Nonlinear terahertz devices utilizing semiconducting plasmonic metamaterials

Huseyin R Seren; Jingdi Zhang; George R Keiser; Scott J Maddox; Xiaoguang Zhao; Kebin Fan; Seth R Bank; Xin Zhang; Richard D Averitt

doi:10.1038/lsa.2016.78

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Nonlinear terahertz devices utilizing semiconducting plasmonic metamaterials

Original Articles

- Nonlinear terahertz devices utilizing semiconducting plasmonic metamaterials
- Light: Science & Applications Vol. 5, Issue 3, (2016)
- Affiliations：
  
  1.Laboratory for Microsystems Technology, Department of Mechanical Engineering, Boston University, Boston, MA 02215, USA
  2.Department of Physics, Boston University, Boston, MA 02215, USA
  3.Department of Physics, UC San Diego, La Jolla, CA 92093, USA
  4.School of Engineering, Brown University, Providence, RI 02912, USA
  5.Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78758, USA
- Author bio：
  
  X Zhang, Email: xinz@bu.edu
  RD Averitt, Email: raveritt@ucsd.edu
- Funds：
- DOI：10.1038/lsa.2016.78
  CLC：
- Published：2016-09，
  
  Published Online：26 January 2016，
  
  Received：21 September 2015，
  
  Revised：21 January 2016，
  
  Accepted：25 January 2016
- Accepted：
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Seren, H. R. et al. Nonlinear terahertz devices utilizing semiconducting plasmonic metamaterials. Light: Science & Applications, 5, e16078 (2016).
DOI：

Seren, H. R. et al. Nonlinear terahertz devices utilizing semiconducting plasmonic metamaterials. Light: Science & Applications, 5, e16078 (2016). DOI： 10.1038/lsa.2016.78.

摘要

Abstract

The development of responsive metamaterials has enabled the realization of compact tunable photonic devices capable of manipulating the amplitude

polarization

wave vector and frequency of light. Integration of semiconductors into the active regions of metallic resonators is a proven approach for creating nonlinear metamaterials through optoelectronic control of the semiconductor carrier density. Metal-free subwavelength resonant semiconductor structures offer an alternative approach to create dynamic metamaterials. We present InAs plasmonic disk arrays as a viable resonant metamaterial at terahertz frequencies. Importantly

InAs plasmonic disks exhibit a strong nonlinear response arising from electric field-induced intervalley scattering

resulting in a reduced carrier mobility thereby damping the plasmonic response. We demonstrate nonlinear perfect absorbers configured as either optical limiters or saturable absorbers

including flexible nonlinear absorbers achieved by transferring the disks to polyimide films. Nonlinear plasmonic metamaterials show potential for use in ultrafast terahertz (THz) optics and for passive protection of sensitive electromagnetic devices.

关键词

Keywords

nonlinear absorbersnonlinear metamaterialsplasmonic semiconductor metamaterialsterahertz metamaterialstransfer printing

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