A 3.584 Tbps coherent receiver chip on InP-LiNbO<sub>3</sub> wafer-level integration platform

Xiaojun Xie; Chao Wei; Xingchen He; Yake Chen; Chenghao Wang; Jihui Sun; Lin Jiang; Jia Ye; Xihua Zou; Wei Pan; Lianshan Yan

doi:10.1038/s41377-025-01821-1

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A 3.584 Tbps coherent receiver chip on InP-LiNbO₃ wafer-level integration platform

Original Articles

- A 3.584 Tbps coherent receiver chip on InP-LiNbO₃ wafer-level integration platform
- Light: Science & Applications Vol. 14, Issue 6, Pages: 1727-1738(2025)
- Affiliations：
  
  Key Laboratory of Photonic-Electronic Integration and Communication-Sensing Convergence, School of Information Science and Technology, Southwest Jiaotong University, 611756 Chengdu, China
- Author bio：
  
  Xiaojun Xie (xxie@swjtu.edu.cn)
  Lianshan Yan (lsyan@home.swjtu.edu.cn)
- Funds：
- DOI：10.1038/s41377-025-01821-1
  CLC：
- Received：20 August 2024，
  
  Revised：08 March 2025，
  
  Accepted：09 March 2025，
  
  Published Online：25 April 2025，
  
  Published：30 June 2025
- Accepted：
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Xie, X. J. et al. A 3.584 Tbps coherent receiver chip on InP-LiNbO₃ wafer-level integration platform. Light: Science & Applications, 14, 1727-1738 (2025).
DOI：

Xie, X. J. et al. A 3.584 Tbps coherent receiver chip on InP-LiNbO₃ wafer-level integration platform. Light: Science & Applications, 14, 1727-1738 (2025). DOI： 10.1038/s41377-025-01821-1.

摘要

Abstract

The rapid advancement of the thin-film lithium niobate (LiNbO

) platform has established it as a premier choice for high-performance photonics integrated circuits. However

the scalability and cost-efficiency of this platform are hindered by the reliance on chip-level fabrication and integration for passive and active components

necessitating a robust wafer-level LiNbO

heterogeneous integration platform. Despite its critical role in enabling ultrahigh-sp

eed optical interconnects

as well as optical mmWave/THz sensing and communication

the realization of ultrahigh-speed photodiodes and optical coherent receivers on the LiNbO

platform remains an unresolved challenge. This is primarily due to the challenges associated with the large-scale integration of direct-bandgap materials. To address these challenges

we have developed a scalable

high-speed InP-LiNbO

wafer-level heterogeneous integration platform. This platform facilitates the fabrication of ultrahigh-speed photodiodes with a bandwidth of 140 GHz

capable of receiving high-quality 100-Gbaud pulse amplitude modulation (PAM4) signals. Moreover

we demonstrate a seven-channel

single-polarization I–Q coherent receiver chip with an aggregate receiving capacity of 3.584 Tbit s

-1

. This coherent receiver exhibits a balanced detection bandwidth of 60 GHz and a common mode rejection ratio (CMRR) exceeding 20 dB. It achieves receiving capacities of 600 Gbit s

-1

with a 100-Gbaud 64-QAM signal and 512 Gbit s

-1

with a 128-Gbaud 16-QAM signal. Furthermore

energy consumption as low as 9.6 fJ bit

-1

and 13.5 fJ bit

-1

is achieved for 200 Gbit s

-1

and 400 Gbit s

-1

capacities

respectively. Our work provides a viable pathway toward enabling Pbps hyperscale data center interconnects

as well as optical mmWave/THz sensing and communication.

关键词

Keywords

references

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A 3.584 Tbps coherent receiver chip on InP-LiNbO3 wafer-level integration platform

DOI：10.1038/s41377-025-01821-1

摘要

Abstract

关键词

Keywords

references

A 3.584 Tbps coherent receiver chip on InP-LiNbO₃ wafer-level integration platform