Thin film ferroelectric photonic-electronic memory

Gong Zhang; Yue Chen; Zijie Zheng; Rui Shao; Jiuren Zhou; Zuopu Zhou; Leming Jiao; Jishen Zhang; Haibo Wang; Qiwen Kong; Chen Sun; Kai Ni; Jixuan Wu; Jiezhi Chen; Xiao Gong

doi:10.1038/s41377-024-01555-6

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Thin film ferroelectric photonic-electronic memory

Original Articles

- Thin film ferroelectric photonic-electronic memory
- Light: Science & Applications Vol. 13, Issue 10, Pages: 2251-2262(2024)
- Affiliations：
  
  1.Department of Electrical and Computer Engineering, National University of Singapore, Singapore 119077, Singapore
  2.Department of Microelectronic Engineering, Rochester Institute of Technology, Rochester, NY 14623, USA
  3.School of Information Science and Engineering, Shandong University, Jinan 250100, China
- Author bio：
  
  Xiao Gong (elegong@nus.edu.sg)
- Funds：
- DOI：10.1038/s41377-024-01555-6
  CLC：
- Received：04 March 2024，
  
  Revised：16 July 2024，
  
  Accepted：2024-07-25，
  
  Published Online：23 August 2024，
  
  Published：31 October 2024
- Accepted：
Scan QR Code
Zhang, G. et al. Thin film ferroelectric photonic-electronic memory. Light: Science & Applications, 13, 2251-2262 (2024).
DOI：

Zhang, G. et al. Thin film ferroelectric photonic-electronic memory. Light: Science & Applications, 13, 2251-2262 (2024). DOI： 10.1038/s41377-024-01555-6.

摘要

Abstract

To reduce system complexity and bridge the interface between electronic and photonic circuits

there is a high demand for a non-volatile memory that can be accessed both electrically and optically. However

practical solutions are still lacking when considering the potential for large-scale complementary metal-oxide semiconductor compatible integration. Here

we present an experimental demonstration of a non-volatile photonic-electronic memory based on a 3-dimensional monolithic integrated ferroelectric-silicon ring resonator. We successfully demonstrate programming and erasing the memory using both electrical and optical methods

assisted by optical-to-electrical-to-optical conversion. The memory cell exhibits a high optical extinction ratio of 6.6 dB at a low working voltage of 5 V and an endurance of 4 × 10

cycles. Furthermore

the multi-level storage capability is analyzed in detail

revealing stable performance with a raw bit-error-rate smaller than 5.9 × 10

−2

. This ground-breaking work could be a key technology enabler for future hybrid electronic-photonic systems

targeting a wide range of applications such as photonic interconnect

high-speed data communication

and neuromorphic computing.

关键词

Keywords

references

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