1.Van der Waals-Zeeman Institute, University of Amsterdam, NL-1098 XH Amsterdam, The Netherlands
2.Laboratory of Organic Chemistry, Wageningen University, 6703 HB Wageningen, The Netherlands
3.Department of Chemical and Materials Engineering, King Abdulaziz University, Jeddah, Saudi Arabia
4.Ioffe Physical-Technical Institute RAS, 26 Polytechnicheskaya, 194021 Saint-Petersburg, Russia
5.Current address: MIRA Institute, Department of Biomedical Chemistry, University of Twente, Building Zuidhorst Enschede, The Netherlands
Author bio:
Dr K Dohnalová, Van der Waals-Zeeman Institute, University of Amsterdam, Science Park 904, NL-1098 XH Amsterdam, The Netherlands E-mail: k.dohnalova@uva.nl
Dohnalová, K. et al. Surface brightens up Si quantum dots: direct bandgap-like size-tunable emission. Light: Science & Applications, 2, e47 (2013).
DOI:
Dohnalová, K. et al. Surface brightens up Si quantum dots: direct bandgap-like size-tunable emission. Light: Science & Applications, 2, e47 (2013). DOI: 10.1038/lsa.2013.3.
Surface brightens up Si quantum dots: direct bandgap-like size-tunable emission
Colloidal semiconductor quantum dots (QDs) constitute a perfect material for ink-jet printable large area displays
photovoltaics
light-emitting diode
bio-imaging luminescent markers and many other applications. For this purpose
efficient light emission/absorption and spectral tunability are necessary conditions. These are currently fulfilled by the direct bandgap materials. Si-QDs could offer the solution to major hurdles posed by these materials
namely
toxicity (e.g.
Cd-
Pb- or As-based QDs)
scarcity (e.g.
QD with In
Se
Te) and/or instability. Here we show that by combining quantum confinement with dedicated surface engineering
the biggest drawback of Si—the indirect bandgap nature—can be overcome
and a 'direct bandgap' variety of Si-QDs is created. We demonstrate this transformation on chemically synthesized Si-QDs using state-of-the-art optical spectroscopy and theoretical modelling. The carbon surface termination gives rise to drastic modification in electron and hole wavefunctions and radiative transitions between the lowest excited states of electron and hole attain 'direct bandgap-like' (phonon-less) character. This results in efficient fast emission
tunable within the visible spectral range by QD size. These findings are fully justified within a tight-binding theoretical model. When the C surface termination is replaced by oxygen
the emission is converted into the well-known red luminescence
with microsecond decay and limited spectral tunability. In that way
the 'direct bandgap' Si-QDs convert into the 'traditional' indirect bandgap form
thoroughly investigated in the past.
关键词
Keywords
direct bandgapoptical spectroscopyoptoelectronicsorganic cappingsilicon quantum dotstight binding model
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