitting diodes.Appl Phys Lett2009;94: 181102..

Born M.Atomic physics. 8th ed. London: Blackie&Son Limited, 1969.

Ghosh S, Waltereit P, Brandt O, Grahn HT, Ploog KH. Electronic band structure of wurtzite GaN under biaxial strain in theMplane investigated with photoreflectance spectroscopy.Phys. Rev B2002;65: 075202..

Sun YJ, Brandt O, Ramsteiner M, Grahn HT, Ploog KH. Polarization anisotropy of the photoluminescence ofm-plane (In, Ga)N/GaN multiple quantum wells.Appl Phys Lett2003;82: 22..

Matioli E, Fleury B, Rangel E, Melo T, Hu Eet al. High extraction efficiency GaN-based photonic-crystal light-emitting diodes: comparison of extraction lengths between surface and embedded photonic-crystals.Appl Phys Express2010;3: 032103..

Matioli E, Weisbuch C. Impact of photonic crystals on LED light extraction efficiency: approaches and limits to vertical structure designs.J Phys D: Appl Phys2010;43: 354005..

David A, Benisty H, Weisbuch C. Optimization of light-diffracting photonic-crystals for high extraction efficiency LEDs.J Display Technol2007;3: 133–148..

Lai CF, Chi JY, Yen HH, Kuo HC, Chao CHet al. Polarized light emission from photonic crystal light-emitting diodes.Appl Phys Lett2008;92: 243118..

Jackson JD.Classical electrodynamics. New York: Wiley, 1998.

Matioli E, Brinkley S, Kelchner K, Nakamura S, DenBaars Set al. Polarized light extraction in m-plane GaN light-emitting diodes by embedded photonic crystals.Appl Phys Lett2011;98: 251112..

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