High-power, electrically-driven continuous-wave 1.55-μm Si-based multi-quantum well lasers with a wide operating temperature range grown on wafer-scale InP-on-Si (100) heterogeneous substrate

Jialiang Sun; Jiajie Lin; Min Zhou; Jianjun Zhang; Huiyun Liu; Tiangui You; Xin Ou

doi:10.1038/s41377-024-01389-2

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High-power, electrically-driven continuous-wave 1.55-μm Si-based multi-quantum well lasers with a wide operating temperature range grown on wafer-scale InP-on-Si (100) heterogeneous substrate

Original Articles

- High-power, electrically-driven continuous-wave 1.55-μm Si-based multi-quantum well lasers with a wide operating temperature range grown on wafer-scale InP-on-Si (100) heterogeneous substrate
- Light: Science & Applications Vol. 13, Issue 8, Pages: 1512-1523(2024)
- Affiliations：
  
  1.National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, CAS, Shanghai 200050, China
  2.Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049 Beijing, China
  3.College of Information Science and Engineering, Jiaxing University, Jiaxing 314001, China
  4.Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190 Beijing, China
  5.Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK
- Author bio：
  
  Jiajie Lin (jjlin@mail.sim.ac.cn)
  Tiangui You (t.you@mail.sim.ac.cn)
  Xin Ou (ouxin@mail.sim.ac.cn)
- Funds：
- DOI：10.1038/s41377-024-01389-2
  CLC：
- Received：17 September 2023，
  
  Revised：08 January 2024，
  
  Accepted：2024-01-17，
  
  Published Online：11 March 2024，
  
  Published：31 August 2024
- Accepted：
Scan QR Code
Sun, J. L. et al. High-power, electrically-driven continuous-wave 1.55-μm Si-based multi-quantum well lasers with a wide operating temperature range grown on wafer-scale InP-on-Si (100) heterogeneous substrate. Light: Science & Applications, 13, 1512-1523 (2024).
DOI：

Sun, J. L. et al. High-power, electrically-driven continuous-wave 1.55-μm Si-based multi-quantum well lasers with a wide operating temperature range grown on wafer-scale InP-on-Si (100) heterogeneous substrate. Light: Science & Applications, 13, 1512-1523 (2024). DOI： 10.1038/s41377-024-01389-2.

摘要

Abstract

A reliable

efficient and electrically-pumped Si-based laser is considered as the main challenge to achieve the integration of all key building blocks with silicon photonics. Despite the impressive advances that have been made in developing 1.3-μm Si-based quantum dot (QD) lasers

extending the wavelength window to the widely used 1.55-μm telecommunication region remains difficult. In this study

we develop a novel photonic integration method of epitaxial growth of Ⅲ-Ⅴ on a wafer-scale InP-on-Si (100) (InPOS) heterogeneous substrate fabricated by the ion-cutting technique to realize integrated lasers on Si substrate. This ion-cutting plus epitaxial growth approach decouples the correlated root causes of many detrimental dislocations during heteroepitaxial growth

namely lattice and domain mismatches. Using this approach

we achieved state-of-the-art performance of the electrically-pumped

continuous-wave (CW) 1.55-µm Si-based laser with a room-temperature threshold current density of 0.65 kA/cm

−2

and output power exceeding 155 mW per facet without facet coating in CW mode. CW lasing at 120 ℃ and pulsed lasing at over 130 ℃ we

re achieved. This generic approach is also applied to other material systems to provide better performance and more functionalities for photonics and microelectronics.

关键词

Keywords

references

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