Uncovering recent progress in nanostructured light-emitters for information and communication technologies

Frédéric Grillot; Jianan Duan; Bozhang Dong; Heming Huang

doi:10.1038/s41377-021-00598-3

Go to Nature Website

Your Location：

Home >

Browse articles >

Uncovering recent progress in nanostructured light-emitters for information and communication technologies

Reviews

- Uncovering recent progress in nanostructured light-emitters for information and communication technologies
- Light: Science & Applications Vol. 10, Issue 9, Pages: 1571-1587(2021)
- Affiliations：
  
  1.LTCI, Institut Polytechnique de Paris, Télécom Paris, 19 place Marguerite Perey, 91120, Palaiseau, France
  2.Center for High Technology Materials, University of New-Mexico, 1313 Goddard St SE, Albuquerque, NM, 87106, USA
  3.State Key Laboratory on Tunable Laser Technology, School of Electronic and Information Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
- Author bio：
  
  Frédéric Grillot (grillot@telecom-paris.fr)
- Funds：
- DOI：10.1038/s41377-021-00598-3
  CLC：
- Published：30 September 2021，
  
  Published Online：29 July 2021，
  
  Received：27 January 2021，
  
  Revised：22 June 2021，
  
  Accepted：13 July 2021
- Accepted：
Scan QR Code
Grillot F. et al. Uncovering recent progress in nanostructured light-emitters for information and communication technologies. Light: Science & Applications, 10, 1571-1587 (2021).
DOI：

Grillot F. et al. Uncovering recent progress in nanostructured light-emitters for information and communication technologies. Light: Science & Applications, 10, 1571-1587 (2021). DOI： 10.1038/s41377-021-00598-3.

摘要

Abstract

Semiconductor nanostructures with low dimensionality like quantum dots and quantum dashes are one of the best attractive and heuristic solutions for achieving high performance photonic devices. When one or more spatial dimensions of the nanocrystal approach the de Broglie wavelength

nanoscale size effects create a spatial quantization of carriers leading to a complete discretization of energy levels along with additional quantum phenomena like entangled-photon generation or squeezed states of light among others. This article reviews our recent findings and prospects on nanostructure based light emitters where active region is made with quantum-dot and quantum-dash nanostructures. Many applications ranging from silicon-based integrated technologies to quantum information systems rely on the utilization of such laser sources. Here

we link the material and fundamental properties with the device physics. For this purpose

spectral linewidth

polarization anisotropy

optical nonlinearities as well as microwave

dynamic and nonlinear properties are closely examined. The paper focuses on photonic devices grown on native substrates (InP and GaAs) as well as those heterogeneously and epitaxially grown on silicon substrate. This research pipelines the most exciting recent innovation developed around light emitters using nanostructures as gain media and highlights the importance of nanotechnologies on industry and society especially for shaping the future information and communication society.

关键词

Keywords

references

Chang, M. IoT opportunities in photonics.Laser Focus World52, ISSN 1043-8092 (2016)..

Yao, K., Unni, R.&Zheng, Y. B. Intelligent nanophotonics: merging photonics and artificial intelligence at the nanoscale.Nanophotonics8, 339–366 (2019)..

Mahdavinejad, M. S. et al. Machine learning for internet of things data analysis: a survey.Digital Commun. Netw.4, 161–175 (2018)..

Liu, X.&Deng, N. Emerging optical communication technologies for 5 G. In Optical Fiber Telecommunications Ⅶ (ed. Willner, A. E. ) (Amsterdam: Academic Press, 2020), 751–783.

Wang, J. W. et al. Integrated photonic quantum technologies.Nat. Photonics14, 273–284 (2020)..

Elshaari, A. W. et al. Hybrid integrated quantum photonic circuits.Nat. Photonics14, 285–298 (2020)..

Diamanti, E. et al. Practical challenges in quantum key distribution.npj Quantum Inf.2, 16025 (2016)..

Asghari, M.&Krishnamoorthy, A. V. Energy-efficient communication.Nat. Photonics5, 268–270 (2011)..

