Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes

Jinchai Li; Na Gao; Duanjun Cai; Wei Lin; Kai Huang; Shuping Li; Junyong Kang

doi:10.1038/s41377-021-00563-0

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Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes

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- Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes
- Light: Science & Applications Vol. 10, Issue 7, Pages: 1207-1226(2021)
- Affiliations：
  
  Engineering Research Center of Micro-nano Optoelectronic Materials and Devices, Ministry of Education, Fujian Key Laboratory of Semiconductor Materials and Applications, CI center for OSED, College of Physical Science and Technology, Xiamen University, 361005, Xiamen, China
- Author bio：
  
  Duanjun Cai (dcai@xmu.edu.cn)
  Junyong Kang (jykang@xmu.edu.cn)
- Funds：
- DOI：10.1038/s41377-021-00563-0
  CLC：
- Published：31 July 2021，
  
  Published Online：16 June 2021，
  
  Received：10 December 2020，
  
  Revised：25 April 2021，
  
  Accepted：24 May 2021
- Accepted：
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Li, J. C. et al. Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes. Light: Science & Applications, 10, 1207-1226 (2021).
DOI：

Li, J. C. et al. Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes. Light: Science & Applications, 10, 1207-1226 (2021). DOI： 10.1038/s41377-021-00563-0.

摘要

Abstract

As demonstrated during the COVID-19 pandemic

advanced deep ultraviolet (DUV) light sources (200–280 nm)

such as AlGaN-based light-emitting diodes (LEDs) show excellence in preventing virus transmission

which further reveals their wide applications from biological

environmental

industrial to medical. However

the relatively low external quantum efficiencies (mostly lower than 10%) strongly restrict their wider or even potential applications

which have been known related to the intrinsic properties of high Al-content AlGaN semiconductor materials and especially their quantum structures. Here

we review recent progress in the development of novel concepts and techniques in AlGaN-based LEDs and summarize the multiple physical fields as a toolkit for effectively controlling and tailoring the crucial properties of nitride quantum structures. In addition

we describe the key challenges for further increasing the efficiency of DUV LEDs and provide an outlook for future developments.

关键词

Keywords

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