Quantum sensing with optically accessible spin defects in van der Waals layered materials

Hong-Hua Fang; Xiao-Jie Wang; Xavier Marie; Hong-Bo Sun

doi:10.1038/s41377-024-01630-y

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Quantum sensing with optically accessible spin defects in van der Waals layered materials

Perspective

- Quantum sensing with optically accessible spin defects in van der Waals layered materials
- Light: Science & Applications Vol. 13, Issue 12, Pages: 2983-3003(2024)
- Affiliations：
  
  1.State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, 100084 Beijing, China
  2.Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue Rangueil, 31077 Toulouse, France
  3.Institut Universitaire de France, 75231, Paris, France
- Author bio：
  
  Hong-Hua Fang (hfang@mail.tsinghua.edu.cn)
  Hong-Bo Sun (hbsun@tsinghua.edu.cn)
- Funds：
- DOI：10.1038/s41377-024-01630-y
  CLC：
- Received：14 April 2024，
  
  Revised：29 August 2024，
  
  Accepted：2024-09-05，
  
  Published Online：05 November 2024，
  
  Published：31 December 2024
- Accepted：
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Fang, H. H. et al. Quantum sensing with optically accessible spin defects in van der Waals layered materials. Light: Science & Applications, 13, 2983-3003 (2024).
DOI：

Fang, H. H. et al. Quantum sensing with optically accessible spin defects in van der Waals layered materials. Light: Science & Applications, 13, 2983-3003 (2024). DOI： 10.1038/s41377-024-01630-y.

摘要

Abstract

Quantum sensing has emerged as a powerful technique to detect and measure physical and chemical parameters with exceptional precision. One of the methods is to use optically active spin defects within solid-state materials. These defects act as sensors and have made significant progress in recent years

particularly in the realm of two-dimensional (2D) spin defects. In this article

we focus on the latest trends in quantum sensing that use spin defects in van der Waals (vdW) materials. We discuss the benefits of combining optically addressable spin defects with 2D vdW materials while highlighting the challenges and opportunities to use these defects. To make quantum sensing practical and applicable

the article identifies some areas worth further exploration. These include identifying spin defects with properties suitable for quantum sensing

generating quantum defects on demand with control of their spatial localization

understanding the impact of layer thickness and interface on quantum sensing

and integrating spin defects with photonic structures for new functionalities and higher emission rates. The article explores the potential applications of quantum sensing in several fields

such as superconductivity

ferromagnetism

2D nanoelectronics

and biology. For instance

combining nanoscale microfluidic technology with nanopore and quantum sensing may lead to a new platform for DNA sequencing. As materials technology continues to evolve

and with the advancement of defect engineering techniques

2D spin defects are expected to play a vital role in quantum sensing.

关键词

Keywords

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