Ultrasensitive photoelectric detection with room temperature extremum

Tuntan Wu; Yongzhen Li; Qiangguo Zhou; Qinxi Qiu; Yanqing Gao; Wei Zhou; Niangjuan Yao; Junhao Chu; Zhiming Huang

doi:10.1038/s41377-024-01701-0

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Ultrasensitive photoelectric detection with room temperature extremum

Original Articles

- Ultrasensitive photoelectric detection with room temperature extremum
- Light: Science & Applications Vol. 14, Issue 4, Pages: 992-1001(2025)
- Affiliations：
  
  1.State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
  2.Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
  3.University of Chinese Academy of Sciences, Beijing 100049, China
  4.Institute of Optoelectronics, Fudan University, Shanghai 200438, China
  5.Key Laboratory of Space Active Optical-Electro Technology, Chinese Academy of Sciences, Shanghai 200083, China
- Author bio：
  
  Zhiming Huang (zmhuang@mail.sitp.ac.cn)
- Funds：
- DOI：10.1038/s41377-024-01701-0
  CLC：
- Received：09 May 2024，
  
  Revised：22 November 2024，
  
  Accepted：2024-11-26，
  
  Published Online：26 February 2025，
  
  Published：30 April 2025
- Accepted：
Scan QR Code
Wu, T. T. et al. Ultrasensitive photoelectric detection with room temperature extremum. Light: Science & Applications, 14, 992-1001 (2025).
DOI：

Wu, T. T. et al. Ultrasensitive photoelectric detection with room temperature extremum. Light: Science & Applications, 14, 992-1001 (2025). DOI： 10.1038/s41377-024-01701-0.

摘要

Abstract

Room-temperature photodetection holds pivotal significance in diverse applications such as sensing

imaging

telecommunications

and environmental remote sensing due to its simplicity

versatility

and indispensability. Although different kinds of photon and thermal

detectors have been realized

high sensitivity of photodetection with room temperature extremum is not reported until now. Herein

we find evident peaks in the photoelectric response originated from the anomalous excitonic insulator phase transition in tantalum nickel selenide (Ta

NiSe

) for room-temperature optimized photodetection from visible light to terahertz ranges. Extreme sensitivity of photoconductive detector with specific detectivity (D*) of 5.3 × 10

cm·Hz

1/2

·W

−1

and electrical bandwidth of 360 kHz is reached in the terahertz range

which is one to two orders of magnitude improvement compared to that of the state-of-the-art room-temperature terahertz detectors. The van der Waals heterostructure of Ta

NiSe

/WS

is further constructed to suppress the dark current at room temperature with much improved ambient D* of 4.1 × 10

cm·Hz

1/2

·W

−1

in the visible wavelength

rivaling that of the typical photodetectors

and superior photoelectric performance in the terahertz range compared to the photoconductor device. Our results open a new avenue for optoelectronics via excitonic insulator phase transition in broad wavelength bands and pave the way for applications in sensitive environmental and remote sensing at room temperature.

关键词

Keywords

references

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