1.Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
2.Shandong Technology Center of Nanodevices and Integration, School of Microelectronics, Shandong University, Jinan 250100, China
3.Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an 710072, China
Juqing Liu (iamjqliu@njtech.edu.cn)
Published:30 September 2024,
Published Online:23 July 2024,
Received:18 February 2024,
Revised:11 June 2024,
Accepted:01 July 2024
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Zhou, Z. et al. A memristive-photoconductive transduction methodology for accurately nondestructive memory readout. Light: Science & Applications, 13, 1801-1808 (2024).
Zhou, Z. et al. A memristive-photoconductive transduction methodology for accurately nondestructive memory readout. Light: Science & Applications, 13, 1801-1808 (2024). DOI: 10.1038/s41377-024-01519-w.
Crossbar resistive memory architectures enable high-capacity storage and neuromorphic computing
accurate retrieval of the stored information is a prerequisite during read operation. However
conventional electrical readout normally suffer from complicated process
inaccurate and destructive reading due to crosstalk effect from sneak path current. Here we report a memristive-photoconductive transduction (MPT) methodology for precise and nondestructive readout in a memristive crossbar array. The individual devices present dynamic filament form/fuse for resistance modulation under electric stimulation
which leads to photogenerated carrier transport for tunable photoconductive response under subsequently light pulse stimuli. This coherent signal transduction can be used to directly detect the memorized on/off states stored in each cell
and a prototype 4 * 4 crossbar memories has been constructed and validated for the fidelity of crosstalk-free readout in recall process.
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