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1.Hefei National Research Center for Physical Sciences at the Microscale and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China
2.Shanghai Research Center for Quantum Science and CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Shanghai 201315, China
3.Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
4.Department of Physics, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong SAR, China
Yuming He (yuminghe@mail.ustc.edu.cn)
Yongheng Huo (yongheng@ustc.edu.cn)
Received:05 January 2025,
Revised:18 March 2025,
Accepted:19 March 2025,
Published Online:22 April 2025,
Published:30 June 2025
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Zhao, J. Y. et al. Deterministic resonance fluorescence improvement of single quantum dots by optimized surface passivation. Light: Science & Applications, 14, 1711-1717 (2025).
Zhao, J. Y. et al. Deterministic resonance fluorescence improvement of single quantum dots by optimized surface passivation. Light: Science & Applications, 14, 1711-1717 (2025). DOI: 10.1038/s41377-025-01838-6.
The degradation caused by surface states restricts the performance of near-surface semiconductor quantum dots (QDs). Here
we demonstrate optimized passivation techniques to improve the resonance fluorescence (RF) with dot-to-dot comparisons. These optimized techniques
for the first time
reduce the linewidth and noise level of existing pulsed-RF signals
as well as revive pulsed-RF signals which originally are vanishing. The improvements are confirmed to originate from reduced surface state density and electric field after passivation
through optical and surface science characterizations. Our study promotes applications of the passivation techniques in thin-film quantum devices
paving the way for the further development of optimal QD-based quantum light sources.
Grant, N. E. & Murphy, J. D. Temporary surface passivation for characterisation of bulk defects in silicon: a review. Phys. Status Solidi Rapid Res. Lett. 11 , 1700243 (2017)..
Chakravarthi, S. et al. Impact of surface and laser-induced noise on the spectral stability of implanted nitrogen-vacancy centers in diamond. Phys. Rev. B 104 , 085425 (2021)..
Zhou, L. et al. Brief review of surface passivation on Ⅲ-Ⅴ semiconductor. Crystals 8 , 226 (2018)..
Hasegawa, H. & Akazawa, M. Surface passivation technology for Ⅲ-Ⅴ semiconductor nanoelectronics. Appl. Surf. Sci. 255 , 628–632 (2008)..
Aharonovich, I., Englund, D. & Toth, M. Solid-state single-photon emitters. Nat. Photonics 10 , 631–641 (2016)..
Senellart, P., Solomon, G. & White, A. High-performance semiconductor quantum-dot single-photon sources. Nat. Nanotechnol. 12 , 1026–1039 (2017)..
Wang, H. et al. On-demand semiconductor source of entangled photons which simultaneously has high fidelity, efficiency, and indistinguishability. Phys. Rev. Lett. 122 , 113602 (2019)..
Liu, J. et al. A solid-state source of strongly entangled photon pairs with high brightness and indistinguishability. Nat. Nanotechnol. 14 , 586–593 (2019)..
Wang, H. et al. Towards optimal single-photon sources from polarized microcavities. Nat. Photonics 13 , 770–775 (2019)..
Tomm, N. et al. A bright and fast source of coherent single photons. Nat. Nanotechnol. 16 , 399–403 (2021)..
Ding, X. et al. High-efficiency single-photon source above the loss-tolerant threshold for efficient linear optical quantum computing. Nat. Photonics https://doi.org/10.1038/s41566-025-01639-8 (2025).
Chanana, A. et al. Ultra-low loss quantum photonic circuits integrated with single quantum emitters. Nat. Commun. 13 , 7693 (2022)..
Uppu, R. et al. On-chip deterministic operation of quantum dots in dual-mode waveguides for a plug-and-play single-photon source. Nat. Commun. 11 , 3782 (2020)..
Uppu, R. et al. Scalable integrated single-photon source. Sci. Adv. 6 , eabc8268 (2020)..
Schnauber, P. et al. Indistinguishable photons from deterministically integrated single quantum dots in heterogeneous GaAs/Si 3 N 4 quantum photonic circuits. Nano Lett. 19 , 7164–7172 (2019)..
Bogaerts, W. et al. Nanophotonic waveguides in silicon-on-insulator fabricated with CMOS technology. J. Lightwave Technol. 23 , 401–412 (2005)..
Kuruma, K. et al. Surface-passivated high-Q GaAs photonic crystal nanocavity with quantum dots. APL Photonics 5 , 046106 (2020)..
