High spectro-temporal compression on a nonlinear CMOS-chip

Ju Won Choi; Ezgi Sahin; Byoung-Uk Sohn; George F. R. Chen; Doris K. T. Ng; Anuradha M. Agarwal; Lionel C. Kimerling; Dawn T. H. Tan

doi:10.1038/s41377-021-00572-z

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High spectro-temporal compression on a nonlinear CMOS-chip

Articles

- High spectro-temporal compression on a nonlinear CMOS-chip
- Light: Science & Applications Vol. 10, Issue 7, Pages: 1347-1361(2021)
- Affiliations：
  
  1.Photonics Devices and System Group, SUTD-MIT International Design Center, Singapore University of Technology and Design, Singapore, 487372, Singapore
  2.Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, #08-02, Innovis Tower, Singapore, 138634, Singapore
  3.Microphotonics Center, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA, 02139, USA
  4.Materials Research Laboratory, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA, 02139, USA
  5.Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA, 02139, USA
- Author bio：
  
  Dawn T. H. Tan (dawntan@mit.edu)
- Funds：
- DOI：10.1038/s41377-021-00572-z
  CLC：
- Published：2021，
  
  Published Online：18 June 2021，
  
  Received：04 March 2021，
  
  Revised：24 May 2021，
  
  Accepted：04 June 2021
- Accepted：
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Choi, J. W. et al. High spectro-temporal compression on a nonlinear CMOS-chip Light: Science & Applications, 10, 1347-1361 (2021).
DOI：

Choi, J. W. et al. High spectro-temporal compression on a nonlinear CMOS-chip Light: Science & Applications, 10, 1347-1361 (2021). DOI： 10.1038/s41377-021-00572-z.

摘要

Abstract

Optical pulses are fundamentally defined by their temporal and spectral properties. The ability to control pulse properties allows practitioners to efficiently leverage them for advanced metrology

high speed optical communications and attosecond science. Here

we report 11× temporal compression of 5.8 ps pulses to 0.55 ps using a low power of 13.3 W. The result is accompanied by a significant increase in the pulse peak power by 9.4×. These results represent the strongest temporal compression demonstrated to date on a complementary metal–oxide–semiconductor (CMOS) chip. In addition

we report the first demonstration of on-chip spectral compression

3.0× spectral compression of 480 fs pulses

importantly while preserving the pulse energy. The strong compression achieved at low powers harnesses advanced on-chip device design

and the strong nonlinear properties of backend-CMOS compatible ultra-silicon-rich nitride

which possesses absence of two-photon absorption and 500× larger nonlinear parameter than in stoichiometric silicon nitride waveguides. The demonstrated work introduces an important new paradigm for spectro-temporal compression of optical pulses toward turn-key

on-chip integrated systems for all-optical pulse control.

关键词

Keywords

references

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