Bright trions in direct-bandgap silicon nanocrystals revealed by low-temperature single-nanocrystal spectroscopy

Kateřina Kůsová; Ivan Pelant; Jan Valenta

doi:10.1038/lsa.2015.109

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Bright trions in direct-bandgap silicon nanocrystals revealed by low-temperature single-nanocrystal spectroscopy

Original Articles

- Bright trions in direct-bandgap silicon nanocrystals revealed by low-temperature single-nanocrystal spectroscopy
- Light: Science & Applications Vol. 4, Issue 4, (2015)
- Affiliations：
  
  1.Institute of Physics of the ASCR, v.v.i., Cukrovarnická 10, 162 00 Prague 6, Czech Republic
  2.Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, 121 16 Prague 2, Czech Republic
- Author bio：
  
  K Kůsová, Email: kusova@fzu.cz
- Funds：
- DOI：10.1038/lsa.2015.109
  CLC：
- Published：2015-12，
  
  Published Online：10 June 2015，
  
  Received：15 December 2014，
  
  Revised：07 June 2015，
  
  Accepted：09 June 2015
- Accepted：
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Kůsová, K., Pelant, I. & Valenta, J. Bright trions in direct-bandgap silicon nanocrystals revealed by low-temperature single-nanocrystal spectroscopy. Light: Science & Applications, 4, e336 (2015).
DOI：

Kůsová, K., Pelant, I. & Valenta, J. Bright trions in direct-bandgap silicon nanocrystals revealed by low-temperature single-nanocrystal spectroscopy. Light: Science & Applications, 4, e336 (2015). DOI： 10.1038/lsa.2015.109.

摘要

Abstract

Strain-engineered silicon nanocrystals (SiNCs) have recently been shown to possess direct bandgap. Here

we report the observation of a rich structure in the single-nanocrystal photoluminescence spectra of strain-engineered direct-bandgap SiNCs in the temperature range of 9–300 K. The relationship between individual types of spectra is discussed

and the numerical modeling of spectral diffusion of the experimentally acquired spectra reveals a common origin for most types. The intrinsic spectral shape is shown to be a structure that contains three peaks

approximately 150 meV apart

each of which possesses a Si phonon substructure. Narrow spectral lines

reaching ≤1 meV at 20 K

are detected. The observed temperature dependence of the spectral structure can be assigned to the radiative recombination of positively charged trions

in contrast to several previous reports linking a very similar shape to phonons in the surface capping layers. Our result serves as strong additional support for the direct-bandgap nature of the investigated SiNCs.

关键词

Keywords

direct bandgaplow-temperature single-nanocrystal spectroscopysilicon nanocrystalstrions

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