Highly-efficient (&gt; 70%) and Wide-spectral (400–1700 nm) sub-micron-thick InGaAs photodiodes for future high-resolution image sensors

Dae-Myeong Geum; Jinha Lim; Junho Jang; Seungyeop Ahn; SeongKwang Kim; Joonsup Shim; Bong Ho Kim; Juhyuk Park; Woo Jin Baek; Jaeyong Jeong; SangHyeon Kim

doi:10.1038/s41377-024-01652-6

Your Location：

Home >

Browse articles >

Highly-efficient (> 70%) and Wide-spectral (400–1700 nm) sub-micron-thick InGaAs photodiodes for future high-resolution image sensors

Original Articles

- Highly-efficient (> 70%) and Wide-spectral (400–1700 nm) sub-micron-thick InGaAs photodiodes for future high-resolution image sensors
- Light: Science & Applications Vol. 13, Issue 12, Pages: 3224-3235(2024)
- Affiliations：
  
  1.School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
  2.Department of Electrical and Computer Engineering, Inha University, Incheon 22212, Republic of Korea
- Author bio：
  
  SangHyeon Kim (shkim.ee@kaist.ac.kr)
- Funds：
- DOI：10.1038/s41377-024-01652-6
  CLC：
- Received：28 March 2024，
  
  Revised：05 September 2024，
  
  Accepted：2024-09-20，
  
  Published Online：15 November 2024，
  
  Published：31 December 2024
- Accepted：
Scan QR Code
Geum, D. M. et al. Highly-efficient (>70%) and Wide-spectral (400–1700 nm) sub-micron-thick InGaAs photodiodes for future high-resolution image sensors. Light: Science & Applications, 13, 3224-3235 (2024).
DOI：

Geum, D. M. et al. Highly-efficient (>70%) and Wide-spectral (400–1700 nm) sub-micron-thick InGaAs photodiodes for future high-resolution image sensors. Light: Science & Applications, 13, 3224-3235 (2024). DOI： 10.1038/s41377-024-01652-6.

摘要

Abstract

This paper demonstrates the novel approach of sub-micron-thick InGaAs broadband photodetectors (PDs) designed for high-resolution imaging from the visible to short-wavelength infrared (SWIR) spectrum. Conventional approaches encounter challenges such as low resolution and crosstalk issues caused by a thick absorption layer (AL). Therefore

we propose a guided-mode resonance (GMR) structure to enhance the quantum efficiency (QE) of the InGaAs PDs in the SWIR region with only sub-micron-thick AL. The TiO

/Au-based GMR structure compensates for the reduced AL thickness

achieving a remarkably high QE (

70%) from 400 to 1700 nm with only a 0.98 μm AL InGaAs PD (defined as 1 μm AL PD). This represents a reduction in thickness by at least 2.5 times compared to previous results while maintaining a high QE. Furthermore

the rapid transit time is highly expected to result in decreased electrical crosstalk. The effectiveness of the GMR structure is evident in its ability to sustain QE even with a reduced AL thickness

simultaneously enhancing the transit time. This breakthrough offers a viable solution for high-resolution and low-noise broadband image sensors.

关键词

Keywords

references

López, F. & de Frutos, J. Multispectral interference filters and their application to the design of compact non-dispersive infrared gas analysers for pollution control. Sens. Actuators A: Phys. 37-38 , 502–506 (1993)..

Cahill, M. J. L., Pendock, G. J. & Sampson, D. D. Hybrid coherence multiplexing/coarse wavelength-division multiplexing passive optical network for customer access. IEEE Photonics Technol. Lett. 9 , 1032–1034 (1997)..

Choi, Y. et al. KAIST multi-spectral day/night data set for autonomous and assisted driving. IEEE Trans. Intell. Transportation Syst. 19 , 934–948 (2018)..

Geum, D. M. et al. Monolithic integration of visible GaAs and near-infrared InGaAs for multicolor photodetectors by using high-throughput epitaxial lift-off toward high-resolution imaging systems. Sci. Rep. 9 , 18661 (2019)..

Hoang, A. M. et al. High performance bias-selectable three-color short-wave/mid-wave/long-wave infrared photodetectors based on type-Ⅱ InAs/GaSb/AlSb superlattices. Sci. Rep. 6 , 24144 (2016)..