Vivien, L.&Pavesi, L. Handbook of silicon photonics. (Boca Raton: Taylor&Francis, 2013).

Zhou, Z. P., Yin, B.&Michel, J. On-chip light sources for silicon photonics.Light. : Sci. Appl.4, e358 (2015)..

Helkey, R. et al. High-performance photonic integrated circuits on silicon.IEEE J. Sel. Top. Quantum Electron.25, 8300215 (2019)..

Sun, C. et al. Single-chip microprocessor that communicates directly using light.Nature528, 534–538 (2015)..

Song, H. Z. The development of quantum emitters based on semiconductor quantum dots. in Quantum Dot Optoelectronic Devices (eds. Yu, P.&Wang, Z. M. ) (Cham: Springer, 2020), 83-106.

Michler, P. Quantum Dots for Quantum Information Technologies. (Cham:Springer, 2017).

Eisenstein, G.&Bimberg, D. Green Photonics and Electronics. (Cham: Springer International Publishing, 2017).

Yu, P.&Wang, Z. M.Quantum Dot Optoelectronic Devices. (Springer International Publishing, Cham, 2020).

Arakawa, Y.&Sakaki, H. Multidimensional quantum well laser and temperature dependence of its threshold current.Appl. Phys. Lett.40, 939–941 (1982)..

Kristaedter, N. et al. Low threshold, large To injection laser emission from (InGa)As quantum dots.Electron. Lett.30, 1416–1417 (1994)..

Mirin, R., Gossard, A.&Bowers, J. Room temperature lasing from InGaAs quantum dots.Electron. Lett.32, 1732–1734 (1996)..

Norman, J. C. et al.Perspect. : future quantum dot. photonic Integr. circuits APL Photonics3, 030901 (2018)..

Crowley, M. T. et al. GaAs-based quantum dot lasers.Semiconductors Semimet.86, 371–417 (2012)..

Liu, J. R. et al. InAs/InP quantum dot lasers and applications. Proceedings of 2018 IEEE International Semiconductor Laser Conference. Santa Fe, NM, USA: IEEE, 2018.

Septon, T. et al. Large linewidth reduction in semiconductor lasers based on atom-like gain material.Optica6, 1071–1077 (2019)..

Lelarge, F. et al. Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55 μm.IEEE J. Sel. Top. Quantum Electron.13, 111–124 (2007)..

Wan, Y. T. et al. Low-threshold continuous-wave operation of electrically pumped 1.55 μm InAs quantum dash microring lasers.ACS Photonics6, 279–285 (2019)..

Gong, M. et al. Electronic structure of self-assembled InAs/InP quantum dots: comparison with self-assembled InAs/GaAs quantum dots.Phys. Rev. B77, 045326 (2008)..

Shi, B. et al. Comparison of static and dynamic characteristics of 1550 nm quantum dash and quantum well lasers.Opt. Express28, 26823–26835 (2020)..

Dong, B. et al. Influence of the polarization anisotropy on the linewidth enhancement factor and reflection sensitivity of 1.55-μm InP-based InAs quantum dash lasers.Appl. Phys. Lett.115, 091101 (2019)..

Even, J. et al. From basic physical properties of InAs/InP quantum dots to state-of-the-art lasers for 1.55 μm optical communications: an overview. in Semiconductor Nanocrystals and Metal Nanoparticles (Boca Raton: CRC Press, 2016), 95-125.

Gilfert, C. et al. Influence of the As2/As4 growth modes on the formation of quantum dot-like InAs islands grown on InAlGaAs/InP (100).Appl. Phys. Lett.96, 191903 (2010)..

Chen, S. M. et al. Electrically pumped continuous-wave Ⅲ-Ⅴ quantum dot lasers on silicon.Nat. Photonics10, 307–311 (2016)..

Zhu, S. et al. 1.5 μm quantum-dot diode lasers directly grown on CMOS-standard (001) silicon.Appl. Phys. Lett.113, 221103 (2018)..

