High-power, electrically-driven continuous-wave 1.55-μm Si-based multi-quantum well lasers with a wide operating temperature range grown on wafer-scale InP-on-Si (100) heterogeneous substrate

Jialiang Sun; Jiajie Lin; Min Zhou; Jianjun Zhang; Huiyun Liu; Tiangui You; Xin Ou

doi:10.1038/s41377-024-01389-2

Go to Nature Website

Your Location：

Home >

Browse articles >

High-power, electrically-driven continuous-wave 1.55-μm Si-based multi-quantum well lasers with a wide operating temperature range grown on wafer-scale InP-on-Si (100) heterogeneous substrate

Original Articles

- High-power, electrically-driven continuous-wave 1.55-μm Si-based multi-quantum well lasers with a wide operating temperature range grown on wafer-scale InP-on-Si (100) heterogeneous substrate
- Light: Science & Applications Vol. 13, Issue 8, Pages: 1512-1523(2024)
- Affiliations：
  
  1.National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, CAS, Shanghai 200050, China
  2.Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049 Beijing, China
  3.College of Information Science and Engineering, Jiaxing University, Jiaxing 314001, China
  4.Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190 Beijing, China
  5.Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK
- Author bio：
  
  Jiajie Lin (jjlin@mail.sim.ac.cn)
  Tiangui You (t.you@mail.sim.ac.cn)
  Xin Ou (ouxin@mail.sim.ac.cn)
- Funds：
- DOI：10.1038/s41377-024-01389-2
  CLC：
- Published：31 August 2024，
  
  Published Online：11 March 2024，
  
  Received：17 September 2023，
  
  Revised：08 January 2024，
  
  Accepted：17 January 2024
- Accepted：
Scan QR Code
Sun, J. L. et al. High-power, electrically-driven continuous-wave 1.55-μm Si-based multi-quantum well lasers with a wide operating temperature range grown on wafer-scale InP-on-Si (100) heterogeneous substrate. Light: Science & Applications, 13, 1512-1523 (2024).
DOI：

Sun, J. L. et al. High-power, electrically-driven continuous-wave 1.55-μm Si-based multi-quantum well lasers with a wide operating temperature range grown on wafer-scale InP-on-Si (100) heterogeneous substrate. Light: Science & Applications, 13, 1512-1523 (2024). DOI： 10.1038/s41377-024-01389-2.

摘要

Abstract

A reliable

efficient and electrically-pumped Si-based laser is considered as the main challenge to achieve the integration of all key building blocks with silicon photonics. Despite the impressive advances that have been made in developing 1.3-μm Si-based quantum dot (QD) lasers

extending the wavelength window to the widely used 1.55-μm telecommunication region remains difficult. In this study

we develop a novel photonic integration method of epitaxial growth of Ⅲ-Ⅴ on a wafer-scale InP-on-Si (100) (InPOS) heterogeneous substrate fabricated by the ion-cutting technique to realize integrated lasers on Si substrate. This ion-cutting plus epitaxial growth approach decouples the correlated root causes of many detrimental dislocations during heteroepitaxial growth

namely lattice and domain mismatches. Using this approach

we achieved state-of-the-art performance of the electrically-pumped

continuous-wave (CW) 1.55-µm Si-based laser with a room-temperature threshold current density of 0.65 kA/cm

−2

and output power exceeding 155 mW per facet without facet coating in CW mode. CW lasing at 120 ℃ and pulsed lasing at over 130 ℃ we

re achieved. This generic approach is also applied to other material systems to provide better performance and more functionalities for photonics and microelectronics.

关键词

Keywords

references

Chen, S. M. et al. Electrically pumped continuous-wave Ⅲ–Ⅴ quantum dot lasers on silicon.Nat. Photonics10, 307–311 (2016)..

Han, Y. et al. Recent advances in light sources on silicon.Adv. Opt. Photonics14, 404–454 (2022)..

Liang, D.&Bowers, J. E. Recent progress in heterogeneous Ⅲ-Ⅴ-on-silicon photonic integration.Light Adv. Manuf.2, 59–83 (2021)..

