Realizing low voltage-driven bright and stable quantum dot light-emitting diodes through energy landscape flattening

Yiting Liu; Yingying Sun; Xiaohan Yan; Bo Li; Lei Wang; Jianshun Li; Jiahui Sun; Yaqi Guo; Weipeng Liu; Binbin Hu; Qingli Lin; Fengjia Fan; Huaibin Shen

doi:10.1038/s41377-024-01727-4

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Realizing low voltage-driven bright and stable quantum dot light-emitting diodes through energy landscape flattening

Original Articles

- Realizing low voltage-driven bright and stable quantum dot light-emitting diodes through energy landscape flattening
- Light: Science & Applications Vol. 14, Issue 2, Pages: 468-475(2025)
- Affiliations：
  
  1.Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Henan University, 475004 Kaifeng, China
  2.Hefei National Laboratory for Physical Sciences at the Microscale and Department of Modern Physics, CAS Key Laboratory of Microscale Magnetic Resonance, Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, 230026 Hefei, China
- Author bio：
  
  Lei Wang (wanglei7869@henu.edu.cn)
  Fengjia Fan (ffj@ustc.edu.cn)
  Huaibin Shen (shenhuaibin@henu.edu.cn)
- Funds：
- DOI：10.1038/s41377-024-01727-4
  CLC：
- Received：03 October 2024，
  
  Revised：05 December 2024，
  
  Accepted：2024-12-18，
  
  Published Online：16 January 2025，
  
  Published：28 February 2025
- Accepted：
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Liu, Y. T. et al. Realizing low voltage-driven bright and stable quantum dot light-emitting diodes through energy landscape flattening. Light: Science & Applications, 14, 468-475 (2025).
DOI：

Liu, Y. T. et al. Realizing low voltage-driven bright and stable quantum dot light-emitting diodes through energy landscape flattening. Light: Science & Applications, 14, 468-475 (2025). DOI： 10.1038/s41377-024-01727-4.

摘要

Abstract

Solution-processed quantum dot light-emitting diodes (QLEDs) hold great potential as competitive candidates for display and lighting applications. However

the serious energy disorder between the quantum dots (QDs) and hole transport layer (HTL) makes it challenging to achieve high-performance devices at lower voltage ranges. Here

we introduce "giant" fully alloy CdZnSe/ZnSeS core/shell QDs (size ~ 19 nm) as the emitting layer to build high-efficient and stable QLEDs. The synthesized CdZnSe-based QDs reveal a decreased ground-state band splitting

shallow valence band maximum

and improved quasi-Fermi level splitting

which effectively flatten the energy landscape between the QD layer and hole transport layer. The higher electron concentration and accelerated hole injection significantly promote the carrier radiative recombination dynamics. Consequently

CdZnSe-based device exhibits a high power conversion efficiency (PCE) of 27.3% and an ultra-low efficiency roll-off

with a high external quantum efficiency (EQE) exceeding 25% over a wide range of low driving voltages (1.8-3.0 V) and low heat generation. The record-high luminance levels of 1

400 and 8

600 cd m

-2

are achieved at bandgap voltages of 100% and 120%

respectively. Meanwhile

These LEDs show an unprecedented operation lifetime T

(time for the luminance to decrease to 95%) of 72

968 h at 1

000 cd m

-2

. Our work points to a novel path to flatten energy landscape at the QD-related interface for solution-processed photoelectronic dev

ices.

关键词

Keywords

references

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