Versatile optoelectronic memristor based on wide-bandgap Ga<sub>2</sub>O<sub>3</sub> for artificial synapses and neuromorphic computing

Dongsheng Cui; Mengjiao Pei; Zhenhua Lin; Hong Zhang; Mengyang Kang; Yifei Wang; Xiangxiang Gao; Jie Su; Jinshui Miao; Yun Li; Jincheng Zhang; Yue Hao; Jingjing Chang

doi:10.1038/s41377-025-01773-6

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Versatile optoelectronic memristor based on wide-bandgap Ga₂O₃ for artificial synapses and neuromorphic computing

Original Articles

- Versatile optoelectronic memristor based on wide-bandgap Ga₂O₃ for artificial synapses and neuromorphic computing
- Light: Science & Applications Vol. 14, Issue 6, Pages: 1618-1628(2025)
- Affiliations：
  
  1.Advanced Interdisciplinary Research Center for Flexible Electronics, Academy of Advanced Interdisciplinary Research, Xidian University, 710071 Xi'an, China
  2.State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, School of Microelectronics, Xidian University, 710071 Xi'an, China
  3.National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093 Nanjing, China
  4.State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- Author bio：
  
  Zhenhua Lin (zhlin@xidian.edu.cn)
  Yun Li (yli@nju.edu.cn)
  Jingjing Chang (jjingchang@xidian.edu.cn)
- Funds：
- DOI：10.1038/s41377-025-01773-6
  CLC：
- Received：26 July 2024，
  
  Revised：15 January 2025，
  
  Accepted：31 January 2025，
  
  Published Online：15 April 2025，
  
  Published：30 June 2025
- Accepted：
Scan QR Code
Cui, D. S. et al. Versatile optoelectronic memristor based on wide-bandgap Ga₂O₃ for artificial synapses and neuromorphic computing. Light: Science & Applications, 14, 1618-1628 (2025).
DOI：

Cui, D. S. et al. Versatile optoelectronic memristor based on wide-bandgap Ga₂O₃ for artificial synapses and neuromorphic computing. Light: Science & Applications, 14, 1618-1628 (2025). DOI： 10.1038/s41377-025-01773-6.

摘要

Abstract

Optoelectronic memristors possess capabilities of data storage and mimicking human visual perception. They hold great promise in neuromorphic visual systems (NVs). This study introduces the amorphous wide-bandgap Ga

photoelectric synaptic memristor

which achieves 3-bit data storage through the adjustment of current compliance (

) and the utilization of variable ultraviolet (UV-254 nm) light intensities. The "AND" and "OR" logic gates in memristor-aided logic (MAGIC) are implemented by utilizing voltage polarity and UV light as input signals. The device also exhibits highly stable synaptic characteristics such as paired-pulse facilitation (PPF)

spike-intensity dependent plasticity (SIDP)

spike-number dependent plasticity (SNDP)

spike-time dependent plasticity (STDP)

spike-frequency dependent plasticity (SFDP) and the learning experience behavior. Finally

when integrated into an artificial neural network (ANN)

the Ag/Ga

/Pt memristive device mimicked optical pulse potentiation and electrical pulse depression with high pattern accuracy (90.7%). The single memristive cells with multifunctional features are promising candidates for optoelectronic memory storage

neuromorphic computing

and artificial visual perception applications.

关键词

Keywords

references

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Versatile optoelectronic memristor based on wide-bandgap Ga2O3 for artificial synapses and neuromorphic computing

DOI：10.1038/s41377-025-01773-6

摘要

Abstract

关键词

Keywords

references

Versatile optoelectronic memristor based on wide-bandgap Ga₂O₃ for artificial synapses and neuromorphic computing