Spatially selective p-type doping for constructing lateral WS<sub>2</sub> p-n homojunction via low-energy nitrogen ion implantation

Yufan Kang; Yongfeng Pei; Dong He; Hang Xu; Mingjun Ma; Jialu Yan; Changzhong Jiang; Wenqing Li; Xiangheng Xiao

doi:10.1038/s41377-024-01477-3

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Spatially selective p-type doping for constructing lateral WS₂ p-n homojunction via low-energy nitrogen ion implantation

Original Articles

- Spatially selective p-type doping for constructing lateral WS₂ p-n homojunction via low-energy nitrogen ion implantation
- Light: Science & Applications Vol. 13, Issue 6, Pages: 1159-1169(2024)
- Affiliations：
  
  School of Physics and Technology, Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, China
- Author bio：
  
  Wenqing Li (wenqing_li@whu.edu.cn)
  Xiangheng Xiao (xxh@whu.edu.cn)
- Funds：
- DOI：10.1038/s41377-024-01477-3
  CLC：
- Received：09 October 2023，
  
  Revised：2024-04-13，
  
  Accepted：10 May 2024，
  
  Published Online：30 May 2024，
  
  Published：30 June 2024
- Accepted：
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Kang, Y. F. et al. Spatially selective p-type doping for constructing lateral WS₂ p-n homojunction via low-energy nitrogen ion implantation., Light: Science & Applications, 13, 1159-1169 (2024).
DOI：

Kang, Y. F. et al. Spatially selective p-type doping for constructing lateral WS₂ p-n homojunction via low-energy nitrogen ion implantation., Light: Science & Applications, 13, 1159-1169 (2024). DOI： 10.1038/s41377-024-01477-3.

摘要

Abstract

The construction of lateral p-n junctions is very important and challenging in two-dimensional (2D) semiconductor manufacturing process. Previous researches have demonstrated that vertical p-n junction can be prepared simply by vertical stacking of 2D materials. However

interface pollution and large area scalability are challenges that are difficult to overcome with vertical stacking technology. Constructing 2D lateral p-n homojunction is an effective strategy to address these issues. Spatially selective p-type doping of 2D semiconductors is expected to construct lateral p-n homojunction. In this work

we have developed a low-energy ion implantation system that reduces the implanted energy to 300 eV. Low-energy implantation can form a shallow implantation depth

which is more suitable for m

odulating the electrical and optical properties of 2D materials. Hence

we utilize low-energy ion implantation to directly dope nitrogen ions into few-layer WS

and successfully realize a precise regulation for WS

with its conductivity type transforming from n-type to bipolar or even p-type conduction. Furthermore

the universality of this method is demonstrated by extending it to other 2D semiconductors

including WSe

SnS

and MoS

. Based on this method

a lateral WS

p-n homojunction is fabricated

which exhibits significant rectification characteristics. A photodetector based on p-n junction with photovoltaic effect is also prepared

and the open circuit voltage can reach to 0.39 V. This work provides an effective way for controllable doping of 2D semiconductors.

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references

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Spatially selective p-type doping for constructing lateral WS2 p-n homojunction via low-energy nitrogen ion implantation

DOI：10.1038/s41377-024-01477-3

摘要

Abstract

关键词

Keywords

references

Spatially selective p-type doping for constructing lateral WS₂ p-n homojunction via low-energy nitrogen ion implantation