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1.A*STAR Quantum Innovation Centre (Q.InC), Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore 138634, Singapore
2.Department of Physics, National University of Singapore, Singapore 117542, Singapore
3.Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
4.Centre for Quantum Technologies, National University of Singapore, Singapore 117543, Singapore
Di Zhu (dizhu@nus.edu.sg)
Received:30 May 2024,
Revised:12 September 2024,
Accepted:2024-09-15,
Published Online:03 October 2024,
Published:30 November 2024
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Shi, X., Mohanraj, S.S., Dhyani, V. et al. Efficient photon-pair generation in layer-poled lithium niobate nanophotonic waveguides. Light: Science & Applications, 13, 2847-2856 (2024).
Shi, X., Mohanraj, S.S., Dhyani, V. et al. Efficient photon-pair generation in layer-poled lithium niobate nanophotonic waveguides. Light: Science & Applications, 13, 2847-2856 (2024). DOI: 10.1038/s41377-024-01645-5.
Integrated photon-pair sources are crucial for scalable photonic quantum systems. Thin-film lithium niobate is a promising platform for on-chip photon-pair generation through spontaneous parametric down-conversion (SPDC). However
the device implementation faces practical challenges. Periodically poled lithium niobate (PPLN)
despite enabling flexible quasi-phase matching
suffers from poor fabrication reliability and device repeatability
while conventional modal phase matching (MPM) methods yield limited efficiencies due to inadequate mode overlaps. Here
we introduce a layer-poled lithium niobate (LPLN) nanophotonic waveguide for efficient photon-pair generation. It leverages layer-wise polarity inversion through electrical poling to break spatial symmetry and significantly enhance nonlinear interactions for MPM
achieving a notable normalized second-harmonic generation (SHG) conversion efficiency of 4615% W
−1
cm
−2
. Through a cascaded SHG and SPDC process
we demonstrate photon-pair generation with a normalized brightness of 3.1 × 10
6
Hz nm
−1
mW
−2
in a 3.3 mm long LPLN waveguide
surpassing existing on-chip sources under similar operating configurations. Crucially
our LPLN waveguides offer enhanced fabrication reliability and reduced sensitivity to geometric variations and temperature fluctuations compared to PPLN devices. We expect LPLN to become a promising solution for on-chip nonlinear wavelength conversion and non-classical light generation
with immediate applications in quantum communication
networking
and on-chip photonic quantum information processing.
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