Direct generation of linearly polarized photon emission with designated orientations from site-controlled InGaN quantum dots

Anders Lundskog; Chih-Wei Hsu; K Fredrik Karlsson; Supaluck Amloy; Daniel Nilsson; Urban Forsberg; Per Olof Holtz; Erik Janzén

doi:10.1038/lsa.2014.20

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Direct generation of linearly polarized photon emission with designated orientations from site-controlled InGaN quantum dots

Original Articles

- Direct generation of linearly polarized photon emission with designated orientations from site-controlled InGaN quantum dots
- Light: Science & Applications Vol. 3, Issue 1, (2014)
- Affiliations：
  
  1.Department of Physics Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping, Sweden
  2.Department of Physics, Faculty of Science, Thaksin University, Phattalung 93110, Thailand
- Author bio：
  
  Dr A Lundskog, Department of Physics Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping, Sweden E-mail: anlun@ifm.liu.se
- Funds：
- DOI：10.1038/lsa.2014.20
  CLC：
- Published：2014-03，
  
  Published Online：31 January 2014，
  
  Received：22 April 2013，
  
  Revised：29 September 2013，
  
  Accepted：11 October 2013
- Accepted：
Scan QR Code
Lundskog, A. et al. Direct generation of linearly polarized photon emission with designated orientations from site-controlled InGaN quantum dots. Light: Science & Applications, 3, e139 (2014).
DOI：

Lundskog, A. et al. Direct generation of linearly polarized photon emission with designated orientations from site-controlled InGaN quantum dots. Light: Science & Applications, 3, e139 (2014). DOI： 10.1038/lsa.2014.20.

摘要

Abstract

Semiconductor quantum dots (QDs) have been demonstrated viable for efficient light emission applications

in particular for the emission of single photons on demand. However

the preparation of QDs emitting photons with predefined and deterministic polarization vectors has proven arduous. Access to linearly polarized photons is essential for various applications. In this report

a novel concept to directly generate linearly-polarized photons is presented. This concept is based on InGaN QDs grown on top of elongated GaN hexagonal pyramids

by which the predefined elongation determines the polarization vectors of the emitted photons from the QDs. This growth scheme should allow fabrication of ultracompact arrays of photon emitters

with a controlled polarization direction for each individual emitter.

关键词

Keywords

GaNInGaNphotoluminescencepolarized emissionquantum dot

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