Versatile on-chip polarization-sensitive detection system for optical communication and artificial vision

Zhilin Liu; Mingxiu Liu; Liujian Qi; Nan Zhang; Bin Wang; Xiaojuan Sun; Rongjun Zhang; Dabing Li; Shaojuan Li

doi:10.1038/s41377-025-01744-x

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Versatile on-chip polarization-sensitive detection system for optical communication and artificial vision

Original Articles

- Versatile on-chip polarization-sensitive detection system for optical communication and artificial vision
- Light: Science & Applications Vol. 14, Issue 3, Pages: 721-731(2025)
- Affiliations：
  
  1.Key Laboratory of Luminescence Science and Technology, Chinese Academy of Sciences & State Key Laboratory of Luminescence Science and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin 130033, China
  2.University of Chinese Academy of Sciences, Beijing 100049, China
  3.Department of Optical Science and Engineering, Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Proception, Institute of Optoelectronics, Fudan University, Shanghai 200433, China
- Author bio：
  
  Shaojuan Li (lishaojuan@ciomp.ac.cn)
- Funds：
- DOI：10.1038/s41377-025-01744-x
  CLC：
- Received：09 August 2024，
  
  Revised：26 December 2024，
  
  Accepted：2025-01-03，
  
  Published Online：03 February 2025，
  
  Published：31 March 2025
- Accepted：
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Liu, Z. L. et al. Versatile on-chip polarization-sensitive detection system for optical communication and artificial vision. Light: Science & Applications, 14, 721-731 (2025).
DOI：

Liu, Z. L. et al. Versatile on-chip polarization-sensitive detection system for optical communication and artificial vision. Light: Science & Applications, 14, 721-731 (2025). DOI： 10.1038/s41377-025-01744-x.

摘要

Abstract

Polarization is an important attribute of light and can be artificially modulated as a versatile information carrier. Conventional polarization-sensitive photodetection relies on a combination of polarizing optical elements and standard photodetectors

which requires a substantial amount of space and manufacturing expenses. Although on-chip polarized photodetectors have been realized in recent years based on two-dimensional (2D) materials with low-s

ymmetry crystal structures

they are limited by the intrinsic anisotropic property and thus the optional range of materials

the operation wavelength

and more importantly

the low anisotropic ratio

hindering their practical applications. In this work

we construct a versatile platform that transcends the constraints of material anisotropy

by integrating WSe

-based photodetector with MoS

-based field-effect transistor

delivering high-performance broadband polarization detection capability with orders of magnitude improvement in anisotropic ratio and on/off ratio. The polarization arises from hot electron injection caused by the plasmonic metal electrode and is amplified by the transistor to raise the anisotropic ratio from 2 to an impressive value over 60 in the infrared (IR) band

reaching the level of existing applications. Meanwhile

the system achieves a significant improvement in photosensitivity

with an on/off ratio of over 10

in the IR band. Based on the above performance optimization

we demonstrated its polarization-modulated IR optical communication ability and polarized artificial vision applications with a high image recognition accuracy of ~99%. The proposed platform provides a promising route for the development of the long-sought minimized

high-performance

multifunctional optoelectronic systems.

关键词

Keywords

references

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