Deep-trap ultraviolet persistent phosphor for advanced optical storage application in bright environments

Xulong Lv; Yanjie Liang; Yi Zhang; Dongxun Chen; Xihui Shan; Xiao-Jun Wang

doi:10.1038/s41377-024-01533-y

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Deep-trap ultraviolet persistent phosphor for advanced optical storage application in bright environments

Original Articles

- Deep-trap ultraviolet persistent phosphor for advanced optical storage application in bright environments
- Light: Science & Applications Vol. 13, Issue 11, Pages: 2634-2648(2024)
- Affiliations：
  
  1.Key Laboratory for Liquid-Solid Structure Evolution and Processing of Materials, Shandong University, Jinan 250061, China
  2.Department of Physics, Georgia Southern University, Statesboro, GA 30460, USA
- Author bio：
  
  Yanjie Liang (yanjie.liang@sdu.edu.cn)
  Xiao-Jun Wang (xwang@georgiasouthern.edu)
- Funds：
- DOI：10.1038/s41377-024-01533-y
  CLC：
- Published：30 November 2024，
  
  Published Online：14 September 2024，
  
  Received：12 March 2024，
  
  Revised：11 July 2024，
  
  Accepted：15 July 2024
- Accepted：
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Lv, X. L. et al. Deep-trap ultraviolet persistent phosphor for advanced optical storage application in bright environments. Light: Science & Applications, 13, 2634-2648 (2024).
DOI：

Lv, X. L. et al. Deep-trap ultraviolet persistent phosphor for advanced optical storage application in bright environments. Light: Science & Applications, 13, 2634-2648 (2024). DOI： 10.1038/s41377-024-01533-y.

摘要

Abstract

Extensive research has been conducted on visible-light and longer-wavelength infrared-light storage phosphors

which are utilized as promising rewritable memory media for optical information storage applications in dark environments. However

storage phosphors emitting in the deep ultraviolet spectral region (200–300 nm) are relatively lacking. Here

we report an appealing deep-trap ultraviolet storage phosphor

ScBO

:Bi

which exhibits an ultra-narrowband light emission centered at 299 nm with a full width at half maximum (FWHM) of 0.21

eV and excellent X-ray energy storage capabilities. When persistently stimulated by longer-wavelength white/NIR light or heated at elevated temperatures

ScBO

:Bi

phosphor exhibits intense and long-lasting ultraviolet luminescence due to the interplay between defect levels and external stimulus

while the natural decay in the dark at room temperature is extremely weak after X-ray irradiation. The impact of the spectral distribution and illuminance of ambient light and ambient temperature on ultraviolet light emission has been studied by comprehensive experimental and theoretical investigations

which elucidate that both O vacancy and Sc interstitial serve as deep electron traps for enhanced and prolonged ultraviolet luminescence upon continuous optical or thermal stimulation. Based on the unique spectral features and trap distribution in ScBO

:Bi

phosphor

controllable optical information read-out is demonstrated via external light or heat manipulation

highlighting the great potential of ScBO

:Bi

phosphor for advanced optical storage application in bright environments.

关键词

Keywords

references

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