Simultaneous achieving negative photoconductivity response and volatile resistive switching in Cs<sub>2</sub>CoCl<sub>4</sub> single crystals towards artificial optoelectronic synapse

Huifang Jiang; Huifang Ji; Zhuangzhuang Ma; Dongwen Yang; Jingli Ma; Mengyao Zhang; Xu Li; Meng Wang; Ying Li; Xu Chen; Di Wu; Xinjian Li; Chongxin Shan; Zhifeng Shi

doi:10.1038/s41377-024-01642-8

Go to Nature Website

Your Location：

Home >

Browse articles >

Simultaneous achieving negative photoconductivity response and volatile resistive switching in Cs₂CoCl₄ single crystals towards artificial optoelectronic synapse

Original Articles

- Simultaneous achieving negative photoconductivity response and volatile resistive switching in Cs₂CoCl₄ single crystals towards artificial optoelectronic synapse
- Light: Science & Applications Vol. 13, Issue 12, Pages: 3272-3284(2024)
- Affiliations：
  
  1.Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou, China
  2.School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing, China
- Author bio：
  
  Zhuangzhuang Ma (mazz@zzu.edu.cn)
  Ying Li (liying0326@bit.edu.cn)
  Zhifeng Shi (shizf@zzu.edu.cn)
- Funds：
- DOI：10.1038/s41377-024-01642-8
  CLC：
- Published：31 December 2024，
  
  Published Online：02 December 2024，
  
  Received：21 February 2024，
  
  Revised：20 July 2024，
  
  Accepted：14 September 2024
- Accepted：
Scan QR Code
Jiang, H. F. et al. Simultaneous achieving negative photoconductivity response and volatile resistive switching in Cs₂CoCl₄ single crystals towards artificial optoelectronic synapse. Light: Science & Applications, 13, 3272-3284 (2024).
DOI：

Jiang, H. F. et al. Simultaneous achieving negative photoconductivity response and volatile resistive switching in Cs₂CoCl₄ single crystals towards artificial optoelectronic synapse. Light: Science & Applications, 13, 3272-3284 (2024). DOI： 10.1038/s41377-024-01642-8.

摘要

Abstract

The development of negative photoconductivity (NPC)-related devices is of great significance for numerous applications

such as optoelectronic detection

neuromorph

ic computing

and optoelectronic synapses. Here

an unusual but interesting NPC phenomenon in the novel cesium cobalt chlorine (Cs

CoCl

) single crystal-based optoelectronic devices is reported

which simultaneously possess volatile resistive switching (RS) memory behavior. Joint experiment−theory characterizations reveal that the NPC behavior is derived from the intrinsic vacancy defects of Cs

CoCl

which could trap photogenerated charge carriers and produce an internal electric field opposite to the applied electric field. Such NPC effect enables an abnormal photodetection performance with a decrease in electrical conductivity to illumination. Also

a large specific detectivity of 2.7 × 10

Jones and broadband NPC detection wavelength from 265 to 780 nm were achieved. In addition to the NPC response

the resulting devices demonstrate a volatile RS performance with a record-low electric field of 5 × 10

V m

−1

. By integrating the characteristics of electric-pulse enhancement from RS and light-pulse depression from NPC

an artificial optoelectronic synapse was successfully demonstrated

and based on the simulation of artificial neural network algorithm

the recognition application of handwritten digital images was realized. These pioneer findings are anticipated to contribute significantly to the practical advancement of metal halides in the fields of in-memory technologies and artificial intelligence.

关键词

Keywords

references

Leydecker, T. et al. Flexible non-volatile optical memory thin-film transistor device with over 256 distinct levels based on an organic bicomponent blend.Nat. Nanotechnol.11, 769–775 (2016)..

Yu, D. S. et al. Author correction: scalable synthesis of hierarchically structured carbon nanotube–graphene fibres for capacitive energy storage.Nat. Nanotechnol.15, 811 (2020)..

Nath, S. K. et al. Optically tunable electrical oscillations in oxide-based memristors for neuromorphic computing.Adv. Mater.36, 2400904 (2024)..

Dong, H. et al. Metal Halide Perovskite for next-generation optoelectronics: progresses and prospects.eLight3, 3 (2023)..

Faber, H.&Anthopoulos, T. D. Adding a new layer to 'more than Moore'.Nat. Electron.2, 497–498 (2019)..

