
1.Department of Electronic Engineering, Optoelectronics Engineering Research Center, Xiamen University, Xiamen, Fujian 361005, China
2.Department of Electronic Engineering, East China Normal University, Shanghai 200241, China
3.Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
4.School of Solid State Physics, Technical University of Berlin, Berlin 10623, Germany
5.Department of Photonics and Institute of Electro-optical Engineering, Taiwan Chiao Tung University
BP Zhang, Email: bzhang@xmu.edu.cn
JP Liu, Email: jpliu2010@sinano.ac.cn
Published:2017-03,
Published Online:19 August 2016,
Received:22 April 2016,
Revised:11 August 2016,
Accepted:11 August 2016
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Mei, Y. et al. Quantum dot vertical-cavity surface-emitting lasers covering the 'green gap'. Light: Science & Applications, 6, e16199 (2017).
Mei, Y. et al. Quantum dot vertical-cavity surface-emitting lasers covering the 'green gap'. Light: Science & Applications, 6, e16199 (2017). DOI: 10.1038/lsa.2016.199.
Semiconductor vertical-cavity surface-emitting lasers (VCSELs) with wavelengths from 491.8 to 565.7 nm
covering most of the 'green gap'
are demonstrated. For these lasers
the same quantum dot (QD) active region was used
whereas the wavelength was controlled by adjusting the cavity length
which is difficult for edge-emitting lasers. Compared with reports in the literature for green VCSELs
our lasers have set a few world records for the lowest threshold
longest wavelength and continuous-wave (CW) lasing at room temperature. The nanoscale QDs contribute dominantly to the low threshold. The emitting wavelength depends on the electron–photon interaction or the coupling between the active layer and the optical field
which is modulated by the cavity length. The green VCSELs exhibit a low-thermal resistance of 915 kW
−1
which benefits the CW lasing. Such VCSELs are important for small-size
low power consumption full-color displays and projectors.
GaNInGaNquantum dotvertical-cavity surface-emitting laserwide-gap semiconductor
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