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1.Key Laboratory of Light Field Manipulation and Information Acquisition, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, China
2.Department of Electronics and Nanoengineering, Aalto University, Espoo, Finland
3.State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xi dian University, Xi'an, China
4.State Key Laboratory of Transient Optics and Photonics, Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi'an, China
5.School of Microelectronics, Northwestern Polytechnical University, Xi'an, China
Zhipei Sun (zhipei.sun@aalto.fi)
Xuetao Gan (xuetaogan@nwpu.edu.cn)
Received:01 July 2024,
Revised:21 February 2025,
Accepted:13 March 2025,
Published Online:07 July 2025,
Published:31 August 2025
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Tian, R. J. et al. On-chip graphene photodetectors with a nonvolatile p–i–n homojunction. Light: Science & Applications, 14, 2360-2368 (2025).
Tian, R. J. et al. On-chip graphene photodetectors with a nonvolatile p–i–n homojunction. Light: Science & Applications, 14, 2360-2368 (2025). DOI: 10.1038/s41377-025-01832-y.
Graphene's unique photothermoelectric (PTE) effect
combined with its compatibility for on-chip fabrication
promises its development in chip-integrated photodetectors wit
h ultralow dark-current and ultrafast speed. Previous designs of on-chip graphene photodetectors required external electrical biases or gate voltages to separate photocarriers
leading to increased power consumption and complex circuitry. Here
we demonstrate a nonvolatile graphene
p
–
i
–
n
homojunction constructed on a silicon photonic crystal waveguide
which facilitates PTE-based photodetection without the need for electrical bias or gate voltages. By designing an air-slotted photonic crystal waveguide as two individual silicon back gates and employing ferroelectric dielectrics with remnant polarization fields
the nonvolatile
p
–
i
–
n
homojunction with a clear gradient of Seebeck coefficient is electrically configured. Hot carriers in the graphene channel generated from the absorption of waveguide evanescent field are separated by the nonvolatile
p
–
i
–
n
homojunction effectively to yield considerable photocurrents. With zero-bias and zero-gate voltage
the nonvolatile graphene
p
–
i
–
n
homojunction photodetector integrated on the optical waveguide exhibits high and flat responsivity of 193 mA W
−1
over the broadband wavelength range of 1560–1630 nm and an ultrafast dynamics bandwidth of 17 GHz measured in the limits of our instruments. With the high-performance on-chip photodetection
the nonvolatile graphene homojunction directly constructed on silicon photonic circuits promises the extended on-chip functions of the optoelectronic synapse
in-memory sensing and computing
and neuromorphic computing.
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