Highly DUV to NIR-Ⅱ responsive broadband quantum dots heterojunction photodetectors by integrating quantum cutting luminescent concentrators

Nan Ding; Wen Xu; Hailong Liu; Yuhan Jing; Zewen Wang; Yanan Ji; Jinlei Wu; Long Shao; Ge Zhu; Bin Dong

doi:10.1038/s41377-024-01604-0

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Highly DUV to NIR-Ⅱ responsive broadband quantum dots heterojunction photodetectors by integrating quantum cutting luminescent concentrators

Original Articles

- Highly DUV to NIR-Ⅱ responsive broadband quantum dots heterojunction photodetectors by integrating quantum cutting luminescent concentrators
- Light: Science & Applications Vol. 13, Issue 12, Pages: 3076-3089(2024)
- Affiliations：
  
  Key Laboratory of New Energy and Rare Earth Resource Utilization of State Ethnic Affairs Commission, School of Physics and Materials Engineering, Dalian Minzu University, 18 Liaohe West Road, Dalian 116600, China
- Author bio：
  
  Wen Xu (xuwen@dlnu.edu.cn)
  Ge Zhu (zhuge@dlnu.edu.cn)
  Bin Dong (dong@dlnu.edu.cn)
- Funds：
- DOI：10.1038/s41377-024-01604-0
  CLC：
- Published：31 December 2024，
  
  Published Online：15 October 2024，
  
  Received：19 April 2024，
  
  Revised：30 July 2024，
  
  Accepted：23 August 2024
- Accepted：
Scan QR Code
Ding, N. et al. Highly DUV to NIR-Ⅱ responsive broadband quantum dots heterojunction photodetectors by integrating quantum cutting luminescent concentrators. Light: Science & Applications, 13, 3076-3089 (2024).
DOI：

Ding, N. et al. Highly DUV to NIR-Ⅱ responsive broadband quantum dots heterojunction photodetectors by integrating quantum cutting luminescent concentrators. Light: Science & Applications, 13, 3076-3089 (2024). DOI： 10.1038/s41377-024-01604-0.

摘要

Abstract

Low-cost

high-performance

and uncooled broadband photodetectors (PDs) have potential applications in optical communication etc.

but it still remains a huge challenge to realize deep UV (DUV) to the second near-infrared (NIR-Ⅱ) detection for a single broadband PD. Herein

a single PD affording broadband spectral response from 200 to 1700 nm is achieved with a vertical configuration based on quantum dots (QDs) heterojunction and quantum cutting luminescent concentrators (QC–LC). A broadband quantum dots heterojunction as absorption layer was designed by integrating CsPbI

:Ho

perovskite quantum dots (PQDs) and Pb

S QDs to realize the spectral response from 400 to 1700 nm. The QC–LC by employing CsPbCl

:Cr

PQDs as luminescent conversion layer to collect and concentrate photon energy for boosting the DUV–UV (200–400 nm) photons response of PDs by waveguide effect. Such broadband PD displays good stability

and outstanding sensitivity with the detectivity of 3.19 × 10

Jones at 260 nm

1.05 × 10

Jones at 460 nm and 2.23 × 10

Jones at 1550 nm

respectively. The findings provide a new strategy to construct broadband detector

offering more opportunities in future optoelectronic devices.

关键词

Keywords

references

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