Norman, J. C. et al. Quantum dot lasers-History and future prospects.J. Vac. Sci. Technol. A39, 020802 (2021)..

Norman, J. C. et al. A review of high-performance quantum dot lasers on silicon.IEEE J. Quantum Electron.55, 2000511 (2019)..

Nishi, K. et al. Development of quantum dot lasers for data-com and silicon photonics applications.IEEE J. Sel. Top. Quantum Electron.23, 1901007 (2017)..

Norman, J. C. et al. The importance of p-doping for quantum dot laser on silicon performance.IEEE J. Quantum Electron.55, 2001111 (2019)..

Duan, J. N. et al. Effect of p-doping on the intensity noise of epitaxial quantum dot lasers on silicon.Opt. Lett.45, 4887–4890 (2020)..

Duan, J. et al. Semiconductor quantum dot lasers epitaxially grown on silicon with low linewidth enhancement factor.Appl. Phys. Lett.112, 251111 (2018)..

Grillot, F. et al. Physics and applications of quantum dot lasers for silicon photonics.Nanophotonics9, 1271–1286 (2020)..

Duan, J. N. et al. 1.3-μm reflection insensitive InAs/GaAs quantum dot lasers directly grown on silicon.IEEE Photonic Technol. Lett.31, 345–348 (2019)..

Matsui, Y. et al. Low-chirp isolator-free 65-GHz-bandwidth directly modulated lasers.Nat. Photonics15, 59–63 (2021)..

Huang, H. et al. Epitaxial quantum dot lasers on silicon with high thermal stability and strong resistance to optical feedback.APL Photonics5, 016103 (2020)..

Schires, K. et al. Dynamics of hybrid Ⅲ-Ⅴ silicon semiconductor lasers for integrated photonics.IEEE J. Sel. Top. Quantum Electron.22, 43–49 (2016)..

Zhang, Y. et al. Monolithic integration of broadband optical isolators for polarization-diverse silicon photonics.Optica6, 473–478 (2019)..

Maniloff, E., Gareau, S.&Moyer, M. 400G and beyond: coherent evolution to high-capacity inter data center links. Proceedings of 2019 Optical Fiber Communications Conference and Exhibition. San Diego, CA, USA: IEEE, 2019.

Kikuchi, K. Fundamentals of coherent optical fiber communications.J. Lightwave Technol.34, 157–179 (2016)..

Zhang, Z. W. et al. High-speed coherent optical communication with isolator-free heterogeneous Si/Ⅲ-Ⅴ lasers.J. Lightwave Technol.38, 6584–6590 (2020)..

Seimetz, M. Laser linewidth limitations for optical systems with high-order modulation employing feed forward digital carrier phase estimation. Proceedings of 2008 Conference on Optical Fiber Communication/National Fiber Optic Engineers Conference. San Diego, CA, USA: IEEE, 2008.

Newman, Z. L. et al. Architecture for the photonic integration of an optical atomic clock.Optica6, 680–685 (2019)..

Spencer, D. T. et al. An optical-frequency synthesizer using integrated photonics.Nature557, 81–85 (2018)..

Suh, M. G. et al. Microresonator soliton dual-comb spectroscopy.Science354, 600–603 (2016)..

Geng, J. H., Spiegelberg, C.&Jiang, S. B. Narrow linewidth fiber laser for 100-km optical frequency domain reflectometry.IEEE Photonics Technol. Lett.17, 1827–1829 (2005)..

Coldren, L. A., Corzine, S. W.&Mašanović, M. L. Diode Lasers and Photonic Integrated Circuits. 2nd edn. (Hoboken, NJ: John Wiley&Sons, 2012).

Duan, J. N. et al. Carrier-noise-enhanced relative intensity noise of quantum dot lasers.IEEE J. Quantum Electron.54, 2001407 (2018)..

Zhou, Y. G. et al. Optical noise of dual-state lasing quantum dot lasers.IEEE J. Quantum Electron.56, 2001207 (2020)..

