Operando ZnO recrystallization for efficient quantum-dot light-emitting diodes

Song Wang; Shihao Liu; Ting Wang; Jialin Bai; Jingyu Peng; Hanzhuang Zhang; Wenfa Xie; Wenyu Ji

doi:10.1038/s41377-025-01867-1

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Operando ZnO recrystallization for efficient quantum-dot light-emitting diodes

Original Articles

- Operando ZnO recrystallization for efficient quantum-dot light-emitting diodes
- Light: Science & Applications Vol. 14, Issue 7, Pages: 2048-2057(2025)
- Affiliations：
  
  1.Key Lab of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, China
  2.State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
  3.Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Changchun 130103, China
- Author bio：
  
  Hanzhuang Zhang (zhanghz@jlu.edu.cn)
  Wenfa Xie (xiewf@jlu.edu.cn)
  Wenyu Ji (jiwy@jlu.edu.cn)
- Funds：
- DOI：10.1038/s41377-025-01867-1
  CLC：
- Received：17 January 2025，
  
  Revised：11 April 2025，
  
  Accepted：14 April 2025，
  
  Published Online：15 May 2025，
  
  Published：31 July 2025
- Accepted：
Scan QR Code
Wang, S. et al. Operando ZnO recrystallization for efficient quantum-dot light-emitting diodes. Light: Science & Applications, 14, 2048-2057 (2025).
DOI：

Wang, S. et al. Operando ZnO recrystallization for efficient quantum-dot light-emitting diodes. Light: Science & Applications, 14, 2048-2057 (2025). DOI： 10.1038/s41377-025-01867-1.

摘要

Abstract

ZnO nanoparticles (NPs) play a crucial role in advancing quantum-dot light-emitting diodes (QLEDs) because of their excellent electron transport properties. While the conductivity of ZnO is determined by both the density and mobility of charge carriers

a previously overlooked problem is that excessive carrier density in ZnO can lead to nonradiative Auger recombination at the quantum-dot/ZnO interface. An ideal electron transport layer should possess both high mobility and low carrier density. Here

we achieve such transport properties in ZnO NP films through operando recrystallization

a process triggered by the diffusion of Al ions from the cathode under acidic conditions. This diffusion induces the coalescence of neighboring ZnO NPs

forming defect-passivated

long-range ZnO crystals. When used as the electron transport layer in QLEDs

recrystallized ZnO NPs enhance the external quantum efficiency from 17.2% to 33.7% compared with devices with conventional ZnO electron transport layers. These findings offer valuable insights into the development of charge transport materials for high-performance optoelectronic devices.

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references

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