Overcoming the fundamental light-extraction efficiency limitations of deep ultraviolet light-emitting diodes by utilizing transverse-magnetic-dominant emission

Dong Yeong Kim; Jun Hyuk Park; Jong Won Lee; Sunyong Hwang; Seung Jae Oh; Jungsub Kim; Cheolsoo Sone; E. Fred Schubert; Jong Kyu Kim

doi:10.1038/lsa.2015.36

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Overcoming the fundamental light-extraction efficiency limitations of deep ultraviolet light-emitting diodes by utilizing transverse-magnetic-dominant emission

Original Articles

- Overcoming the fundamental light-extraction efficiency limitations of deep ultraviolet light-emitting diodes by utilizing transverse-magnetic-dominant emission
- Light: Science & Applications Vol. 4, Issue 2, (2015)
- Affiliations：
  
  1.Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 790-784, Korea
  2.LED Business, Samsung Electronics, Yongin 446-920, Korea
  3.Future Chips Constellation, Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180, USA
- Author bio：
  
  JK Kim, Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 790-784, Korea E-mail: kimjk@postech.ac.kr
- Funds：
- DOI：10.1038/lsa.2015.36
  CLC：
- Published：2015-06，
  
  Published Online：06 January 2015，
  
  Received：22 October 2014，
  
  Revised：31 December 2014，
  
  Accepted：03 January 2015
- Accepted：
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Kim, D. Y. et al. Overcoming the fundamental light-extraction efficiency limitations of deep ultraviolet light-emitting diodes by utilizing transverse-magnetic-dominant emission. Light: Science & Applications, 4, e263 (2015).
DOI：

Kim, D. Y. et al. Overcoming the fundamental light-extraction efficiency limitations of deep ultraviolet light-emitting diodes by utilizing transverse-magnetic-dominant emission. Light: Science & Applications, 4, e263 (2015). DOI： 10.1038/lsa.2015.36.

摘要

Abstract

While the demand for deep ultraviolet (DUV) light sources is rapidly growing

the efficiency of current AlGaN-based DUV light-emitting diodes (LEDs) remains very low due to their fundamentally limited light-extraction efficiency (LEE)

calling for a novel LEE-enhancing approach to deliver a real breakthrough. Here

we propose sidewall emission-enhanced (SEE) DUV LEDs having multiple light-emitting mesa stripes to utilize inherently strong transverse-magnetic polarized light from the AlGaN active region and three-dimensional reflectors between the stripes. The SEE DUV LEDs show much enhanced light output power with a strongly upward-directed emission due to the exposed sidewall of the active region and Al-coated selective-area-grown n-type GaN micro-reflectors. The devices also show reduced operating voltage due to better n-type ohmic contact formed on the regrown n-GaN stripes when compared with conventional LEDs. Accordingly

the proposed approach simultaneously improves optical and electrical properties. In addition

strategies to further enhance the LEE up to the theoretical optimum value and control emission directionality are discussed.

关键词

Keywords

deep ultravioletlight-emitting diodeslight-extraction efficiency

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