Cox, C. H. et al. Limits on the performance of RF-over-fiber links and their impact on device design.IEEE Trans. Microw. Theory Tech.54, 906–920 (2006)..

Duan, J. et al. Narrow spectral linewidth in InAs/InP quantum dot distributed feedback lasers.Appl. Phys. Lett.112, 121102 (2018)..

Akiyama, T. et al. Nonlinear gain dynamics in quantum-dot optical amplifiers and its application to optical communication devices.IEEE J. Quantum Electron.37, 1059–1065 (2001)..

Ishikawa, H. Applications of quantum dot to optical devices.Semiconductors Semimet.60, 287–323 (1999)..

Huang, H. et al. Efficiency of four-wave mixing in injection-locked InAs/GaAs quantum-dot lasers.AIP Adv.6, 125105 (2016)..

Sadeev, T. et al. Highly efficient non-degenerate four-wave mixing under dual-mode injection in InP/InAs quantum-dash and quantum-dot lasers at 1.55 μm.Appl. Phys. Lett.107, 191111 (2015)..

Huang, H. et al. Non-degenerate four-wave mixing in an optically injection-locked InAs/InP quantum dot Fabry–Perot laser.Appl. Phys. Lett.106, 143501 (2015)..

Stern, B. et al. On-chip mode-division multiplexing switch.Optica2, 530–535 (2015)..

Cheng, Q. X. et al. Recent advances in optical technologies for data centers: a review.Optica5, 1354–1370 (2018)..

Dong, B. Z. et al. Frequency comb dynamics of a 1.3 μm hybrid-silicon quantum dot semiconductor laser with optical injection.Opt. Lett.44, 5755–5758 (2019)..

Liu, S. et al. 490 fs pulse generation from passively mode-locked single section quantum dot laser directly grown on on-axis GaP/Si.Electron. Lett.54, 432–433 (2018)..

Chow, W. W. et al. Multimode description of self-mode locking in a single-section quantum-dot laser.Opt. Express28, 5317–5330 (2020)..

Grillot, F. et al. Nonlinear-optical properties of epitaxial quantum dot lasers on silicon. Proceedings of the 28th International Symposium on Nanostructures: Physics and Technology. Virtual Event, 2020.

Osborne, S. et al. State filling in InAs quantum-dot laser structures.IEEE J. Quantum Electron.40, 1639–1645 (2004)..

Zhang, Z. K. et al. 30-GHz directly modulation DFB laser with narrow linewidth. Proceedings of the Asia Communications and Photonics Conference2015. Hong Kong, China: Optical Society of America, 2015.

Kelly, B. et al. Discrete mode laser diodes with very narrow linewidth emission.Electron. Lett.43, 1282–1284 (2007)..

Pourshab, N. et al. Analysis of narrow linewidth fiber laser using double subring resonators.J. Optical Soc. Am. B34, 2414–2420 (2017)..

Santis, C. T. et al. Quantum control of phase fluctuations in semiconductor lasers.Proc. Natl Acad. Sci. USA115, E7896–E7904 (2018)..

Gallet, A. et al. Dynamic and noise properties of high-Q hybrid laser. Proceedings of 2018 IEEE International Semiconductor Laser Conference. Santa Fe, NM, USA: IEEE, 2018.

Redlich, C. et al. Linewidth rebroadening in quantum dot semiconductor lasers.IEEE J. Sel. Top. Quantum Electron.23, 1901110 (2017)..

Ukhanov, A. A. et al. Orientation dependence of the optical properties in InAs quantum-dash lasers on InP.Appl. Phys. Lett.81, 981–983 (2002)..

Su, H.&Lester, L. F. Dynamic properties of quantum dot distributed feedback lasers: high speed, linewidth and chirp.J. Phys. D: Appl. Phys.38, 2112–2118 (2005)..

D'Ottavi, A. et al. Four-wave mixing in semiconductor optical amplifiers: a practical tool for wavelength conversion.IEEE J. Sel. Top. Quantum Electron.3, 522–528 (1997)..