Wang, C. F. et al. Optical properties of single InAs quantum dots in close proximity to surfaces. Appl. Phys. Lett. 85 , 3423–3425 (2004)..
Manna, S. et al. Surface passivation and oxide encapsulation to improve optical properties of a single GaAs quantum dot close to the surface. Appl. Surf. Sci. 532 , 147360 (2020)..
Cao, X. et al. Single photon emission from ODT passivated near-surface GaAs quan-tum dots. Appl. Phys. Lett. 118 , 221107 (2021)..
Chellu, A. et al. GaAs surface passivation for InAs/GaAs quantum dot based nano-photonic devices. Nanotechnology 32 , 130001 (2021)..
Liu, J. et al. Single self-assembled InAs/GaAs quantum dots in photonic nanostructures: the role of nanofabrication. Phys. Rev. Appl. 9 , 064019 (2018)..
Wang, H. et al. Boson sampling with 20 input photons and a 60-mode interferometer in a 10 14 -dimensional Hilbert space. Phys. Rev. Lett. 123 , 250503 (2019)..
Schimpf, C. et al. Quantum cryptography with highly entangled photons from semiconductor quantum dots. Sci. Adv. 7 , eabe8905 (2021)..
Müller, M. et al. Quantum-dot single-photon sources for entanglement enhanced interferometry. Phys. Rev. Lett. 118 , 257402 (2017)..
Schimpf, C. et al. Entanglement-based quantum key distribution with a blinking-free quantum dot operated at a temperature up to 20 K. Adv. Photonics 3 , 065001 (2021)..
Reindl, M. et al. All-photonic quantum teleportation using on-demand solid-state quantum emitters. Sci. Adv. 4 , eaau1255 (2018)..
Ding, X. et al. On-demand single photons with high extraction efficiency and near-unity indistinguishability from a resonantly driven quantum dot in a micropillar. Phys. Rev. Lett. 116 , 020401 (2016)..
Kuhlmann, A. V. et al. A dark-field microscope for background-free detection of resonance fluorescence from single semiconductor quantum dots operating in a set-and-forget mode. Rev. Sci. Instrum. 84 , 073905 (2013)..
Cortes-Mestizo, I. E. et al. in Electromagnetic Materials and Devices (ed. Han, M.-G.) Ch. 15 (IntechOpen, 2020).
Heyn, C. et al. Shape-dependent stark shift and emission-line broadening of quantum dots and rings. J. Phys. Chem. C. 124 , 19809–19816 (2020)..
Wang, J. et al. Raman scattering characterization of the crystalline qualities of ZnSe films grown on S-passivated GaAs(100) substrates. Appl. Phys. Lett. 67 , 2043–2045 (1995)..
Dorsten, J. F., Maslar, J. E. & Bohn, P. W. Near-surface electronic structure in GaAs (100) modified with self-assembled monolayers of octadecylthiol. Appl. Phys. Lett. 66 , 1755–1757 (1995)..
Yen, C. F., Lee, M. K. & Lee, J. C. Electrical characteristics of Al 2 O 3 /TiO 2 /Al 2 O 3 prepared by atomic layer deposition on (NH 4 ) 2 S-treated GaAs. Solid State Electron. 92 , 1–4 (2014)..
Luo, X. et al. Temporal and thermal stability of Al 2 O 3 -passivated phosphorene MOSFETs. IEEE Electron Device Lett. 35 , 1314–1316 (2014)..
Xuan, Y., Lin, H. C. & Ye, P. D. Simplified surface preparation for GaAs passivation using atomic layer-deposited high-Κ dielectrics. IEEE Trans. Electron Devices 54 , 1811–1817 (2007)..
Zhou, L. et al. Property improvement of GaAs surface by 1-octadecanethiol passivation. Crystals 9 , 130 (2019)..
Forouzanfar, F., Reynolds, A. C. & Li, G. M. Optimization of the well locations and completions for vertical and horizontal wells using a derivative-free optimization algorithm. J. Pet. Sci. Eng. 86-87 , 272–288 (2012)..
Powell, M. J. D. The BOBYQA algorithm for bound constrained optimization without derivatives. (Department of Applied Mathematics and Theoretical Physics, 2009).
He, Y. M. et al. Deterministic implementationof a bright, on-demand single-photon source with near-unity indistinguishability via quantum dot imaging. Optica 4 , 802–808 (2017)..
Khattak, S. A. et al. Exciton confinement in strain-engineered metamorphic InAs/In x Ga 1-x As quantum dots. Phys. Rev. B 96 , 195301 (2017)..
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