High-Q microresonators on 4H-silicon-carbide-on-insulator platform for nonlinear photonics

Chengli Wang; Zhiwei Fang; Ailun Yi; Bingcheng Yang; Zhe Wang; Liping Zhou; Chen Shen; Yifan Zhu; Yuan Zhou; Rui Bao; Zhongxu Li; Yang Chen; Kai Huang; Jiaxiang Zhang; Ya Cheng; Xin Ou

doi:10.1038/s41377-021-00584-9

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High-Q microresonators on 4H-silicon-carbide-on-insulator platform for nonlinear photonics

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- High-Q microresonators on 4H-silicon-carbide-on-insulator platform for nonlinear photonics
- Light: Science & Applications Vol. 10, Issue 8, Pages: 1474-1484(2021)
- Affiliations：
  
  1.State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050 Shanghai, China
  2.The Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049 Beijing, China
  3.The Extreme Optoelectromechanics Laboratory (XXL), School of Physics and Electronic Science, East China Normal University, 200241 Shanghai, China
  4.State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, 201800 Shanghai, China
- Author bio：
  
  Jiaxiang Zhang (jiaxiang.zhang@mail.sim.ac.cn)
  Ya Cheng (ya.cheng@siom.ac.cn)
  Xin Ou (ouxin@mail.sim.ac.cn)
- Funds：
- DOI：10.1038/s41377-021-00584-9
  CLC：
- Published：31 August 2021，
  
  Published Online：05 July 2021，
  
  Received：17 May 2021，
  
  Revised：23 June 2021，
  
  Accepted：24 June 2021
- Accepted：
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Wang, C. L. et al. High-Q microresonators on 4H-silicon-carbide-on-insulator platform for nonlinear photonics. Light: Science & Applications, 10, 1474-1484 (2021).
DOI：

Wang, C. L. et al. High-Q microresonators on 4H-silicon-carbide-on-insulator platform for nonlinear photonics. Light: Science & Applications, 10, 1474-1484 (2021). DOI： 10.1038/s41377-021-00584-9.

摘要

Abstract

The realization of high-quality (Q) resonators regardless of the underpinning material platforms has been a ceaseless pursuit

because the high-Q resonators provide an extreme environment for confining light to enable observations of many nonlinear optical phenomenon with high efficiencies. Here

photonic microresonators with a mean Q factor of 6.75 × 10

were demonstrated on a 4H-silicon-carbide-on-insulator (4H-SiCOI) platform

as determined by a statistical analysis of tens of resonances. Using these devices

broadband frequency conversions

including second-

third-

and fourth-harmonic generations have been observed. Cascaded Raman lasing has also been demonstrated in our SiC microresonator for the first time

to the best of our knowledge. Meanwhile

by engineering the dispersion properties of the SiC microresonator

we have achieved broadband Kerr frequency combs covering from 1300 to 1700 nm. Our demonstration represents a significant milestone in the development of SiC photonic integrated devices.

关键词

Keywords

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