Boosting bulk photovoltaic effect in transition metal dichalcogenide by edge semimetal contact

Shuang Qiao; Jihong Liu; Chengdong Yao; Ni Yang; Fangyuan Zheng; Wanqing Meng; Yi Wan; Philip C. Y. Chow; Dong-Keun Ki; Lijie Zhang; Yumeng Shi; Lain-Jong Li

doi:10.1038/s41377-024-01691-z

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Boosting bulk photovoltaic effect in transition metal dichalcogenide by edge semimetal contact

Original Articles

- Boosting bulk photovoltaic effect in transition metal dichalcogenide by edge semimetal contact
- Light: Science & Applications Vol. 14, Issue 1, Pages: 197-205(2025)
- Affiliations：
  
  1.Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, 071002 Baoding, China
  2.Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, China
  3.Department of Physics and HK Institute of Quantum Science & Technology, The University of Hong Kong, Hong Kong, China
  4.Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, China
  5.Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing Jiaotong University, 100044 Beijing, China
- Author bio：
  
  Shuang Qiao (sqiao@hbu.edu.cn)
  Lain-Jong Li (lanceli1@hku.hk)
- Funds：
- DOI：10.1038/s41377-024-01691-z
  CLC：
- Published：31 January 2025，
  
  Published Online：02 January 2025，
  
  Received：28 June 2024，
  
  Revised：11 November 2024，
  
  Accepted：2024-11-12
- Accepted：
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Qiao, S. et al. Boosting bulk photovoltaic effect in transition metal dichalcogenide by edge semimetal contact. Light: Science & Applications, 14, 197-205 (2025).
DOI：

Qiao, S. et al. Boosting bulk photovoltaic effect in transition metal dichalcogenide by edge semimetal contact. Light: Science & Applications, 14, 197-205 (2025). DOI： 10.1038/s41377-024-01691-z.

摘要

Abstract

Oxide materials with a non-centrosymmetric structure exhibit bulk photovoltaic effect (BPVE) but with a low cell efficiency. Over the past few years

relatively larger BPVE coefficients have been reported for two-dimensional (2D) layers and stacks with asymmety-induced spontaneous polarization. Here

we report a crucial breakthrough in boosting the BPVE in 3R-MoS

by adopting edge contact (EC) geometry using bismuth semimetal electrode. In clear contrast to the typically used top contact (TC) geometry

the EC metal which strongly adheres to the edges and the subtrates can induce a pronounced tensile strain to the 3R-MoS

and the lateral contact geometry allows to completely access to in-plane polarization from underneath layers reachable by light

leading to

100 times of BPVE enhancement in photocurrent. We further design a 3R-MoS

/WSe

heterojunction to demonstrate constructive coupling of BPVE with the conventional photovoltaic effect

indicating their potential in photodetectors and photovoltaic devices.

关键词

Keywords

references

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