Luo, Y. M. et al. Miniature viscometer incorporating GaN optical devices with an ultrawide measurement range.Light. Adv. Manuf.4, 2 (2023)..

Lee, S.-J. et al. Lead halide perovskite sensitized WSe2photodiodes with ultrahigh open circuit voltages.eLight3, 8 (2023)..

Van Gardingen-Cromwijk, T. et al. Non-isoplanatic lens aberration correction in dark-field digital holographic microscopy for semiconductor metrology.Light. Adv. Manuf.4, 36 (2023)..

Ma, Z. Z. et al. High color-rendering index and stable white light-emitting diodes by assembling two broadband emissive self-trapped excitons.Adv. Mater.33, 2001367 (2021)..

Nath, S. K. et al. Schottky-barrier-induced asymmetry in the negative-differential-resistance response of Nb/NbOx/Pt cross-point devices.Phys. Rev. Appl.13, 064024 (2020)..

Huang, P. et al. Nonlocal interaction enhanced biexciton emission in large CsPbBr3nanocrystals.eLight3, 10 (2023)..

Tailor, N. K. et al. Negative photoconductivity: bizarre physics in semiconductors.ACS Mater. Lett.4, 2298–2320 (2022)..

Cui, B. Y. et al. Negative photoconductivity in low-dimensional materials.Chin. Phys. B30, 028507 (2021)..

Xiao, X. L. et al. Negative photoconductivity observed in polycrystalline monolayer molybdenum disulfide prepared by chemical vapor deposition.Appl. Phys. A125, 765 (2019)..

Shen, L. F. et al. Enhanced negative photoconductivity in InAs nanowire phototransistors surface-modified with molecular monolayers.Adv. Mater. Interfaces5, 1701104 (2018)..

Yang, Y. M. et al. Hot carrier trapping induced negative photoconductance in InAs nanowires toward novel nonvolatile memory.Nano Lett.15, 5875–5882 (2015)..

Ding, L. W. et al. Graphene-skeleton heat-coordinated and nanoamorphous-surface-state controlled pseudo-negative-photoconductivity of tiny SnO2nanoparticles.Adv. Mater.27, 3525–3532 (2015)..

Zhu, J. L. et al. Negative and positive photoconductivity modulated by light wavelengths in carbon nanotube film.Appl. Phys. Lett.101, 123117 (2012)..

Qin, J. X. et al. Humidity sensors realized via negative photoconductivity effect in nanodiamonds.J. Phys. Chem. Lett.12, 4079–4084 (2021)..

Singh, S. C. et al. Photothermal and joule-heating-induced negative-photoconductivity-based ultraresponsive and near-zero-biased copper selenide photodetectors.ACS Appl. Electron. Mater.1, 1169–1178 (2019)..

Jin, H. N. et al. Positive and negative photoconductivity characteristics in CsPbBr3/graphene heterojunction.Nanotechnology32, 085202 (2021)..

Lui, C. H. et al. Trion-induced negative photoconductivity in monolayer MoS2.Phys. Rev. Lett.113, 166801 (2014)..

Wu, J. Y. et al. Broadband MoS2field-effect phototransistors: ultrasensitive visible-light photoresponse and negative infrared photoresponse.Adv. Mater.30, 1705880 (2018)..

Ma, Z. Z. et al. Recent advances and opportunities of eco-friendly ternary copper halides: a new superstar in optoelectronic applications.Adv. Mater.35, 2300731 (2023)..

Miao, J. S. et al. Photothermal effect induced negative photoconductivity and high responsivity in flexible black phosphorus transistors.ACS Nano11, 6048–6056 (2017)..

Biswas, C. et al. Negative and positive persistent photoconductance in graphene.Nano Lett.11, 4682–4687 (2011)..

Zhang, Y. X., Liu, Y. C.&Liu, S. Z. Composition engineering of perovskite single crystals for high-performance optoelectronics.Adv. Funct. Mater.33, 2210335 (2023)..

Li, H. Y. et al. Recent progress on synthesis, intrinsic properties and optoelectronic applications of perovskite single crystals.Adv. Funct. Mater.33, 2214339 (2023)..

Haque, M. A. et al. Transition from positive to negative photoconductance in doped hybrid perovskite semiconductors.Adv. Opt. Mater.7, 1900865 (2019)..

Yuan, Y. et al. Negative photoconductivity in Cs4PbBr6single crystal.Phys. Chem. Chem. Phys.22, 14276–14283 (2020)..