Zhou, Z. et al. Prospects and applications of on-chip lasers.eLight3, 1 (2023)..

Lee, H. et al. Chiral exceptional point and coherent suppression of backscattering in silicon microring with low loss Mie scatterer.eLight3, 20 (2023)..

Liang, D.&Bowers, J. E. Recent progress in lasers on silicon.Nat. Photonics4, 511–517 (2010)..

Liao, M. Y. et al. Ⅲ–Ⅴ quantum-dot lasers monolithically grown on silicon.Semiconductor Sci. Technol.33, 123002 (2018)..

Wan, Y. T. et al. 1.3 μm submilliamp threshold quantum dot micro-lasers on Si.Optica4, 940–944 (2017)..

Jung, D. et al. Impact of threading dislocation density on the lifetime of InAs quantum dot lasers on Si.Appl. Phys. Lett.112, 153507 (2018)..

Shang, C. et al. High-temperature reliable quantum-dot lasers on Si with misfit and threading dislocation filters.Optica8, 749–754 (2021)..

Isaac, B. J. et al. Indium phosphide photonic integrated circuit transceiver for FMCW LiDAR.IEEE J. Sel. Top. Quantum Electron.25, 8000107 (2019)..

Feng, Q. et al. O-band and C/L-band Ⅲ-Ⅴ quantum dot lasers monolithically grown on Ge and Si substrate.Appl. Sci.9, 385 (2019)..

Arafin, S.&Coldren, L. A. Advanced InP photonic integrated circuits for communication and sensing.IEEE J. Sel. Top. Quantum Electron.24, 6100612 (2018)..

Sugo, M. et al. Stable cw operation at room temperature of a 1.5‐μm wavelength multiple quantum well laser on a Si substrate.Appl. Phys. Lett.60, 472–473 (1992)..

Yamada, T. et al. 7000 h continuous wave operation of multiple quantum well laser on Si at 50 ℃.Appl. Phys. Lett.70, 1614–1615 (1997)..

Zhang, Y. J. et al. Inclined emitting slotted single-mode laser with 1.7° vertical divergence angle for PIC applications.Opt. Lett.43, 86–89 (2018)..

Liu, A. Y. et al. Quantum dot lasers for silicon photonics.Photonics Res.3, B1–B9 (2015)..

Zhu, S. et al. Room-temperature electrically-pumped 1.5 μm InGaAs/InAlGaAs laser monolithically grown on on-axis (001) Si.Opt. Express26, 14514–14523 (2018)..

Shi, B. et al. Continuous-wave electrically pumped 1550 nm lasers epitaxially grown on on-axis (001) silicon.Optica6, 1507–1514 (2019)..

Shi, B. et al. Lasing characteristics and reliability of 1550 nm laser diodes monolithically grown on silicon.Phys. Status Solidi (A)218, 2000374 (2021)..

Xue, Y. et al. 1.55 µm electrically pumped continuous wave lasing of quantum dash lasers grown on silicon.Opt. Express28, 18172–18179 (2020)..

Zhu, S. et al. 1.5μm quantum-dot diode lasers directly grown on CMOS-standard (001) silicon.Appl. Phys. Lett.113, 221103 (2018)..

Zhang, Y. et al. High-speed electro-optic modulation in topological interface states of a one-dimensional lattice.Light Sci. Appl.12, 206 (2023)..

Sun, W. G. et al. Low‐Energy UV Ultrafast Laser Controlled Lift‐Off for High‐Quality Flexible GaN‐Based Device.Adv. Funct. Mater.32, 2111920 (2022)..

Ren, J. et al. Giant and light modifiable third-order optical nonlinearity in a free-standing h-BN film.Opto Electron. Sci.1, 210013 (2022)..

Lin, J. J. et al. Efficient ion-slicing of InP thin film for Si-based hetero-integration.Nanotechnology29, 504002 (2018)..

Shi, B. et al. InAlGaAs/InAlAs MQWs on Si Substrate.IEEE Photonics Technol. Lett.27, 748–751 (2015)..

Shi, B.&Klamkin, J. Defect engineering for high quality InP epitaxially grown on on-axis (001) Si.J. Appl. Phys.127, 033102 (2020)..

