On-chip light sources for silicon photonics

Zhiping Zhou; Bing Yin; Jurgen Michel

doi:10.1038/lsa.2015.131

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On-chip light sources for silicon photonics

Reviews

- On-chip light sources for silicon photonics
- Light: Science & Applications Vol. 4, Issue 4, (2015)
- Affiliations：
  
  1.State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, China
  2.Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
- Author bio：
  
  Z Zhou, Email: zjzhou@pku.edu.cn
- Funds：
- DOI：10.1038/lsa.2015.131
  CLC：
- Published：2015-12，
  
  Published Online：05 August 2015，
  
  Received：25 December 2014，
  
  Revised：04 July 2015，
  
  Accepted：04 August 2015
- Accepted：
Scan QR Code
Zhou, Z. P., Yin, B. & Michel, J. On-chip light sources for silicon photonics. Light: Science & Applications, 4, e358 (2015).
DOI：

Zhou, Z. P., Yin, B. & Michel, J. On-chip light sources for silicon photonics. Light: Science & Applications, 4, e358 (2015). DOI： 10.1038/lsa.2015.131.

摘要

Abstract

Serving as the electrical to optical converter

the on-chip silicon light source is an indispensable component of silicon photonic technologies and has long been pursued. Here

we briefly review the history and recent progress of a few promising contenders for on-chip light sources in terms of operating wavelength

pump condition

power consumption

and fabrication process. Additionally

the performance of each contender is also assessed with respect to thermal stability

which is a crucial parameter to consider in complex optoelectronic integrated circuits (OEICs) and optical interconnections. Currently

Ⅲ-Ⅴ-based silicon (Si) lasers formed via bonding techniques demonstrate the best performance and display the best opportunity for commercial usage in the near future. However

in the long term

direct hetero-epitaxial growth of Ⅲ–Ⅴ materials on Si seems more promising for low-cost

high-yield fabrication. The demonstration of high-performance quantum dot (QD) lasers monolithically grown on Si strongly forecasts its feasibility and enormous potential for on-chip lasers. The superior temperature-insensitive characteristics of the QD laser promote this design in large-scale high-density OEICs. The Germanium (Ge)-on-Si laser is also competitive for large-scale monolithic integration in the future. Compared with a Ⅲ-Ⅴ-based Si laser

the biggest potential advantage of a Ge-on-Si laser lies in its material and processing compatibility with Si technology. Additionally

the versatility of Ge facilitates photon emission

modulation

and detection simultaneously with a simple process complexity and low cost.

关键词

Keywords

on-chip light sourcesoptical interconnectionsoptoelectronic integrated circuitsilicon photonics

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