Tailor, N. K. et al. Dark self-healing-mediated negative photoconductivity of a lead-free Cs3Bi2Cl9perovskite single crystal.J. Phys. Chem. Lett.12, 2286–2292 (2021)..

Tailor, N. K. et al. Observation of negative photoconductivity in lead-free Cs3Bi2Br9perovskite single crystal.ACS Photon.8, 2473–2480 (2021)..

Zhang, T., Hu, C.&Yang, S. H. Ion migration: a "double-edged sword" for halide-perovskite-based electronic devices.Small Methods4, 1900552 (2020)..

Cheng, X. F. et al. Environmentally robust memristor enabled by lead-free double perovskite for high-performance information storage.Small15, 1905731 (2019)..

Tian, H. et al. Extremely low operating current resistive memory based on exfoliated 2D perovskite single crystals for neuromorphic computing.ACS Nano11, 12247–12256 (2017)..

Liu, X. M. et al. Flexible transparent high-efficiency photoelectric perovskite resistive switching memory.Adv. Funct. Mater.32, 2202951 (2022)..

Mao, J. Y. et al. Lead-free monocrystalline perovskite resistive switching device for temporal information processing.Nano Energy71, 104616 (2020)..

Choi, J. et al. Organolead halide perovskites for low operating voltage multilevel resistive switching.Adv. Mater.28, 6562–6567 (2016)..

Hu, Y. Q. et al. Ultrathin Cs3Bi2I9nanosheets as an electronic memory material for flexible memristors.Adv. Mater. Interfaces4, 1700131 (2017)..

Cao, F. et al. A dual-functional perovskite-based photodetector and memristor for visual memory.Adv. Mater.35, 2304550 (2023)..

Strukov, D. B. et al. The missing memristor was found.Nature453, 80–83 (2008)..

Chen, Y. C. et al. High temperature resistant solar-blind ultraviolet photosensor for neuromorphic computing and cryptography.Adv. Funct. Mater.34, 2315383 (2024)..

Lim, A. R.&Shin, H. W. Nuclear magnetic resonance study of the crystallographically inequivalent Cs(Ⅰ)and Cs(Ⅱ) in a Cs2CoCl4single crystal.J. Phys. Soc. Jpn72, 718–722 (2003)..

Liu, Y. C. et al. A 1300 mm2ultrahigh-performance digital imaging assembly using high-quality perovskite single crystals.Adv. Mater.30, 1707314 (2018)..

Zhang, Y. X. et al. Nucleation-controlled growth of superior lead-free perovskite Cs3Bi2I9single-crystals for high-performance X-ray detection.Nat. Commun.11, 2304 (2020)..

Yang, R. T. et al. High-Efficiency and stable long-persistent luminescence from undoped cesium cadmium chlorine crystals induced by intrinsic point defects.Adv. Sci.10, 2207331 (2023)..

Zhang, F. et al. Stable zero-dimensional cesium indium bromide hollow nanocrystals emitting blue light from self-trapped excitons.Nano Today38, 101153 (2021)..

Zhang, M. Y. et al. High-quality CsAg2I3microwires grown by spatial confinement method for self-powered UV photodetectors.Adv. Opt. Mater.11, 2203054 (2023)..

Ci, P. H. et al. Chemical trends of deep levels in van der Waals semiconductors.Nat. Commun.11, 5373 (2020)..

Bao, C. X.&Gao, F. Physics of defects in metal halide perovskites.Rep. Prog. Phys.85, 096501 (2022)..

Ma, Z. Z. et al. Carbazole-containing polymer-assisted trap passivation and hole-injection promotion for efficient and stable CsCu2I3-based yellow LEDs.Adv. Sci.9, 2202408 (2022)..

Deng, Y. H., Yang, Z. Q.&Ma, R. M. Growth of centimeter-scale perovskite single-crystalline thin film via surface engineering.Nano Converg.7, 25 (2020)..

Ma, J. L. et al. Kinetically regulated growth of Cs3Cu2I5single-crystalline thin films for highly responsive and stable deep-ultraviolet photodetectors.Nano Today52, 101970 (2023)..

Chen, Y. et al. Overcoming the anisotropic growth limitations of free-standing single-crystal halide perovskite films.Angew. Chem. Int. Ed.60, 2629–2636 (2021)..

