Nonvolatile and reconfigurable two-terminal electro-optic duplex memristor based on Ⅲ-nitride semiconductors

Zhiwei Xie; Ke Jiang; Shanli Zhang; Jianwei Ben; Mingrui Liu; Shunpeng Lv; Yang Chen; Yuping Jia; Xiaojuan Sun; Dabing Li

doi:10.1038/s41377-024-01422-4

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Nonvolatile and reconfigurable two-terminal electro-optic duplex memristor based on Ⅲ-nitride semiconductors

Original Articles

- Nonvolatile and reconfigurable two-terminal electro-optic duplex memristor based on Ⅲ-nitride semiconductors
- Light: Science & Applications Vol. 13, Issue 4, Pages: 706-716(2024)
- Affiliations：
  
  1.State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Dongnanhu Road No. 3888, Changchun 130033, China
  2.Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Yuquan Road No. 19, 100049 Beijing, China
- Author bio：
  
  Ke Jiang (jiangke@ciomp.ac.cn)
  Xiaojuan Sun (sunxj@ciomp.ac.cn)
  Dabing Li (lidb@ciomp.ac.cn)
- Funds：
- DOI：10.1038/s41377-024-01422-4
  CLC：
- Received：02 January 2024，
  
  Revised：11 March 2024，
  
  Accepted：2024-03-11，
  
  Published Online：29 March 2024，
  
  Published：30 April 2024
- Accepted：
Scan QR Code
Xie, Z. W. et al. Nonvolatile and reconfigurable two-terminal electro-optic duplex memristor based on Ⅲ-nitride semiconductors. Light: Science & Applications, 13, 706-716 (2024).
DOI：

Xie, Z. W. et al. Nonvolatile and reconfigurable two-terminal electro-optic duplex memristor based on Ⅲ-nitride semiconductors. Light: Science & Applications, 13, 706-716 (2024). DOI： 10.1038/s41377-024-01422-4.

摘要

Abstract

With the fast development of artificial intelligence (AI)

Internet of things (IOT)

etc

there is an urgent need for the technology that can efficiently recognize

store and process a staggering amount of information. The AlScN material has unique advantages including immense remnant polarization

superior temperature stability and good lattice-match to other Ⅲ-nitrides

making it easy to integrate with the existing advanced Ⅲ-nitrides material and device technologies. However

due to the large band-gap

strong coercive field

and low photo-generated carrier generation and separation efficiency

it is difficult for AlScN itself to accumulate enough photo-generated carriers at the surface/interface to induce polarization inversion

limiting its application in in-memory sensing and computing. In this work

an electro-optic duplex memristor on a GaN/AlScN hetero-structure based Schottky diode has been realized. This two-terminal memristor shows good electrical and opto-electrical nonvolatility and reconfigurability. For both electrical and opto-electrical modes

the current on/off ratio can reach the magnitude of 10

and the resistance states can be effectively reset

written and long-termly stored. Based on this device

the "IMP" truth table and the logic "False" can be successfully reproduced

indicating the huge potential of the device in the field of in-memory sensing and computing.

关键词

Keywords

references

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