Artificial visual perception neural system using a solution-processable MoS<sub>2</sub>-based in-memory light sensor

Dayanand Kumar; Lana Joharji; Hanrui Li; Ayman Rezk; Ammar Nayfeh; Nazek El-Atab

doi:10.1038/s41377-023-01166-7

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Artificial visual perception neural system using a solution-processable MoS₂-based in-memory light sensor

Original Articles

- Artificial visual perception neural system using a solution-processable MoS₂-based in-memory light sensor
- Light: Science & Applications Vol. 12, Issue 8, Pages: 1583-1594(2023)
- Affiliations：
  
  1.Smart, Advanced Memory Devices and Applications (SAMA) Laboratory, Electrical and Computer Engineering Program, Computer Electrical Mathematical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955, Kingdom of Saudi Arabia
  2.Department of Electrical Engineering and Computer Science, Khalifa University, Abu Dhabi 127788, United Arab Emirates
- Author bio：
  
  Nazek El-Atab (nazek.elatab@kaust.edu.sa)
- Funds：
- DOI：10.1038/s41377-023-01166-7
  CLC：
- Published：31 August 2023，
  
  Published Online：05 May 2023，
  
  Received：22 November 2022，
  
  Revised：08 April 2023，
  
  Accepted：19 April 2023
- Accepted：
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Kumar, D. et al. Artificial visual perception neural system using a solution-processable MoS₂-based in-memory light sensor. Light: Science & Applications, 12, 1583-1594 (2023).
DOI：

Kumar, D. et al. Artificial visual perception neural system using a solution-processable MoS₂-based in-memory light sensor. Light: Science & Applications, 12, 1583-1594 (2023). DOI： 10.1038/s41377-023-01166-7.

摘要

Abstract

Optoelectronic devices are advantageous in in-memory light sensing for visual information processing

recognition

and storage in an energy-efficient manner. Recently

in-memory light sensors have been proposed to improve the energy

area

and time efficiencies of neuromorphic computing systems. This study is primarily focused on the development of a single sensing-storage-processing node based on a two-terminal solution-processable MoS

metal–oxide–semiconductor (MOS) charge-trapping memory structure—the basic structure for charge-coupled devices (CCD)—and showing its suitability for in-memory light sensing and artificial visual perception. The memory window of the device increased from 2.8 V to more than 6 V when the device was irradiated with optical lights of different wavelengths during the program operation. Furthermore

the charge retention capability of the device at a high temperature (100 ℃) was enhanced from 36 to 64% when exposed to a light wavelength of 400 nm. The larger shift in the threshold voltage with an increasing operating voltage

confirmed that more charges were trapped at the Al

/MoS

interface and in the MoS

layer. A small convolutional neural network was proposed to measure the optical sensing and electrical programming abilities of the device. The array simulation received optical images transmitted using a blue light wavelength and performed inference computation to process and recognize the images with 91% accuracy. This study is a significant step toward the development of optoelectronic MOS memory devices for neuromorphic visual perception

adaptive parallel processing networks for in-memory light sensing

and smart CCD cameras with artificial visual perception capabilities.

关键词

Keywords

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Artificial visual perception neural system using a solution-processable MoS2-based in-memory light sensor

DOI：10.1038/s41377-023-01166-7

摘要

Abstract

关键词

Keywords

references

Artificial visual perception neural system using a solution-processable MoS₂-based in-memory light sensor