Xie, C. Z. et al. Monolithically integrated InAsSb-based nBnBn heterostructure on GaAs for infrared detection. IEEE J. Sel. Top. Quantum Electron. 24 , 7800106 (2018)..

Xie, C. Z. et al. Monolithic integration of an active InSb-based mid-infrared photopixel with a GaAs MESFET. IEEE Trans. Electron Devices 62 , 4069–4075 (2015)..

Seo, S. W., Geddis, D. L. & Jokerst, N. M. 3-D stacked thin-film photodetectors for multispectral detection applications. IEEE Photonics Technol. Lett. 15 , 578–580 (2003)..

Menon, L. et al. Heterogeneously integrated InGaAs and Si membrane four-color photodetector arrays. IEEE Photonics J. 8 , 6801907 (2016)..

Pejović, V. et al. Infrared colloidal quantum dot image sensors. IEEE Trans. Electron Devices 69 , 2840–2850 (2022)..

Geum, D. M. et al. Arrayed MoS 2 –In 0.53 Ga 0.47 As van der Waals heterostructure for high-speed and broadband detection from visible to shortwave-infrared light. Small 17 , 2007357 (2021)..

Manda, S. et al. High-definition visible-SWIR InGaAs image sensor using Cu-Cu bonding of Ⅲ-Ⅴ to silicon wafer. 2019 IEEE International Electron Devices Meeting (IEDM). San Francisco, CA, USA: IEEE, 16.7.1–16.7.4 (2019).

He, W. et al. Broadband high quantum efficiency InGaAs/InP focal plane arrays via high precision plasma thinning. Opt. Lett. 44 , 6037–6040 (2019)..

Geum, D. M. et al. Monolithic 3D integration of InGaAs photodetectors on Si MOSFETs using sequential fabrication process. IEEE Electron Device Lett. 41 , 433–436 (2020)..

Jeong, J., Geum, D. M. & Kim, S. Heterogeneous and monolithic 3D integration technology for mixed-signal ICs. Electronics 11 , 3013 (2022)..

Etoh, T. G. et al. The theoretical highest frame rate of silicon image sensors. Sensors 17 , 483 (2017)..

Etoh, T. G. et al. Light-in-flight imaging by a silicon image sensor: toward the theoretical highest frame rate. Sensors 19 , 2247 (2019)..

Glasmann, A. & Bellotti, E. Crosstalk mitigation and small-pitch consequences in SWIR InGaAs FPAs. Opt. Express 30 , 12150–12162 (2022)..

Tillement, J. et al. Design and characterization of 5 μm pitch InGaAs photodiodes using in situ doping and shallow mesa architecture for SWIR sensing. Sensors 23 , 9219 (2023)..

Calandri, N. et al. Optical crosstalk in InGaAs/InP SPAD array: analysis and reduction with FIB-etched trenches. IEEE Photonics Technol. Lett. 28 , 1767–1770 (2016)..

Alshahrani, D. O. et al. Emerging type-Ⅱ superlattices of InAs/InAsSb and InAs/GaSb for m id-wavelength infrared photodetectors. Adv. Photonics Res. 3 , 2100094 (2022)..

Geum, D. M. et al. Ultra-high-throughput production of Ⅲ-Ⅴ/Si wafer for electronic and photonic applications. Sci. Rep. 6 , 20610 (2016)..

Kim, H. et al. InAs/GaAs quantum dot infrared photodetector on a Si substrate by means of metal wafer bonding and epitaxial lift-off. Opt. Express 25 , 17562–17570 (2017)..

Adachi, S. Optical dispersion relations for GaP, GaAs, GaSb, InP, InAs, InSb, Al x Ga 1− x As, and In 1− x Ga x As y P 1− y . J. Appl. Phys. 66 , 6030–6040 (1989)..

Jang, J. et al. Grating–resonance InGaAs narrowband photodetector for multispectral detection in NIR–SWIR region. 2022 International Electron Devices Meeting (IEDM). San Francisco, CA, USA: IEEE, 19.4.1–19.4.4 (2022).

