
1.Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, China
2.Macao Institute of Materials Science and Engineering, Macau University of Science and Technology, Macau SAR, Taipa, China
Ya-Kun Wang (wangyakun@suda.edu.cn)
Liang-Sheng Liao (lsliao@suda.edu.cn)
Published:31 January 2025,
Published Online:07 January 2025,
Received:25 July 2024,
Revised:23 November 2024,
Accepted:2024-11-27
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Liu, Z. S. et al. Liquid bidentate ligand for full ligand coverage towards efficient near-infrared perovskite quantum dot LEDs. Light: Science & Applications, 14, 271-279 (2025).
Liu, Z. S. et al. Liquid bidentate ligand for full ligand coverage towards efficient near-infrared perovskite quantum dot LEDs. Light: Science & Applications, 14, 271-279 (2025). DOI: 10.1038/s41377-024-01704-x.
Perovskite quantum dots (PQDs) show promise in light-emitting diodes (LEDs). However
near-infrared (NIR) LEDs employing PQDs exhibit inferior external quantum efficiency related to the PQD emitting in the visible range. One fundamental issue arises from the PQDs dynamic surface: the ligand loss and ions migration to the interfacial sites serve as quenching centers
resulting in trap-assisted recombination and carrier loss. In this work
we developed a chemical treatment strategy to eliminate the interface quenching sites and achieve high carrier utilization. We employ a bidentate and liquid agent (Formamidine thiocyanate
FASCN) with tight binding to suppress the ligand loss and the formation of interfacial quenching sites: the FASCN-treated films exhibit fourfold higher binding energy than the original oleate ligands. Furthermore
the short ligands (carbon chain <3) enable the treated films to show eightfold higher conductivity; and the liquid characteristics of FASCN avoid the use of high polar solvents and guarantee better passivation. The high conductivity ensures efficient charge transportation
enabling PQD-based NIR-LEDs to have a record-low voltage of 1.6 V at 776 nm. Furthermore
the champion EQE of the treated LEDs is ~23%: this is twofold higher than the control
and represents the highest among reported PQD-based NIR-LEDs.
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