Metalorganic chemical vapor deposition of InN quantum dots and nanostructures

Caroline E. Reilly; Stacia Keller; Shuji Nakamura; Steven P. DenBaars

doi:10.1038/s41377-021-00593-8

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Metalorganic chemical vapor deposition of InN quantum dots and nanostructures

Reviews

- Metalorganic chemical vapor deposition of InN quantum dots and nanostructures
- Light: Science & Applications Vol. 10, Issue 8, Pages: 1409-1420(2021)
- Affiliations：
  
  1.Materials, University of California, Santa Barbara, CA 93106, USA
  2.Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA
- Author bio：
  
  Caroline E. Reilly (cereilly@ucsb.edu)
- Funds：
- DOI：10.1038/s41377-021-00593-8
  CLC：
- Published：31 August 2021，
  
  Published Online：20 July 2021，
  
  Received：15 February 2021，
  
  Revised：21 June 2021，
  
  Accepted：06 July 2021
- Accepted：
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Reilly, C. E. et al. Metalorganic chemical vapor deposition of InN quantum dots and nanostructures. Light: Science & Applications, 10, 1409-1420 (2021).
DOI：

Reilly, C. E. et al. Metalorganic chemical vapor deposition of InN quantum dots and nanostructures. Light: Science & Applications, 10, 1409-1420 (2021). DOI： 10.1038/s41377-021-00593-8.

摘要

Abstract

Using one material system from the near infrared into the ultraviolet is an attractive goal

and may be achieved with (In

Ga)N. This Ⅲ-N material system

famous for enabling blue and white solid-state lighting

has been pushing towards longer wavelengths in more recent years. With a bandgap of about 0.7 eV

InN can emit light in the near infrared

potentially overlapping with the part of the electromagnetic spectrum currently dominated by Ⅲ-As and Ⅲ-P technology. As has been the case in these other Ⅲ–Ⅴ material systems

nanostructures such as quantum dots and quantum dashes provide additional benefits towards optoelectronic devices. In the case of InN

these nanostructures have been in the development stage for some time

with more recent developments allowing for InN quantum dots and dashes to be incorporated into larger device structures. This review will detail the current state of metalorganic chemical vapor deposition of InN nanostructures

focusing on how precursor choices

crystallographic orientation

and other growth parameters affect the deposition. The optical properties of InN nanostructures will also be assessed

with an eye towards the fabrication of optoelectronic devices such as light-emitting diodes

laser diodes

and photodetectors.

关键词

Keywords

references

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