
1.Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong 999077, China
2.Institute of Textiles and Clothing, The Hong Kong Polytechnic University, Hong Kong 999077, China
F Yan, Email: apafyan@polyu.edu.hk
Published:2017-09,
Published Online:22 February 2017,
Received:11 August 2016,
Revised:08 February 2017,
Accepted:13 February 2017
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Xie, C. et al. Ultrasensitive broadband phototransistors based on perovskite/organic-semiconductor vertical heterojunctions. Light: Science & Applications, 6, e17023 (2017).
Xie, C. et al. Ultrasensitive broadband phototransistors based on perovskite/organic-semiconductor vertical heterojunctions. Light: Science & Applications, 6, e17023 (2017). DOI: 10.1038/lsa.2017.23.
Organolead halide perovskites have emerged as the most promising materials for various optoelectronic devices
especially solar cells
because of their excellent optoelectronic properties. Here
we present the first report of low-voltage high-gain phototransistors based on perovskite/organic-semiconductor vertical heterojunctions
which show ultrahigh responsivities of ~10
9
A W
–1
and specific detectivities of ~10
14
Jones in a broadband region from the ultraviolet to the near infrared. The high sensitivity of the devices is attributed to a pronounced photogating effect that is mainly due to the long carrier lifetimes and strong light absorption in the perovskite material. In addition
flexible perovskite photodetectors have been successfully prepared via a solution process and show high sensitivity as well as excellent flexibility and bending durability. The high performance and facile solution-based fabrication of the perovskite/organic-semiconductor phototransistors indicate their promise for potential application for ultrasensitive broadband photodetection.
broadbandflexibleorganic semiconductorperovskitephotodetector
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