Liu, Y. C. et al. Two-inch-sized perovskite CH3NH3PbX3(X = Cl, Br, I) crystals: growth and characterization.Adv. Mater.27, 5176–5183 (2015)..

Paramanik, S.&Pal, A. J. Combining negative photoconductivity and resistive switching towards in-memory logic operations.Nanoscale15, 5001–5010 (2023)..

Nath, S. K. et al. Harnessing metal/oxide interlayer to engineer the memristive response and oscillation dynamics of two-terminal memristors.Adv. Funct. Mater.33, 2306428 (2023)..

Li, S. et al. Anatomy of filamentary threshold switching in amorphous niobium oxide.Nanotechnology29, 375705 (2018)..

Yan, Y. Q. et al. Multicolor vision perception of flexible optoelectronic synapse with high sensitivity for skin sunburn warning.Mater. Horiz.11, 1934–1943 (2024)..

Wang, Z. R. et al. Threshold switching of Ag or Cu in dielectrics: materials, mechanism, and applications.Adv. Funct. Mater.28, 1704862 (2018)..

Wu, Y. et al. Capping CsPbBr3with ZnO to improve performance and stability of perovskite memristors.Nano Res.10, 1584–1594 (2017)..

Hua, Q. L. et al. A threshold switching selector based on highly ordered ag nanodots for x-point memory applications.Adv. Sci.6, 1900024 (2019)..

Huang, F. H. et al. Controllable resistive switching in ReS2/WS2heterostructure for nonvolatile memory and synaptic simulation.Adv. Sci.10, 2302813 (2023)..

Paramanik, S.&Pal, A. J. Dimensionality-dependent resistive switching in 0D and 2D Cs3Sb2I9: energy-efficient synaptic functions with the layered-phase.Adv. Electron. Mater.8, 2200211 (2022)..

Hu, J. Y. et al. Lead-free CsCu2Br3perovskite for multilevel resistive switching memory.Appl. Phys. Lett.123, 063301 (2023)..

Xiao, X. Y. et al. Recent advances in halide perovskite memristors: materials, structures, mechanisms, and applications.Adv. Mater. Technol.5, 1900914 (2020)..

Chen, H. et al. Biological function simulation in neuromorphic devices: from synapse and neuron to behavior.Sci. Technol. Adv. Mater.24, 2183712 (2023)..

Fiorillo, C. D.&Williams, J. T. Glutamate mediates an inhibitory postsynaptic potential in dopamine neurons.Nature394, 78–82 (1998)..

Tang, J. et al. A reliable all-2D materials artificial synapse for high energy-efficient neuromorphic computing.Adv. Funct. Mater.31, 2011083 (2021)..

Hu, L. D. et al. Ultrasensitive freestanding and mechanically durable artificial synapse with attojoule power based on na-salt doped polymer for biocompatible neuromorphic interface.Adv. Funct. Mater.31, 2106015 (2021)..

Wang, Y. et al. Dual-modal optoelectronic synaptic devices with versatile synaptic plasticity.Adv. Funct. Mater.32, 2107973 (2022)..

Wang, W. X. et al. Artificial optoelectronic synapses based on TiNxO2–x/MoS2heterojunction for neuromorphic computing and visual system.Adv. Funct. Mater.31, 2101201 (2021)..

Wang, Z. R. et al. Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing.Nat. Mater.16, 101–108 (2017)..

Cheng, Z. G. et al. Optical synaptic devices with ultra-low power consumption for neuromorphic computing.Light Sci. Appl.11, 337 (2022)..

Xiao, F. et al. Graphene/MoS2-xOx/graphene photomemristor with tunable non-volatile responsivities for neuromorphic vision processing.Light Sci. Appl.12, 39 (2023)..

Li, Y. et al. Flexible artificial optoelectronic synapse based on lead-free metal halide nanocrystals for neuromorphic computing and color recognition.Adv. Sci.9, 2202123 (2022)..

Views

Downloads

CSCD

Alert me when the article has been cited

Submit

Tools

Publicity Resources

No data

Related Author

No data

Related Institution

No data

⁰

Simultaneous achieving negative photoconductivity response and volatile resistive switching in Cs2CoCl4 single crystals towards artificial optoelectronic synapse

DOI：10.1038/s41377-024-01642-8

摘要

Abstract

关键词

Keywords

references

Simultaneous achieving negative photoconductivity response and volatile resistive switching in Cs₂CoCl₄ single crystals towards artificial optoelectronic synapse