Carrier multiplication in germanium nanocrystals

Saba Saeed; Chris de Weerd; Peter Stallinga; Frank CM Spoor; Arjan J Houtepen; Laurens DA Siebbeles; Tom Gregorkiewicz

doi:10.1038/lsa.2015.24

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Carrier multiplication in germanium nanocrystals

Original Articles

- Carrier multiplication in germanium nanocrystals
- Light: Science & Applications Vol. 4, Issue 1, (2015)
- Affiliations：
  
  1.Van der Waals-Zeeman Institute, University of Amsterdam, 1098 XH Amsterdam, The Netherlands
  2.FCT-DEEI, University of the Algarve, 8005-139 Faro, Portugal
  3.Optoelectronic Materials, Faculty of Applied Sciences, Delft University of Technology, 2628 BL Delft, The Netherlands
- Author bio：
  
  T Gregorkiewicz, Van der Waals-Zeeman Institute, University of Amsterdam, Science Park 904, 1098 XH Amsterdam, The Netherlands E-mail: T.Gregorkiewicz@uva.nl
- Funds：
- DOI：10.1038/lsa.2015.24
  CLC：
- Published：2015-03，
  
  Published Online：18 December 2014，
  
  Received：19 July 2014，
  
  Revised：04 December 2014，
  
  Accepted：14 December 2014
- Accepted：
Scan QR Code
Saeed, S. et al. Carrier multiplication in germanium nanocrystals. Light: Science & Applications, 4, e251 (2015).
DOI：

Saeed, S. et al. Carrier multiplication in germanium nanocrystals. Light: Science & Applications, 4, e251 (2015). DOI： 10.1038/lsa.2015.24.

摘要

Abstract

Carrier multiplication is demonstrated in a solid-state dispersion of germanium nanocrystals in a silicon–dioxide matrix. This is performed by comparing ultrafast photo-induced absorption transients at different pump photon energies below and above the threshold energy for this process. The average germanium nanocrystal size is approximately 5–6 nm

as inferred from photoluminescence and Raman spectra. A carrier multiplication efficiency of approximately 190% is measured for photo-excitation at 2.8 times the optical bandgap of germanium nanocrystals

deduced from their photoluminescence spectra.

关键词

Keywords

carrier multiplicationgermanium nanocrystalstransient absorption

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