Ultra-low loss silicon nitride becomes even cooler

Dawn T. H. Tan; Xavier X. Chia

doi:10.1038/s41377-024-01576-1

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Ultra-low loss silicon nitride becomes even cooler

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- Ultra-low loss silicon nitride becomes even cooler
- Light: Science & Applications Vol. 13, Issue 10, Pages: 1997-1999(2024)
- Affiliations：
  
  1.Photonics Devices and Systems Group, Singapore University of Technology and Design, Singapore, Singapore
  2.Institute of Microelectronics, Agency for Science Technology and Research (A*STAR), Singapore, Singapore
- Author bio：
  
  Dawn T. H. Tan (dawn_tan@sutd.edu.sg)
- Funds：
- DOI：10.1038/s41377-024-01576-1
  CLC：
- Published：31 October 2024，
  
  Published Online：05 September 2024，
- Accepted：
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Tan, D. T. H. & Chia, X. X. Ultra-low loss silicon nitride becomes even cooler. Light: Science & Applications, 13, 1997-1999 (2024).
DOI：

Tan, D. T. H. & Chia, X. X. Ultra-low loss silicon nitride becomes even cooler. Light: Science & Applications, 13, 1997-1999 (2024). DOI： 10.1038/s41377-024-01576-1.

摘要

Abstract

Ultra-low loss silicon nitride realized using deuterated precursors and low thermal budgets well within backend-of-line CMOS processing may accelerate widespread proliferation of their use.

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references

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