Band-structure-engineered high-gain LWIR photodetector based on a type-II superlattice

Arash Dehzangi; Jiakai Li; Manijeh Razeghi

doi:10.1038/s41377-020-00453-x

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Band-structure-engineered high-gain LWIR photodetector based on a type-II superlattice

Letters

- Band-structure-engineered high-gain LWIR photodetector based on a type-II superlattice
- Light: Science & Applications Vol. 10, Issue 2, Pages: 140-146(2021)
- Affiliations：
  
  Center for Quantum Devices, Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL 60208, USA
- Author bio：
  
  Manijeh Razeghi (razeghi@northwestern.edu)
- Funds：
- DOI：10.1038/s41377-020-00453-x
  CLC：
- Published：2021，
  
  Published Online：14 January 2021，
  
  Received：08 August 2020，
  
  Revised：26 November 2020，
  
  Accepted：08 December 2020
- Accepted：
Scan QR Code
Dehzangi, A., Li, J. K. & Razeghi, M. Band-structure-engineered high-gain LWIR photodetector based on a type-II superlattice. Light: Science & Applications, 10, 140-146 (2021).
DOI：

Dehzangi, A., Li, J. K. & Razeghi, M. Band-structure-engineered high-gain LWIR photodetector based on a type-II superlattice. Light: Science & Applications, 10, 140-146 (2021). DOI： 10.1038/s41377-020-00453-x.

摘要

Abstract

The LWIR and longer wavelength regions are of particular interest for new developments and new approaches to realizing long-wavelength infrared (LWIR) pho

todetectors with high detectivity and high responsivity. These photodetectors are highly desirable for applications such as infrared earth science and astronomy

remote sensing

optical communication

and thermal and medical imaging. Here

we report the design

growth

and characterization of a high-gain band-structure-engineered LWIR heterojunction phototransistor based on type-II superlattices. The 1/

cut-off wavelength of the device is 8.0 µm. At 77 K

unity optical gain occurs at a 90 mV applied bias with a dark current density of 3.2 × 10

-7

A/cm

. The optical gain of the device at 77 K saturates at a value of 276 at an applied bias of 220 mV. This saturation corresponds to a responsivity of 1284 A/W and a specific detectivity of 2.34 × 10

cm Hz

1/2

/W at a peak detection wavelength of ~6.8 µm. The type-II superlattice-based high-gain LWIR device shows the possibility of designing the high-performance gain-based LWIR photodetectors by implementing the band structure engineering approach.

关键词

Keywords

references

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