Laser manufacturing of spatial resolution approaching quantum limit

Xiao-Jie Wang; Hong-Hua Fang; Zhen-Ze Li; Dan Wang; Hong-Bo Sun

doi:10.1038/s41377-023-01354-5

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Laser manufacturing of spatial resolution approaching quantum limit

Original Articles

- Laser manufacturing of spatial resolution approaching quantum limit
- Light: Science & Applications Vol. 13, Issue 3, Pages: 421-428(2024)
- Affiliations：
  
  1.State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing 100084, China
  2.State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
- Author bio：
  
  Hong-Hua Fang (hfang@mail.tsinghua.edu.cn)
  Hong-Bo Sun (hbsun@tsinghua.edu.cn)
- Funds：
- DOI：10.1038/s41377-023-01354-5
  CLC：
- Received：02 August 2023，
  
  Revised：07 December 2023，
  
  Accepted：2023-12-08，
  
  Published Online：02 January 2024，
  
  Published：31 March 2024
- Accepted：
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Wang, X. J. et al. Laser manufacturing of spatial resolution approaching quantum limit. Light: Science & Applications, 13, 421-428 (2024).
DOI：

Wang, X. J. et al. Laser manufacturing of spatial resolution approaching quantum limit. Light: Science & Applications, 13, 421-428 (2024). DOI： 10.1038/s41377-023-01354-5.

摘要

Abstract

Atomic and close-to-atom scale manufacturing is a promising avenue toward single-photon emitters

single-electron transistors

single-atom memory

and quantum-bit devices for future communication

computation

and sensing applications. Laser manufacturing is outstanding to this end for ease of beam manipulation

batch production

and no requirement for photomasks. It is

however

suffering from optical diffraction limits. Herein

we report a spatial resolution improved to the quantum limit by exploiting a threshold tracing and lock-in method

whereby the two-order gap between atomic point defect complexes and optical diffraction limit is surpassed

and a feature size of <5 nm is realized. The underlying physics is that the uncertainty of local atom thermal motion dominates electron excitation

rather than the power density slope of the incident laser. We show that the colour centre yield in hexagonal boron nitride is transformed from stochastic to deterministic

and the emission from individual sites becomes polychromatic to monochromatic. As a result

single colour centres in the regular array are deterministically created with a unity yield and high positional accuracy

serving as a step forward for integrated quantum technological applications.

关键词

Keywords

references

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