Lu, Z. G. et al. Highly efficient non-degenerate four-wave mixing process in InAs/InGaAsP quantum dots.Electron. Lett.42, 1112–1114 (2006)..

Wang, C. et al. Nondegenerate four-wave mixing in a dual-mode injection-locked InAs/InP(100) nanostructure laser. IEEE Photonics.Journal6, 1500408 (2014)..

Yao, J. P. Microwave photonics.J. Lightwave Technol.27, 314–335 (2009)..

Seeds, A. J.&Williams, K. J. Microwave photonics.J. Lightwave Technol.24, 4628–4641 (2006)..

Qi, X. Q.&Liu, J. M. Photonic microwave applications of the dynamics of semiconductor lasers.IEEE J. Sel. Top. Quantum Electron.17, 1198–1211 (2011)..

Wang, C. et al. Optically injected InAs/GaAs quantum dot laser for tunable photonic microwave generation.Opt. Lett.41, 1153–1156 (2016)..

Simpson, T. B. et al. Tunable oscillations in optically injected semiconductor lasers with reduced sensitivity to perturbations.J. Lightwave Technol.32, 3749–3758 (2014)..

Huang, H. et al. Multimode optical feedback dynamics of InAs/GaAs quantum-dot lasers emitting on different lasing states.AIP Adv.6, 125114 (2016)..

Wang, C. et al. Thermally insensitive determination of the linewidth broadening factor in nanostructured semiconductor lasers using optical injection locking.Sci. Rep.6, 27825 (2016)..

Grillot, F. et al. 2.5-Gb/s transmission characteristics of 1.3-μm DFB lasers with external optical feedback.IEEE Photonics Technol. Lett.14, 101–103 (2002)..

Rosenband, T. et al. Frequency ratio of Al+ and Hg+ single-ion optical clocks; metrology at the 17th decimal place.Science319, 1808–1812 (2008)..

Coddington, I. et al. Rapid and precise absolute distance measurements at long range.Nat. Photonics3, 351–356 (2009)..

Wada, O. Femtosecond all-optical devices for ultrafast communication and signal processing.N. J. Phys.6, 183 (2004)..

de Lima, T. F. et al. Progress in neuromorphic photonics.Nanophotonics6, 577–599 (2017)..

Fortier, T. et al. 20 years of developments in optical frequency comb technology and applications.Commun. Phys.2, 153 (2019)..

Kurczveil, G. et al. On-chip hybrid silicon quantum dot comb laser with 14 error-free channels. Proceedings of 2018 IEEE International Semiconductor Laser Conference. Santa Fe, NM, USA: IEEE, 2018.

Liu, S. T. et al. High-channel-count 20 GHz passively mode-locked quantum dot laser directly grown on Si with 4.1 Tbit/s transmission capacity.Optica6, 128–134 (2019)..

Lin, C. Y. et al. Microwave characterization and stabilization of timing jitter in a quantum-dot passively mode-locked laser via external optical feedback.IEEE J. Sel. Top. Quantum Electron.17, 1311–1317 (2011)..

Verolet, T. et al. Mode locked laser phase noise reductionunder optical feedback for coherent DWDM communication.J. Lightwave Technol.38, 5708–5715 (2020)..

Dong, B. Z. et al. 1.3-µm passively mode-locked quantum dot lasers epitaxially grown on silicon: gain properties and optical feedback stabilization.J. Phys. : Photonics2, 045006 (2020)..

Kim, K. C. et al. Gain-dependent linewidth enhancement factor in the quantum dot structures.Nanotechnology21, 134010 (2010)..

Moody, G. et al. Chip-scale nonlinear photonics for quantum light generation. AVS Quantum.Science2, 041702 (2020)..

Views

Downloads

CSCD

Alert me when the article has been cited

Submit

Tools

Publicity Resources

No data

Related Author

No data

Related Institution

No data

⁰