Critical band-to-band-tunnelling based optoelectronic memory

Hangyu Xu; Runzhang Xie; Jinshui Miao; Zhenhan Zhang; Haonan Ge; Xuming Shi; Min Luo; Jinjin Wang; Tangxin Li; Xiao Fu; Johnny C. Ho; Peng Zhou; Fang Wang; Weida Hu

doi:10.1038/s41377-025-01756-7

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Critical band-to-band-tunnelling based optoelectronic memory

Original Articles

- Critical band-to-band-tunnelling based optoelectronic memory
- Light: Science & Applications Vol. 14, Issue 3, Pages: 757-766(2025)
- Affiliations：
  
  1.State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, 200083, Shanghai, China
  2.University of Chinese Academy of Sciences, Beijing, China
  3.ASIC & System State Key Laboratory, School of Microelectronics, Fudan University, Shanghai, China
  4.Shanghai Research Institute for Intelligent Autonomous Systems, Tongji University, 200092, Shanghai, China
  5.Department of Materials Science and Engineering and State Key Laboratory of Terahertz and Millimeter waves, City University of Hong Kong, Kowloon Tong, Hong Kong SAR, China
- Author bio：
  
  Fang Wang (fwang@mail.sitp.ac.cn)
  Weida Hu (wdhu@mail.sitp.ac.cn)
- Funds：
- DOI：10.1038/s41377-025-01756-7
  CLC：
- Received：12 September 2024，
  
  Revised：03 January 2025，
  
  Accepted：2025-01-10，
  
  Published Online：07 February 2025，
  
  Published：31 March 2025
- Accepted：
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Xu, H. Y. et al. Critical band-to-band-tunnelling based optoelectronic memory. Light: Science & Applications, 14, 757-766 (2025).
DOI：

Xu, H. Y. et al. Critical band-to-band-tunnelling based optoelectronic memory. Light: Science & Applications, 14, 757-766 (2025). DOI： 10.1038/s41377-025-01756-7.

摘要

Abstract

Neuromorphic vision hardware

embedded with multiple functions

has recently emerged as a potent platform for machine vision. To realize memory in sensor functions

reconfigurable and non-volatile manipulation of photocarriers is highly desirable. However

previous technologies bear mechanism challenges

such as the ambiguous optoelectronic memory mechanism and high potential barrier

resulting in a limited response speed and a high operating voltage. Here

for the first time

we propose a

critical band-to-band tunnelling (BTBT)

based device that combines sensing

integration and memory functions. The nearly infinitesimal barrier facilitates the tunnelling process

resulting in a broadband application range (940 nm). Furthermore

the observation of dual negative differential resistance (NDR) points confirms that the

critical BTBT

of photocarriers contributes to the sub-microsecond photomemory speed. Since the photomemory speed

with no motion blur

is important for motion detection

the critical BTBT memory is expected to enable moving target tracking and recognition

underscoring its superiority in intelligent perception.

关键词

Keywords

references

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