Lim, J. et al. Experimental demonstration of germanium-on-silicon slot waveguides at mid-infrared wavelength. IEEE Photonics J. 14 , 5828709 (2022)..

Jeong, J. et al. Heterogeneous and monolithic 3D integration of Ⅲ–Ⅴ-based radio frequency devices on Si CMOS circuits. ACS Nano 16 , 9031–9040 (2022)..

Kim, S. et al. Fabrication of high-quality GaAs-based photodetector arrays on Si. Appl. Phys. Lett. 110 , 153505 (2017)..

Kim, H. S. et al. Reduction of surface leakage current in InAs/GaSb strained layer long wavelength superlattice detectors using SU-8 passivation. Appl. Phys. Lett. 97 , 143512 (2010)..

Li, X. Z. et al. High performance visible-SWIR flexible photodetector based on large-area InGaAs/InP PIN structure. Sci. Rep. 12 , 7681 (2022)..

Shin, G. H. et al. Si–MoS 2 vertical heterojunction for a photodetector with high responsivity and low noise equivalent power. ACS Appl. Mater. Interfaces 11 , 7626–7634 (2019)..

Roy, F. et al. Challenges in CMOS-based images. Phys. Status Solidi (C.) 11 , 50–56 (2014)..

Ahn, J. et al. 7.1 A 1/4-inch 8Mpixel CMOS image sensor with 3D backside-illuminated 1.12 μm pixel with front-side deep-trench isolation and vertical transfer gate. 2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC). San Francisco, CA, USA: IEEE, 124–125 (2014).

Chen, R. et al. Nanophotonic integrated circuits from nanoresonators grown on silicon. Nat. Commun. 5 , 4325 (2014)..

Wang, Y. S. et al. High-speed InGaAs P-I-N photodetector with planar buried heterostructure. IEEE Trans. Electron Devices 56 , 1347–1350 (2009)..

Rogalski, A. et al. Trends in performance limits of the HOT infrared photodetectors. Appl. Sci. 11 , 501 (2021)..

Arora, K. et al. Ultrahigh performance of self-powered β-Ga 2 O 3 thin film solar-blind photodetector grown on cost-effective Si substrate using high-temperature seed layer. ACS Photonics 5 , 2391–2401 (2018)..

Arora, K. et al. Spectrally selective and highly sensitive UV photodetection with UV-A, C band specific polarity switching in silver plasmonic nanoparticle enhanced gallium oxide thin-film. Adv. Optical Mater. 8 , 2000212 (2020)..

Arora, K. & Kumar, M. Sputte red-growth of high-temperature seed-layer assisted β-Ga 2 O 3 thin film on silicon-substrate for cost-effective solar-blind photodetector application. ECS J. Solid State Sci. Technol. 9 , 065013 (2020)..

Kumar, N., Arora, K. & Kumar, M. High Performance, flexible and room temperature grown amorphous Ga 2 O 3 solar-blind photodetector with amorphous indium-zinc-oxide transparent conducting electrodes. J. Phys. D: Appl. Phys. 52 , 335103 (2019)..

Arora, K., Kaur, K. & Kumar, M. Superflexible, self-biased, high-voltage-stable, and seal-packed office-paper based gallium-oxide photodetector. ACS Appl. Electron. Mater. 3 , 1852–1863 (2021)..

Kim, Y. C. et al. Luminescent down-shifting CsPbBr 3 perovskite nanocrystals for flexible Cu(In, Ga)Se 2 solar cells. Nanoscale 12 , 558–562 (2020)..

Fan, D. J., Lee, K. & Forrest, S. R. Flexible thin-film InGaAs photodiode focal plane array. Acs Photonics 3 , 670–676 (2016)..

Son, B. et al. High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeO x surface passivation. Opt. Express 28 , 23978–23990 (2020)..

Views

Downloads

CSCD

Alert me when the article has been cited

Submit

Tools

Publicity Resources

No data

Related Author

No data

Related Institution

No data

⁰

Highly-efficient (> 70%) and Wide-spectral (400–1700 nm) sub-micron-thick InGaAs photodiodes for future high-resolution image sensors

DOI：10.1038/s41377-024-01652-6

摘要

Abstract

关键词

Keywords

references