Near-infrared and mid-infrared semiconductor broadband light emitters

Chun-Cai Hou; Hong-Mei Chen; Jin-Chuan Zhang; Ning Zhuo; Yuan-Qing Huang; Richard A Hogg; David TD Childs; Ji-Qiang Ning; Zhan-Guo Wang; Feng-Qi Liu; Zi-Yang Zhang

doi:10.1038/lsa.2017.170

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Near-infrared and mid-infrared semiconductor broadband light emitters

Original Articles

- Near-infrared and mid-infrared semiconductor broadband light emitters
- Light: Science & Applications Vol. 7, Issue 2, (2018)
- Affiliations：
  
  1.Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
  2.Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  3.College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
  4.School of Engineering, The University of Glasgow, Glasgow G12 8LT, UK
  5.Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
- Author bio：
  
  ZY Zhang, Email: zyzhang2014@sinano.ac.cn
- Funds：
- DOI：10.1038/lsa.2017.170
  CLC：
- Published：2018，
  
  Published Online：23 March 2018，
  
  Received：23 June 2017，
  
  Revised：29 November 2017，
  
  Accepted：02 December 2017
- Accepted：
Scan QR Code
Hou, C. C. et al. Near-infrared and mid-infrared semiconductor broadband light emitters. Light: Science & Applications, 2, 17170 (2018).
DOI：

Hou, C. C. et al. Near-infrared and mid-infrared semiconductor broadband light emitters. Light: Science & Applications, 2, 17170 (2018). DOI： 10.1038/lsa.2017.170.

摘要

Abstract

Semiconductor broadband light emitters have emerged as ideal and vital light sources for a range of biomedical sensing/imaging applications

especially for optical coherence tomography systems. Although near-infrared broadband light emitters have found increasingly wide utilization in these imaging applications

the requirement to simultaneously achieve both a high spectral bandwidth and output power is still challenging for such devices. Owing to the relatively weak amplified spontaneous emission

as a consequence of the very short non-radiative carrier lifetime of the inter-subband transitions in quantum cascade structures

it is even more challenging to obtain desirable mid-infrared broadband light emitters. There have been great efforts in the past 20 years to pursue high-efficiency broadband optical gain and very low reflectivity in waveguide structures

which are two key factors determining the performance of broadband light emitters. Here we describe the realization of a high continuous wave light power of > 20 mW and broadband width of > 130 nm with near-infrared broadband light emitters and the first mid-infrared broadband light emitters operating under continuous wave mode at room temperature by employing a modulation p-doped InGaAs/GaAs quantum dot active region with a 'J'-shape ridge waveguide structure and a quantum cascade active region with a dual-end analogous monolithic integrated tapered waveguide structure

respectively. This work is of great importance to improve the performance of existing near-infrared optical coherence tomography systems and describes a major advance toward reliable and cost-effective mid-infrared imaging and sensing systems

which do not presently exist due to the lack of appropriate low-coherence mid-infrared semiconductor broadband light sources.

关键词

Keywords

broadband light emittersoptical coherence tomographyquantum cascade structurequantum dot

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