Non-volatile photonic-electronic memory via 3D monolithic ferroelectric-silicon ring resonator

Hang Chen

doi:10.1038/s41377-024-01625-9

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Non-volatile photonic-electronic memory via 3D monolithic ferroelectric-silicon ring resonator

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- Non-volatile photonic-electronic memory via 3D monolithic ferroelectric-silicon ring resonator
- Light: Science & Applications Vol. 13, Issue 11, Pages: 2441-2442(2024)
- Affiliations：
  
  Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
- Author bio：
  
  Hang Chen (chen.hang@alu.hit.edu.cn)
- Funds：
- DOI：10.1038/s41377-024-01625-9
  CLC：
- Published：30 November 2024，
  
  Published Online：26 September 2024，
- Accepted：
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Chen, H. Non-volatile photonic-electronic memory via 3D monolithic ferroelectric-silicon ring resonator. Light: Science & Applications, 13, 2441-2442 (2024).
DOI：

Chen, H. Non-volatile photonic-electronic memory via 3D monolithic ferroelectric-silicon ring resonator. Light: Science & Applications, 13, 2441-2442 (2024). DOI： 10.1038/s41377-024-01625-9.

摘要

Abstract

A novel non-volatile photonic-electronic memory

3D integrating an Al-doped HfO

ferroelectric thin film onto a silicon photonic platform using fully compatible electronic and photonic fabrication processes

enables electrically/optically programmable

non-destructively readable

and multi-level storage functions.

关键词

Keywords

references

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