Optically controlled magnetic-field etching on the nano-scale

Takashi Yatsui; Toshiki Tsuboi; Maiku Yamaguchi; Katsuyuki Nobusada; Satoshi Tojo; Fabrice Stehlin; Olivier Soppera; Daniel Bloch

doi:10.1038/lsa.2016.54

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Optically controlled magnetic-field etching on the nano-scale

Original Articles

- Optically controlled magnetic-field etching on the nano-scale
- Light: Science & Applications Vol. 5, Issue 2, (2016)
- Affiliations：
  
  1.School of Engineering, University of Tokyo, Bunkyo-ku, Tokyo, 113-8656 Japan
  2.Department of Theoretical and Computational Molecular Science, Institute for Molecular Science, Myodaiji, Okazaki, 444-8585 Japan
  3.Faculty of Science and Engineering, Chuo University, Bunkyo-ku, Tokyo, 112-8551 Japan
  4.Institut de Sciences des Materiaux de Mulhouse (IS2M), CNRS UMR 7361, Université de Haute-Alsace, 15, rue Jean Starcky, BP 2488, Mulhouse Cedex 68057, France
  5.Laboratoire de Physique des Lasers, UMR 7538 du CNRS, Université Paris13-Sorbonne-Paris-Cité F-93430 Villetaneuse, France
- Author bio：
  
  T Yatsui, Email: yatsui@ee.t.u-tokyo.ac.jp
- Funds：
- DOI：10.1038/lsa.2016.54
  CLC：
- Published：2016-06，
  
  Published Online：02 December 2015，
  
  Received：29 June 2015，
  
  Revised：26 November 2015，
  
  Accepted：30 November 2015
- Accepted：
Scan QR Code
Yatsui, T. et al. Optically controlled magnetic-field etching on the nano-scale. Light: Science & Applications, 5, e16054 (2016).
DOI：

Yatsui, T. et al. Optically controlled magnetic-field etching on the nano-scale. Light: Science & Applications, 5, e16054 (2016). DOI： 10.1038/lsa.2016.54.

摘要

Abstract

Electric and magnetic fields play an important role in both chemical and physical reactions. However

since the coupling efficiency between magnetic fields and electrons is low in comparison with that between electric fields and electrons in the visible wavelength region

the magnetic field is negligible in photo-induced reactions. Here

we performed photo-etching of ZrO

nano-stripe structures

and identified an etching-property polarisation dependence. Specifically

the etching rate and etched profiles depend on the structure width. To evaluate this polarisation-dependent etching

we performed numerical calculations using a finite-difference time-domain method. Remarkably

the numerical results revealed that the polarisation-dependent etching properties were determined by the magnetic field distributions

rather than the electric field distributions. As nano-scale structures induce a localised magnetic field

the discovery of this etching dependence on the magnetic field is expected to introduce a new perspective on advanced nano-scale structure fabrication.

关键词

Keywords

nano-scalenear-field etchingoptically controlled magnetic-field interaction

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