Pan, S. J. et al. Recent progress in epitaxial growth of Ⅲ–Ⅴ quantum-dot lasers on silicon substrate.J. Semiconductors40, 101302 (2019)..

Tournié, E. et al. Metamorphic Ⅲ–Ⅴ semiconductor lasers grown on silicon.MRS Bull.41, 218–223 (2016)..

Park, J. S. et al. Heteroepitaxial growth of Ⅲ–Ⅴ semiconductors on silicon.Crystals10, 1163 (2020)..

Cao, V. et al. Recent progress of quantum dot lasers monolithically integrated on Si platform.Front. Phys.10, 839953 (2022)..

Maycock, P. D. Thermal conductivity of silicon, germanium, Ⅲ–Ⅴ compounds and Ⅲ–Ⅴ alloys.Electronics10, 161–168 (1967)..

Liu, A. Y. et al. Electrically pumped continuous-wave 1.3 μm quantum-dot lasers epitaxially grown on on-axis (001) GaP/Si.Opt. Lett.42, 338–341 (2017)..

Pan, J. W.&Chyi, J. I. Theoretical study of the temperature dependence of 1.3 μm AlGaInAs-InP multiple-quantum-well lasers.IEEE J. Quantum Electron.32, 2133–2138 (1996)..

Higashi, T. et al. Experimental analysis of temperature dependence in 1.3 μm AlGaInAs-InP strained MQW lasers.IEEE J. Sel. Top. Quantum Electron.5, 413–419 (1999)..

Hu, Y. T. et al. Ⅲ/Ⅴ-on-Si MQW lasers by using a novel photonic integration method of regrowth on a bonding template.Light Sci. Appl.8, 93 (2019)..

Higashi, T., Yamamoto, T., Ogita, S.&Kobayashi, M. Experimental analysis of temperature dependence of oscillation wavelength in quantum-well FP semiconductor lasers.IEEE J. Quantum Electron.34, 1680–1689 (1998)..

Okamoto, K., Kashiwagi, J., Tanaka, T.&Kubota, M. Nonpolar m-plane InGaN multiple quantum well laser diodes with a lasing wavelength of 499.8 nm.Appl. Phys. Lett.94, 071105 (2009)..

Shang, C. et al. Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers.Light Sci. Appl.11, 299 (2022)..

Shi, B. et al. Comparison of static and dynamic characteristics of 1550 nm quantum dash and quantum well lasers.Opt. Express28, 26823–26835 (2020)..

Luo, W. et al. Comparison of growth structures for continuous-wave electrically pumped 1.55 μm quantum dash lasers grown on (001) Si.Photonics Res.8, 1888–1894 (2020)..

Loi, R. et al. Transfer printing of AlGaInAs/InP etched facet lasers to Si substrates.IEEE Photonics J.8, 1–10 (2016)..

Lin, J. J. et al. Wafer-scale heterogeneous integration InP on trenched Si with a bubble-free interface.APL Mater.8, 051110 (2020)..

Tachikawa, M., Yamada, T., Sasaki, T., Mori, H.&Kadota, Y. Laser-diode-quality InP/Si grown by hydride vapor phase epitaxy.Jpn. J. Appl. Phys.34, L657 (1995)..

Castellano, A. et al. Room-temperature continuous-wave operation in the telecom wavelength range of GaSb-based lasers monolithically grown on Si.APL Photonics2, 061301 (2017)..

Cerutti, L.&Rodriguez, J. B.&Tournié, E. GaSb-Based Laser, Monolithically Grown on Silicon Substrate, Emitting at 1.55 μm at Room Temperature.IEEE Photonics Technol. Lett.22, 553–555 (2010)..

Kim, H. et al. Electrically injected 1.64 µm emitting In0.65Ga0.35As 3-QW laser diodes grown on mismatched substrates by MOVPE.Opt. Express27, 33205–33216 (2019)..

Views

Downloads

CSCD

Alert me when the article has been cited

Submit

Tools

Publicity Resources

No data

Related Author

No data

Related Institution

No data

⁰