1.Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore
2.Institute of Materials Research and Engineering, Agency for Science, Technology and Research, Singapore 117602, Singapore
3.NUS Environmental Research Institute, National University of Singapore, Singapore 117411, Singapore
4.State Key Laboratory of Optical Technologies for Microfabrication, Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu 610209, China
Author bio:
Professor MH Hong, Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576, Singapore Email: elehmh@nus.edu.sg
Yang, J. et al. Design and fabrication of broadband ultralow reflectivity black Si surfaces by laser micro/nanoprocessing. Light: Science & Applications, 3, e185 (2014).
DOI:
Yang, J. et al. Design and fabrication of broadband ultralow reflectivity black Si surfaces by laser micro/nanoprocessing. Light: Science & Applications, 3, e185 (2014). DOI: 10.1038/lsa.2014.66.
Design and fabrication of broadband ultralow reflectivity black Si surfaces by laser micro/nanoprocessing
Light collection efficiency is an important factor that affects the performance of many optical and optoelectronic devices. In these devices
the high reflectivity of interfaces can hinder efficient light collection. To minimize unwanted reflection
anti-reflection surfaces can be fabricated by micro/nanopatterning. In this paper
we investigate the fabrication of broadband anti-reflection Si surfaces by laser micro/nanoprocessing. Laser direct writing is applied to create microstructures on Si surfaces that reduce light reflection by light trapping. In addition
laser interference lithography and metal assisted chemical etching are adopted to fabricate the Si nanowire arrays. The anti-reflection performance is greatly improved by the high aspect ratio subwavelength structures
which create gradients of refractive index from the ambient air to the substrate. Furthermore
by decoration of the Si nanowires with metallic nanoparticles
surface plasmon resonance can be used to further control the broadband reflections
reducing the reflection to below 1.0% across from 300 to 1200 nm. An average reflection of 0.8% is achieved.
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