1.Imaging Physics Department, Applied Science Faculty, Delft University of Technology, Lorentzweg 1, Delft 2628 CJ, The Netherlands
2.Nanophotonics, Debye Institute for Nanomaterials Science and Center for Extreme Matter and Emergent Phenomena, Utrecht University, P.O. Box 80000, Utrecht 3508 TA, The Netherlands
3.Research Department, ASML Netherlands B.V, De Run 6501, Veldhoven 5504 DR, The Netherlands
Yifeng Shao (Y.Shao@tudelft.nl)
Published:31 October 2024,
Published Online:19 August 2024,
Received:12 December 2023,
Revised:29 June 2024,
Accepted:27 July 2024
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Shao, Y. F. et al. Wavelength-multiplexed multi-mode EUV reflection ptychography based on automatic differentiation. Light: Science & Applications, 13, 2156-2167 (2024).
Shao, Y. F. et al. Wavelength-multiplexed multi-mode EUV reflection ptychography based on automatic differentiation. Light: Science & Applications, 13, 2156-2167 (2024). DOI: 10.1038/s41377-024-01558-3.
Ptychographic extreme ultraviolet (EUV) diffractive imaging has emerged as a promising candidate for the next generationmetrology solutions in the semiconductor industry
as it can image wafer samples in reflection geometry at the nanoscale. This technique has surged attention recently
owing to the significant progress in high-harmonic generation (HHG) EUV sources and advancements in both hardware and software for computation. In this study
a novel algorithm is introduced and tested
which enables wavelength-multiplexed reconstruction that enhances the measurement throughput and introduces data diversity
allowing the accurate characterisation of sample structures. To tackle the inherent instabilities of the HHG source
a modal approach was adopted
which represents the cross-density function of the illumination by a series of mutually incoherent and independent spatial modes. The proposed algorithm was implemented on a mainstream machine learning platform
which leverages automatic differentiation to manage the drastic growth in model complexity and expedites the computation using GPU acceleration. By optimising over 200 million parameters
we demonstrate the algorithm's capacity to accommodate experimental uncertainties and achieve a resolution approaching the diffraction limit in reflection geometry. The reconstruction of wafer samples with 20-nm high patterned gold structures on a silicon substrate highlights our ability to handle complex physical interrelations involving a multitude of parameters. These results establish ptychography as an efficient and accurate metrology tool.
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