Phase-pure ferroelectric quantum wells with tunable photoluminescence for multi-state optoelectronic applications

Rui Sun; Yuping Jia; Bo Lai; Zhiming Shi; Mingrui Liu; Weili Yu; Ke Jiang; Shanli Zhang; Shunpeng Lv; Yang Chen; Xiaojuan Sun; Dabing Li

doi:10.1038/s41377-025-01874-2

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Phase-pure ferroelectric quantum wells with tunable photoluminescence for multi-state optoelectronic applications

Original Articles

- Phase-pure ferroelectric quantum wells with tunable photoluminescence for multi-state optoelectronic applications
- Light: Science & Applications Vol. 14, Issue 9, Pages: 2422-2432(2025)
- Affiliations：
  
  1.Key Laboratory of Luminescence Science and Technology, Chinese Academy of Sciences & State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, China
  2.University of Chinese Academy of Sciences, Beijing, China
- Author bio：
  
  Xiaojuan Sun (sunxj@ciomp.ac.cn)
  Dabing Li (lidb@ciomp.ac.cn)
- Funds：
- DOI：10.1038/s41377-025-01874-2
  CLC：
- Received：17 December 2024，
  
  Revised：2025-04-14，
  
  Accepted：23 April 2025，
  
  Published Online：30 June 2025，
  
  Published：30 September 2025
- Accepted：
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Sun, R. et al. Phase-pure ferroelectric quantum wells with tunable photoluminescence for multi-state optoelectronic applications. Light: Science & Applications, 14, 2422-2432 (2025).
DOI：

Sun, R. et al. Phase-pure ferroelectric quantum wells with tunable photoluminescence for multi-state optoelectronic applications. Light: Science & Applications, 14, 2422-2432 (2025). DOI： 10.1038/s41377-025-01874-2.

摘要

Abstract

Quasi-two-dimensional (quasi-2D) metal halide perovskite (MHP) ferroelectrics

characterized by spontaneous polarization and semiconducting properties

hold promise for functional photoferroelectrics in applications such as optical storage and in-memory computing. However

typical quasi-2D perovskite films contain multiple quantum wells with random width distribution

which degrade optoelectronic properties and spontaneous polarization. Here

we introduce phase-pure quantum wells with uniform well width by incorporating the inorganic salt MnBr

which effectively controls crystallization kinetics and restricts the nucleation of high n-phases

producing high-quality films. The resulting (BA)

CsPb

(BA = C

) film demonstrates ferroelectric hysteresis behavior

clear in-plane ferroelectric domain switching

and a high photoluminescence quantum efficiency (PLQE) of 88.7%. Significantly

we observed a nonvolatile

reversible in situ photoluminescence (PL) modulation of Mn

in this ferroelectric MHP film under an applied electric field

attributed to lattice distortion from ferroelectric polarization orientation. These findings enabled the development of a simple system comprising gallium nitride (GaN) light emitting diodes (LEDs) and ferroelectric films to implement multi-state signal encoding and a logic AND gate. This work advances the fabrication of efficient ferroelectric MHP films and highlights their potential for advanced optoelectr

onic applications.

关键词

Keywords

references

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